ASI HFT150-50

HFT150-50
HF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The HFT150-50 is Designed for
General Purpose Class B Power
Amplifier Applications Up to 100 MHz.
PACKAGE STYLE .500 4L FLG
.112x45°
L
A
FEATURES:
S
FULL R
D
Ø.125 NOM.
C
• PG = 20 dB Typ. at 150 W/30 MHz
• η D = 50% Typical at 150 W/30 MHz
• Omnigold™ Metalization
B
G
E
S
D
G
H
F
I J
MAXIMUM RATINGS
ID
16 A
VDSS
125 V
VGS
± 30 V
PDISS
300 W @ TC = 25 OC
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
TJ
-65 C to +200 C
O
O
T STG
-65 C to +150 C
θ JC
0.6 OC/W
CHARACTERISTICS
SYMBOL
V(BR)DSS
IDSS
IGSS
VGS(th)
gfs
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
.980 / 24.89
1.050 / 26.67
.280 / 7.11
K
L
ORDER CODE: ASI10617
NONE
TC = 25 OC
TEST CONDITIONS
ID = 50 mA
VDSS = 50 V
VGS = 20 V
VDS = 10 V
VDS = 10 V
C
E
O
MAXIMUM
.125 / 3.18
B
O
K
MINIMUM TYPICAL MAXIMUM
VGS = 0 V
VGS = 0 V
VDS = 0 V
ID = 100 mA
ID = 5.0 A
125
VDS = 50 V
Gps
ηD
ψ
VDD = 50 V IDQ = 250 mA
POUT = 150W (PEP)
FO = 30 & 30.001 MHz
VSWR 30:1 @ all phase angles
V
mA
µA
V
S
5.0
1.0
5.0
1.0
3.5
Ciss
Coss
Crss
VGS = 0 V
UNITS
f = 1.0 MHz
16
45
300
150
30
pF
20
50
dB
%
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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