HFT150-50 HF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The HFT150-50 is Designed for General Purpose Class B Power Amplifier Applications Up to 100 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: S FULL R D Ø.125 NOM. C • PG = 20 dB Typ. at 150 W/30 MHz • η D = 50% Typical at 150 W/30 MHz • Omnigold™ Metalization B G E S D G H F I J MAXIMUM RATINGS ID 16 A VDSS 125 V VGS ± 30 V PDISS 300 W @ TC = 25 OC DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 TJ -65 C to +200 C O O T STG -65 C to +150 C θ JC 0.6 OC/W CHARACTERISTICS SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 .125 / 3.18 F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 .280 / 7.11 K L ORDER CODE: ASI10617 NONE TC = 25 OC TEST CONDITIONS ID = 50 mA VDSS = 50 V VGS = 20 V VDS = 10 V VDS = 10 V C E O MAXIMUM .125 / 3.18 B O K MINIMUM TYPICAL MAXIMUM VGS = 0 V VGS = 0 V VDS = 0 V ID = 100 mA ID = 5.0 A 125 VDS = 50 V Gps ηD ψ VDD = 50 V IDQ = 250 mA POUT = 150W (PEP) FO = 30 & 30.001 MHz VSWR 30:1 @ all phase angles V mA µA V S 5.0 1.0 5.0 1.0 3.5 Ciss Coss Crss VGS = 0 V UNITS f = 1.0 MHz 16 45 300 150 30 pF 20 50 dB % NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1