AT6019M SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: PACKAGE STYLE 15 The AT6019M is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship Closley Approximates Square Law (n = 0.5). MAXIMUM RATINGS IC 100 mA VCE 70 V PDISS 250 mW @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +150 C O O O O O NONE CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS MINIMUM VB IR = 10 µA CT VR = 4.0 V f = 1.0 MHz 31.35 ∆ CT CT= 0 V / CT = 60 V f = 1.0 MHz 7.4 ∆ CT CT = 8.0 V / CT = 60 V f = 1.0 MHz 2.50 Q VR = 4.0 V f = 50 MHz 800 TC VR = 4.0 V TYPICAL MAXIMUM UNITS V 70 33.0 34.65 pF RATIO 2.60 RATIO 300 Ppm/ C O A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.