Preliminary Datasheet 150mA RF ULDO REGULATOR AP2201 General Description Features The AP2201 is a 150mA output current fixed voltage regulator designed to provide very low noise (45µVrms at 80Hz-100KHz), ultra low dropout voltage (typically 165mV at 150mA), very low quiescent current (1µA maximum) and excellent power supply ripple rejection (PSRR 75dB at 100Hz) in battery powered applications, such as handsets and PDAs and in noise sensitive applications, such as RF electronics. · · · Up to 150mA Regulator Output Low Quiescent Current Low Dropout Voltage: VD=165mV at 150mA · · · High Precision Output Voltage: ±1% Output Noise: 45µVrms at 80Hz-100KHz Good Ripple Rejection Ability: 75dB at 100Hz and IOUT=100µA · · · · · · · Tight Load and Line Regulation Low Temperature Coefficient Over Current Protection Thermal Protection Reverse-battery Protection Zero Off-mode Current Logic-controlled Enable The AP2201 also features individual logic compatible enable/shutdown control inputs, a low power shutdown mode for extended battery life, over current protection, over temperature protection, as well as reversed-battery protection. The output capacitor of 1.0µF minimum and 2.2µF minimum near its pin are recommended when CBYP is not used and when CBYP is 470pF respectively. The output capacitor should have 5Ω or less ESR, tantalum or aluminium electrolytic capacitors are adequate. Bypass capacitor is connected to the internal voltage reference to quiet noise. Its recommended value is from 470pF to 1nF. If output noise is not a major concern and rapid turn-on is necessary, omit CBYP and leave BYP open. Applications · · · · · · · The AP2201 has 2.6V, 2.8V and 3.0V versions now. Cellular Phones Cordless Phones Digital Still Cameras Wireless Communicators PDAs / Palmtops PC Mother Board Consumer Electronics The AP2201 is available in space saving 5-pin SOT23-5 package. VIN=3.8V VIN AP2201-2.8 VIN VOUT VOUT=2.8V EN CIN 1.0µF GND + BYP CBYP VOUT COUT 2.2µF tantalum 470pF SOT-23-5 Figure 2. Package Type of AP2201 Figure 1. Typical Application of AP2201 BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 0 1 Preliminary Datasheet 150mA RF ULDO REGULATOR AP2201 Pin Configuration K Package (SOT-23-5) EN 1 GND 2 BYP 3 5 VIN 4 VOUT Figure 3. Pin Configuration of AP2201 (Top View) Pin Description Pin Number Pin Name Function 1 EN 2 GND Ground. 3 BYP Bypass capacitor for low noise operation. 4 VOUT Regulated output voltage. 5 VIN Logic high enable input. Input voltage. BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 0 2 Preliminary Datasheet 150mA RF ULDO REGULATOR AP2201 Functional Block Diagram VIN BYP 5 4 VOUT 3 + EN Bandgap Ref. 1 Current Limit Thermal Shutdown 2 GND Figure 4. Functional Block Diagram of AP2201 Ordering Information AP2201 E1: Lead Free Blank: Tin Lead Circuit Type TR: Tape and Reel Package 2.6: Fixed Output 2.6V 2.8: Fixed Output 2.8V 3.0: Fixed Output 3.0V K: SOT-23-5 BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 0 3 Preliminary Datasheet 150mA RF ULDO REGULATOR AP2201 Ordering Information (Continued) Package SOT-23-5 Part Number Temperature Range -40 to 125oC Marking ID Packing Type Tin Lead Lead Free Tin Lead Lead Free AP2201K-2.6TR AP2201K-2.6TRE1 K1E E1E Tape & Reel AP2201K-2.8TR AP2201K-2.8TRE1 K1G E1G Tape & Reel AP2201K-3.0TR AP2201K-3.0TRE1 K1I E1I Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Supply Input Voltage VIN 15 V Enable Input Voltage VEN 15 V PD Internally Limited W TLEAD 260 oC TSTG -65 to 150 oC 200 V Power Dissipation Lead Temperature (Soldering, 5sec) Storage Temperature ESD (Machine Model) θJA Thermal Resistance (Note 2) Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max) TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Input Voltage VIN 2.5 13.2 V Enable Input Voltage VEN 0 13.2 V TJ -40 125 oC Operating Junction Temperature BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 0 4 Preliminary Datasheet 150mA RF ULDO REGULATOR AP2201 Electrical Characteristics VIN=VOUT +1V, IOUT = 100µA, CL = 2.2µF, VEN≥ 2.0V, TJ = 25oC, Bold typeface applies over -40oC<TJ<125oC, unless otherwise specified. Parameter Symbol Output Voltage Accuracy ∆VO/VO Output Voltage Temperature Coefficient Line Regulation Load Regulation (Note 4) ∆VO /∆T VRLINE VRLOAD Conditions Min Variation from specified VOUT (Note 3) Typ Max -1 1 -2 2 1 AP2201-2.8V VIN= VOUT +1V to 13.2V 1 AP2201-3.0V VIN= VOUT +1V to 13.2V 1 AP2201-2.6V IOUT= 0.1mA to 150mA 1 AP2201-2.8V IOUT= 0.1mA to 150mA 1 AP2201-3.0V IOUT= 0.1mA to 150mA 1 3 13 4 mV 14 4 14 8 16 9 mV 18 9 18 15 IOUT=100µA % µV/oC 120 AP2201-2.6V VIN= VOUT +1V to 13.2V Unit 50 70 110 IOUT=50mA Dropout Voltage (Note 5) 150 230 VIN-VO IOUT=100mA 140 250 165 275 mV 300 IOUT=150mA 350 Quiescent Current IQ VEN ≤ 0.4V (shutdown) 0.01 VEN ≤ 0.18V (shutdown) 1 µA 5 VEN ≥ 2.0V, IOUT=0µA 180 VEN ≥ 2.0V, IOUT=100µA 182 245 265 Ground Pin Current (Note 6) 250 270 IGND VEN ≥ 2.0V, IOUT=50mA 350 µA 600 800 VEN ≥ 2.0V, IOUT=100mA 600 1000 1500 BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 0 5 Preliminary Datasheet 150mA RF ULDO REGULATOR AP2201 Electrical Characteristics (Continued) VIN=VOUT +1V, IOUT = 100µA, CL = 2.2µF, VEN≥ 2.0V, TJ = 25oC, Bold typeface applies over -40oC<TJ<125oC, unless otherwise specified. Parameter Symbol Ground Pin Current (Note 6) IGND Conditions Min VEN ≥ 2.0V, IOUT=150mA Typ Max Unit 1300 1900 µA 2500 Ripple Rejection PSRR frequency=100Hz, IOUT=100µA 75 Current Limit ILIMIT VOUT = 0V 320 260 Output Noise (Regulator B only) eno IOUT=50mA, CL=2.2µF, 470 pF from BYP to GND Enable Input Voltage Logic-Low VIL Regulator shutdown Enable Input Voltage Logic-High Enable Input Current Logic-Low Enable Input Current Logic-High dB 550 mA nV / Hz 0.4 V 0.18 VIH IIL IIH Regulator enabled VIL≤ 0.4V 2.0 V 0.01 VIL≤ 0.18V VIL≥ 2.0V VIL≥ 2.0V -1 µA -2 5 20 µA 25 Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 0 6 Preliminary Datasheet 150mA RF ULDO REGULATOR AP2201 Typical Performance Characteristics 350 2.900 2.875 Dropout Voltage (mV) 2.850 Output Voltage (V) IOUT=50mA 300 AZ2201-2.8V 2.825 2.800 2.775 2.750 250 IOUT=100mA IOUT=150mA CIN=1.0µF, CL=2.2µF, CBYP=1nF 200 150 100 50 2.725 2.700 -60 -40 -20 0 20 40 60 80 100 120 0 -60 140 -40 -20 o 20 40 60 80 100 120 140 Junction Temperature ( C) Figure 5. Output Voltage vs. Junction Temperature Figure 6. Dropout Voltage vs. Junction Temperature 5000 6 5 4000 AP2201-2.8V IOUT=50mA IOUT=100mA Ground Pin Current (µA) 4 Ground Pin Current (mA) 0 o Junction Temperature ( C) 3 2 1 0 -1 -2 3000 2000 IOUT=150mA VIN=3.8V,VEN=2.0V,CIN=1.0µF, CL=2.2µF,CBYP=1nF 1000 0 -1000 -3 -2000 -60 -4 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 -40 -20 0 20 40 60 80 100 120 140 o Junction Temperature ( C) Output Current (mA) Figure 7. Ground Pin Current vs. Output Current Figure 8. Ground Pin Current vs. Junction Temperature BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 0 7 Preliminary Datasheet 150mA RF ULDO REGULATOR AP2201 Typical Performance Characteristics (Continued) 2.0 20 1.8 16 VEN=3.0V 1.7 14 VEN=4.0V 1.6 CIN=1.0µF,CL=2.2µF,CBYP=1nF 1.5 VIN=3.8V,IOUT=5mA Enable Voltage (V) 1.9 VEN=2.0V 18 Enable Current (µA) AP2201-2.8V VEN=on VEN=1.8V AP2201-2.8V VIN=3.8V, CIN=1.0µF, CL=2.2µF, 12 IOUT=100µA, CBYP=1nF 10 8 6 VEN=off 1.4 1.3 1.2 1.1 1.0 0.9 4 0.8 2 0 -60 0.7 -40 -20 0 20 40 60 80 100 120 0.6 -60 140 -40 -20 0 20 40 60 80 100 120 140 o o Junction Temperature ( C) Junction Temperature ( C) Figure 9. Enable Current vs. Junction Temperature Figure 10. Enable Voltage vs. Junction Temperature 200 Output Current 150 100 Output Voltage Noise (µVrms) AP2201-2.8V 50 0 10 100 1000 10000 Time (µs) Bypass Capacitor (pF) Figure 11. Noise vs. Bypass Capacitor Figure 12. Load Transient (Conditions: VIN=3.8V, CBYP=680pF, VEN=2V, IOUT=5mA to 50mA, CL=2.2µF) BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 0 8 Preliminary Datasheet 150mA RF ULDO REGULATOR AP2201 Typical Performance Characteristics (Continued) AP2201-2.8V Output Voltage Output Voltage Input Voltage Enable Voltage AP2201-2.8V Time (µs) Time (µs) Figure 13. Line Transient (Conditions: VIN=3.8V to 4.8V, VEN=2V, IOUT=100µA CBYP=680pF, CL=10µF) Figure 14. VEN(on) vs. VO (Conditions: VEN=0V to 2V, VIN=3.8V, IOUT=30mA, CBYP=open, CL=2.2µF) 0 -10 AP2201-2.8V -20 PSRR (dB) -30 -40 -50 -60 -70 -80 -90 -100 100 1k 10k 100k 1M 10M Frequency (Hz) Figure 15. PSRR vs. Frequency ( Conditions: CIN =1.0µF, CL = 2.2µF, CBYP= open, VIN=3.8V, IOUT=10mA, VEN=2V) BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 0 9 Preliminary Datasheet 150mA RF ULDO REGULATOR AP2201 Application Information The output capacitor should have an ESR of about 5Ω or less. In most cases, tantalum or aluminium electrolytic capacitors are adequate. External Capacitors The AP2201 requires external capacitors for regulator stability. These capacitors must be correctly selected for good performance. Noise Bypass Capacitor Bypass capacitor is connected to the internal voltage reference. A 680pF capacitor connected from BYP to GND make this reference quiet, resulting in a significant reduction in output noise. When using CBYP, output capacitors of 2.2µF or greater are required for better stability. Input Capacitor If there is more than 10 inches of wire between the input and the AC filter or if a battery is used as the input, at least a 1µF capacitor should be placed from IN to GND. Output Capacitor It is required to prevent oscillation. 1.0µF minimum is recommended when CBYP is not used. 2.2µF minimum is recommended when CBYP is 470pF. The output capacitor may be increased without limit for large values to improve transient response. The start-up speed of the AP2201 is inversely proportional to the value of reference bypass capacitor. In some cases if output noise is not a major concern and rapid turn-on is necessary, omit CBYP and leave BYP open. BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 0 10 Preliminary Datasheet 150mA RF ULDO REGULATOR AP2201 Mechanical Dimensions SOT-23-5 Unit: mm(inch) 0.300(0.012) 0.600(0.024) 1.500(0.059) 1.700(0.067) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 2.820(0.111) 3.020(0.119) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0.400(0.016) 0° 8° 1.800(0.071) 2.000(0.079) 1.250(0.049) 1.050(0.041) 0.950(0.037) TYP 0.000(0.000) 0.100(0.004) 1.050(0.041) 1.150(0.045) BCD Semiconductor Manufacturing Limited Jun. 2005 Rev. 1. 0 11 http://www.bcdsemi.com BCD Semiconductor Corporation 3170 De La Cruz Blvd, Suite # 105 Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386 Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, PRC Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Advanced Analog Circuits (Shanghai) Corporation 8F, B Zone, 900 Yi Shan Road, Shanghai 200233, PRC Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 BCD Semiconductor (Taiwan) Company Limited 4F, 298-1 Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656-2808, Fax: +886-2-2656-2806 IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others.