REF3212, REF3220 REF3225, REF3230 REF3233, REF3240 SBVS058B −JUNE 2005 − REVISED FEBRUARY 2006 4ppm/°C, 100µA, SOT23-6 SERIES VOLTAGE REFERENCE FEATURES D EXCELLENT SPECIFIED DRIFT PERFORMANCE: 7ppm/°C (max) at 0°C to +125°C 20ppm/°C (max) at −40°C to +125°C MICROSIZE PACKAGE: SOT23-6 HIGH OUTPUT CURRENT: +10mA HIGH ACCURACY: 0.01% LOW QUIESCENT CURRENT: 100µA D D D D D LOW DROPOUT: 5mV APPLICATIONS D D D D PORTABLE EQUIPMENT DESCRIPTION The REF32xx is a very low drift, micropower, low-dropout, precision voltage reference family available in the tiny SOT23-6 package. The small size and low power consumption (120µA max) of the REF32xx make it ideal for portable and battery-powered applications. This reference is stable with any capacitive load. The REF32xx can be operated from a supply as low as 5mV above the output voltage, under no load conditions. All models are specified for the wide temperature range of −40°C to +125°C. AVAILABLE OUTPUT VOLTAGES DATA ACQUISITION SYSTEMS MEDICAL EQUIPMENT TEST EQUIPMENT GND_F 1 GND_S 2 ENABLE 3 REF3212 REF3220 REF3225 REF3230 REF3233 REF3240 6 OUT_F 5 OUT_S 4 IN PRODUCT VOLTAGE REF3212 1.25V REF3220 2.048V REF3225 2.5V REF3230 3.0V REF3233 3.3V REF3240 4.096V Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. Copyright 2005−2006, Texas Instruments Incorporated ! ! www.ti.com "#$%&%' "#$%%( "#$%%)' "#$%$( "#$%$$' "#$%*( www.ti.com SBVS058B −JUNE 2005 − REVISED FEBRUARY 2006 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ABSOLUTE MAXIMUM RATINGS(1) Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.5V Output Short-Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55°C to +135°C ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to +150°C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C ESD Rating Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4kV Charged Device Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1kV Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. PACKAGE/ORDERING INFORMATION(1) PRODUCT OUTPUT VOLTAGE PACKAGE-LEAD PACKAGE DESIGNATOR PACKAGE MARKING REF3212 1.25V SOT23-6 DBV R32A REF3220 2.048V SOT23-6 DBV R32B REF3225 2.5V SOT23-6 DBV R32C REF3230 3.0V SOT23-6 DBV R32D REF3233 3.30V SOT23-6 DBV R32E REF3240 4.096V SOT23-6 DBV R32F (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. PIN CONFIGURATION Top View SOT23 1 GND_S 2 ENABLE 3 R32x GND_F 6 OUT_F 5 OUT_S 4 IN NOTE: The location of pin 1 on the REF32xx is determined by orienting the package marking as shown in the diagram above. 2 "#$%&%' "#$%%( "#$%%)' "#$%$( "#$%$$' "#$%*( www.ti.com SBVS058B −JUNE 2005 − REVISED FEBRUARY 2006 ELECTRICAL CHARACTERISTICS Boldface limits apply over the listed temperature range. At TA = +25°C, ILOAD = 0mA, and VIN = 5V, unless otherwise noted. REF32xx PARAMETER CONDITIONS MIN TYP MAX UNIT 1.2475 1.25 1.2525 V −0.2 0.01 0.2 % REF3212 (1.25V) OUTPUT VOLTAGE, VOUT Initial Accuracy NOISE Output Voltage Noise f = 0.1Hz to 10Hz 17 µVPP Voltage Noise f = 10Hz to 10kHz 24 µVRMS REF3220 (2.048V) OUTPUT VOLTAGE, VOUT 2.044 2.048 2.052 V Initial Accuracy −0.2 0.01 0.2 % NOISE Output Voltage Noise f = 0.1Hz to 10Hz 27 µVPP Voltage Noise f = 10Hz to 10kHz 39 µVRMS REF3225 (2.5V) OUTPUT VOLTAGE, VOUT 2.495 2.50 2.505 V Initial Accuracy −0.2 0.01 0.2 % NOISE Output Voltage Noise f = 0.1Hz to 10Hz 33 µVPP Voltage Noise f = 10Hz to 10kHz 48 µVRMS REF3230 (3V) OUTPUT VOLTAGE, VOUT 2.994 3 3.006 V Initial Accuracy −0.2 0.01 0.2 % NOISE Output Voltage Noise f = 0.1Hz to 10Hz 39 µVPP Voltage Noise f = 10Hz to 10kHz 57 µVRMS REF3233 (3.3V) OUTPUT VOLTAGE, VOUT 3.293 3.3 3.307 V Initial Accuracy −0.2 0.01 0.2 % NOISE Output Voltage Noise f = 0.1Hz to 10Hz 43 µVPP Voltage Noise f = 10Hz to 10kHz 63 µVRMS REF3240 (4.096V) OUTPUT VOLTAGE, VOUT 4.088 4.096 4.104 V Initial Accuracy −0.2 0.01 0.2 % NOISE Output Voltage Noise f = 0.1Hz to 10Hz 53 µVPP Voltage Noise f = 10Hz to 10kHz 78 µVRMS 3 "#$%&%' "#$%%( "#$%%)' "#$%$( "#$%$$' "#$%*( www.ti.com SBVS058B −JUNE 2005 − REVISED FEBRUARY 2006 ELECTRICAL CHARACTERISTICS (continued) Boldface limits apply over the listed temperature range. At TA = +25°C, ILOAD = 0mA, and VIN = 5V, unless otherwise noted. REF32xx PARAMETER CONDITIONS MIN TYP MAX UNIT REF3212 / REF3220 / REF3225 / REF3230 / REF3233 / REF3240 OUTPUT VOLTAGE TEMP DRIFT dVOUT/dT 0°C ≤ TA ≤ +125°C 4 7 ppm/°C −40°C ≤ TA ≤ +125°C 10.5 20 ppm/°C 15 +65 ppm/V LONG-TERM STABILITY 0 to 1000h LINE REGULATION LOAD REGULATION Sinking 0mA < ILOAD < 10mA, VIN = VOUT + 250mV(1) −10mA < ILOAD < 0mA, VIN = VOUT + 100mV(1) −40 3 40 µV/mA −60 20 60 µV/mA dT First cycle 100 Additional cycles 25 DROPOUT VOLTAGE(1) OUTPUT CURRENT SHORT-CIRCUIT CURRENT ppm −65 dVOUT/dILOAD Sourcing THERMAL HYSTERESIS(2) 55 VOUT + 0.05(1) ≤ VIN ≤ 5.5V VIN −VOUT ILOAD 0°C ≤ TA ≤ +125°C VIN = VOUT + 250mV(1) 5 −10 ppm ppm 50 mV 10 mA ISC Sourcing 50 mA Sinking 40 mA 60 µs TURN-ON SETTLING TIME to 0.1% at VIN = 5V with CL = 0 ENABLE/SHUTDOWN VL Reference in Shutdown mode 0 0.7 V VH Reference is active 0.75 × VIN VIN V POWER SUPPLY IL = 0 Voltage VIN Current IQ Over-temperature Shutdown IS VOUT + 0.05(1) 5.5 V ENABLE > 0.75 x VIN 100 120 µA 0°C ≤ TA ≤ +125°C 115 135 mA ENABLE < 0.7V 0.1 1 µA TEMPERATURE RANGE Specified −40 +125 °C Operating −55 +135 °C Storage −65 +150 Thermal resistance, SOT23-6 θJA (1) The minimum supply voltage for the REF3212 is 1.8V. (2) Thermal hysteresis procedure is explained in more detail in the Applications Information section. (3) Load regulation is using force and sense lines; see the Load Regulation section for more information. 4 200 °C °C/W "#$%&%' "#$%%( "#$%%)' "#$%$( "#$%$$' "#$%*( www.ti.com SBVS058B −JUNE 2005 − REVISED FEBRUARY 2006 TYPICAL CHARACTERISTICS At TA = +25°C, ILOAD = 0mA, VIN = +5V power supply, REF3225 is used for typical characteristics, unless otherwise noted. TEMPERATURE DRIFT (−40_ C to +125_ C) Population Population TEMPERATURE DRIFT (0_C to +125_C) 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Drift (ppm/_C) Drift (ppm/_C) OUTPUT VOLTAGE ACCURACY vs TEMPERATURE DROPOUT VOLTAGE vs LOAD CURRENT 0.12 160 0.08 Dropout Voltage (mV) Output Voltage Accuracy (%) +125_C 140 0.04 0 −0.04 −0.08 −0.12 −50 +25_ C 120 100 −40_C 80 60 40 20 −25 0 0 +25 +50 +75 +100 +125 −15 −10 −5 0 5 10 15 Load Current (mA) Temperature (_C) QUIESCENT CURRENT vs TEMPERATURE POWER−SUPPLY REJECTION RATIO vs FREQUENCY 130 100 90 80 110 70 PSRR (dB) Quiescent Current (µA) 120 100 90 60 50 40 30 80 20 70 −50 −25 0 +25 +50 Temperature (_ C) +75 +100 +125 10 1 10 100 1k 10k 100k Frequency (Hz) 5 "#$%&%' "#$%%( "#$%%)' "#$%$( "#$%$$' "#$%*( www.ti.com SBVS058B −JUNE 2005 − REVISED FEBRUARY 2006 TYPICAL CHARACTERISTICS (continued) At TA = +25°C, ILOAD = 0mA, VIN = +5V power supply, REF3225 is used for typical characteristics, unless otherwise noted. OUTPUT VOLTAGE vs LOAD CURRENT 1.2525 2.505 1.2520 2.504 1.2515 2.503 Output Voltage (V) 1.2510 1.2505 +125_ C 1.2500 +25_C 1.2495 1.2490 −40_ C 1.2485 2.502 2.501 +125_ C 2.500 +25_ C 2.499 2.498 −40_ C 2.497 2.496 1.2480 2.495 1.2475 2.5 3 3.5 4 4.5 −15 5 −10 −5 0 5 Input Voltage (V) Load Current (mA) 0.1Hz TO 10Hz NOISE OUTPUT VOLTAGE INITIAL ACCURACY Output Accuracy (%) STEP RESPONSE CL = 0pF, 5V STARTUP STEP RESPONSE CL = 1µF VIN VIN 1V/div 1V/div VOUT VOUT 10µs/div 100µs/div 15 0.20 0.16 0.12 0.08 0.04 0 −0.04 −0.08 −0.12 −0.16 400ms/div 6 10 Population 2 10µV/div 1.5 −0.20 Output Voltage (V) OUTPUT VOLTAGE vs INPUT VOLTAGE (REF3212) "#$%&%' "#$%%( "#$%%)' "#$%$( "#$%$$' "#$%*( www.ti.com SBVS058B −JUNE 2005 − REVISED FEBRUARY 2006 TYPICAL CHARACTERISTICS (continued) At TA = +25°C, ILOAD = 0mA, VIN = +5V power supply, REF3225 is used for typical characteristics, unless otherwise noted. 500mV/div LINE TRANSIENT CL = 10µF VIN VIN VOUT 20mV/div 20mV/div 500mV/div LINE TRANSIENT CL = 0pF ILOAD VOUT 20µs/div 100µs/div LOAD TRANSIENT CL = 0pF, ±10mA OUTPUT PULSE LOAD TRANSIENT CL = 1µF, ±10mA OUTPUT PULSE +10mA ILOAD +10mA +10mA +10mA −10mA −10mA 50mV/div 200mV/div VOUT ILOAD VOUT 40µs/div 40µs/div LOAD TRANSIENT CL = 0pF, ±1mA OUTPUT PULSE LOAD TRANSIENT CL = 1µF, ±1mA OUTPUT PULSE ILOAD +1mA +1mA −1mA +1mA +1mA −1mA 20mV/div 100mV/div VOUT 40µs/div VOUT 40µs/div 7 "#$%&%' "#$%%( "#$%%)' "#$%$( "#$%$$' "#$%*( www.ti.com SBVS058B −JUNE 2005 − REVISED FEBRUARY 2006 TYPICAL CHARACTERISTICS (continued) At TA = +25°C, ILOAD = 0mA, VIN = +5V power supply, REF3225 is used for typical characteristics, unless otherwise noted. LONG−TERM STABILITY (32 Units) Output Voltage Stability (ppm) 200 150 100 50 0 −50 −100 −150 −200 0 200 400 600 800 1000 1200 Time (Hours) APPLICATION INFORMATION The REF32xx is a family of CMOS, precision bandgap voltage references. Figure 1 shows the basic bandgap topology. Transistors Q1 and Q2 are biased so that the current density of Q1 is greater than that of Q2. The difference of the two base-emitter voltages (Vbe1 – Vbe2) has a positive temperature coefficient and is forced across resistor R1. This voltage is amplified and added to the base-emitter voltage of Q2, which has a negative temperature coefficient. The resulting output voltage is virtually independent of temperature. The REF32xx does not require a load capacitor and is stable with any capacitive load. Figure 2 shows typical connections required for operation of the REF32xx. A supply bypass capacitor of 0.47µF is recommended. 1 0.47µF +5V VBANDGAP R1 Q1 I + Vbe1 − + Vbe2 − N Q2 Figure 1. Simplified Schematic of Bandgap Reference 8 2 3 R32C THEORY OF OPERATION 6 +2.5V 5 4 Figure 2. Typical Operating Connections for the REF3225 SUPPLY VOLTAGE The REF32xx family of references features an extremely low dropout voltage. With the exception of the REF3212, which has a minimum supply requirement of 1.8V, these references can be operated with a supply of only 5mV above the output voltage in an unloaded condition. For loaded conditions, a typical dropout voltage versus load is shown in the Typical Characteristic curves. "#$%&%' "#$%%( "#$%%)' "#$%$( "#$%$$' "#$%*( www.ti.com SBVS058B −JUNE 2005 − REVISED FEBRUARY 2006 The REF32xx also features a low quiescent current of 100µA, with a maximum quiescent current over temperature of just 135µA. The quiescent current typically changes less than 2µA over the entire supply range, as shown in Figure 3. THERMAL HYSTERESIS Thermal hysteresis for the REF32xx is defined as the change in output voltage after operating the device at +25_C, cycling the device through the specified temperature range, and returning to +25_C. It can be expressed as: V HYST + 110 ǒ ŤV * VPOSTŤ VNOM PRE Ǔ 106(ppm) (1) Quiescent Current (µA) 108 Where: 106 104 VHYST = thermal hysteresis (in units of ppm). 102 VNOM = the specified output voltage. 100 VPRE = output voltage measured at +25_C pretemperature cycling. 98 96 94 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VPOST = output voltage measured after the device has been cycled through the specified temperature range of –40_C to +125_C and returned to +25_C. Power Supply (V) TEMPERATURE DRIFT Figure 3. Supply Current vs Supply Voltage Supply voltages below the specified levels can cause the REF32xx to momentarily draw currents greater than the typical quiescent current. This momentary current draw can be prevented by using a power supply with a fast rising edge and low output impedance. SHUTDOWN The REF32xx can be placed in a low-power mode by pulling the ENABLE/SHUTDOWN pin low. When in Shutdown mode, the output of the REF32xx becomes a resistive load to ground. The value of the load depends on the model, and ranges from approximately 100kΩ to 400kΩ. The REF32xx is designed to exhibit minimal drift error, which is defined as the change in output voltage over varying temperature. The drift is calculated using the box method, as described by the following equation: Drift + ǒV V OUT Ǔ * V OUTMIN Temp Range OUTMAX 106(ppm) (2) The REF32xx features a typical drift coefficient of 4ppm/°C from 0_C to +125_C—the primary temperature range for many applications. For the extended industrial temperature range of –40_C to +125_C, the REF32xx family drift increases to a typical value of 10.5ppm/°C. NOISE PERFORMANCE Typical 0.1Hz to 10Hz voltage noise can be seen in the Typical Characteristic curve, 0.1 to 10Hz Voltage Noise. The noise voltage of the REF32xx increases with output voltage and operating temperature. Additional filtering can be used to improve output noise levels, although care should be taken to ensure the output impedance does not degrade AC performance. 9 "#$%&%' "#$%%( "#$%%)' "#$%$( "#$%$$' "#$%*( www.ti.com SBVS058B −JUNE 2005 − REVISED FEBRUARY 2006 LONG-TERM STABILITY APPLICATION CIRCUITS Long-term stability refers to the change of the output voltage of a reference over a period of months or years. This effect lessens as time progresses, as is shown by the long-term stability Typical Characteristic curves. The typical drift value for the REF32xx is 55ppm from 0 to 1000 hours. This parameter is characterized by measuring 30 units at regular intervals for a period of 1000 hours. LOAD REGULATION Load regulation is defined as the change in output voltage as a result of changes in load current. The load regulation of the REF32xx is measured using force and sense contacts, as shown in Figure 4. The force and sense lines can be used to effectively eliminate the impact of contact and trace resistance, resulting in accurate voltage at the load. By connecting the force and sense lines at the load, the REF32xx compensates for the contact and trace resistances because it measures and adjusts the voltage actually delivered at the load. NEGATIVE REFERENCE VOLTAGE For applications requiring a negative and positive reference voltage, the REF32xx and OPA735 can be used to provide a dual-supply reference from a ±5V supply. Figure 5 shows the REF3225 used to provide a ±2.5V supply reference voltage. The low drift performance of the REF32xx complements the low offset voltage and zero drift of the OPA735 to provide an accurate solution for split-supply applications. Care must be taken to match the temperature coefficients of R1 and R2. +5V 3 4 5 REF3225 2 1 6 +2.5V R1 10kΩ R2 10kΩ +5V Contact and Trace Resistance OPA735 GND_F GND_S SHDN 1 2 3 6 REF32xx 5 4 −2.5V −5V OUT_F NOTE: Bypass capacitor is not shown. OUT_S IN RLOAD Figure 5. REF3225 Combined with OPA735 to Create Positive and Negative Reference Voltages 0.47µF +5V DATA ACQUISITION Figure 4. Accurate Load Regulation of REF32xx 10 Data acquisition systems often require stable voltage references to maintain accuracy. The REF32xx family features stability and a wide range of voltages suitable for most microcontrollers and data converters. Figure 6, Figure 7, and Figure 8 show basic data acquisition systems. "#$%&%' "#$%%( "#$%%)' "#$%$( "#$%$$' "#$%*( www.ti.com SBVS058B −JUNE 2005 − REVISED FEBRUARY 2006 5 3.3V 3 REF3233 6 5Ω 2 VREF + VCC + 0.1µF VIN +In GND 1µF to 10µF 1µF to 10µF Microcontroller CS −In V+ 0.47µF 1 GND VS ADS7822 4 DOUT DCLOCK Figure 6. Basic Data Acquisition System 1 2.5V Supply 2.5V 3 5Ω VIN 4 + 5 REF3212 2 6 VOUT = 1.25V + 0.1µF 1µF to 10µF GND 0V to 1.25V 1µF to 10µF VCC VREF 1 VS ADS8324 +In CS −In DOUT Microcontroller DCLOCK GND Figure 7. Basic Data Acquisition System 2 +5V 2 1 REF3240 5 3 4 6 VOUT = 4.096V 1kΩ 0.1µF 1µF 10Ω 22µF +5V 1kΩ VIN VREF 10Ω ADS8381 THS4031 6800pF 0.22µF 500Ω −5V Figure 8. REF3240 Provides an Accurate Reference for Driving the ADS8381 11 PACKAGE OPTION ADDENDUM www.ti.com 5-Apr-2007 PACKAGING INFORMATION (1) Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty REF3212AIDBVR ACTIVE SOT-23 DBV 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3212AIDBVRG4 ACTIVE SOT-23 DBV 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3212AIDBVT ACTIVE SOT-23 DBV 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3212AIDBVTG4 ACTIVE SOT-23 DBV 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3220AIDBVR ACTIVE SOT-23 DBV 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3220AIDBVRG4 ACTIVE SOT-23 DBV 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3220AIDBVT ACTIVE SOT-23 DBV 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3220AIDBVTG4 ACTIVE SOT-23 DBV 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3225AIDBVR ACTIVE SOT-23 DBV 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3225AIDBVRG4 ACTIVE SOT-23 DBV 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3225AIDBVT ACTIVE SOT-23 DBV 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3225AIDBVTG4 ACTIVE SOT-23 DBV 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3230AIDBVR ACTIVE SOT-23 DBV 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3230AIDBVRG4 ACTIVE SOT-23 DBV 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3230AIDBVT ACTIVE SOT-23 DBV 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3230AIDBVTG4 ACTIVE SOT-23 DBV 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3233AIDBVR ACTIVE SOT-23 DBV 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3233AIDBVRG4 ACTIVE SOT-23 DBV 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3233AIDBVT ACTIVE SOT-23 DBV 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3233AIDBVTG4 ACTIVE SOT-23 DBV 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3240AIDBVR ACTIVE SOT-23 DBV 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3240AIDBVRG4 ACTIVE SOT-23 DBV 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3240AIDBVT ACTIVE SOT-23 DBV 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR REF3240AIDBVTG4 ACTIVE SOT-23 DBV 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR The marketing status values are defined as follows: Addendum-Page 1 Lead/Ball Finish MSL Peak Temp (3) PACKAGE OPTION ADDENDUM www.ti.com 5-Apr-2007 ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. 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