BILIN RB715F

BL Galaxy Electrical
Production specification
Schottky Barrier Diode
RB715F
FEATURES
z
Extra small power mold type.
z
Low VF.
z
High reliability.
Pb
Lead-free
APPLICATIONS
z
General purpose application.
SOT-323
ORDERING INFORMATION
Type No.
Marking
Package Code
RB715F
3D
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
40
V
Diode reverse voltage
VR
40
V
Average forward current
IF
30
mA
IFS
200
mA
Power Dissipation
Pd
150
mW
Junction temperature
Tj
125
℃
Storage temperature range
Tstg
-40-+125
℃
Forward Surge Current
t=1μS
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Symbol
Test
conditions
V(BR)R
IR= 100μA
MIN
MAX
40
UNIT
V
Reverse voltage leakage current
IR
VR=10V
1
μA
Forward voltage
VF
IF=1mA
370
mV
Diode capacitance
CD
VR=1V
2.0
pF
Document number: BL/SSSKF027
Rev.A
f=1MHz
www.galaxycn.com
1
BL Galaxy Electrical
Schottky Barrier Diode
Production specification
RB715F
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSKF027
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
Schottky Barrier Diode
RB715F
PACKAGE OUTLINE
Plastic surface mounted package
SOT-323
SOT-323
Dim
Min
Max
A
1.8
2.2
B
1.15
1.35
C
1.0Typical
D
0.15
0.35
E
0.25
0.40
G
1.2
1.4
H
0.02
0.1
J
K
0.1Typical
2.1
2.3
All Dimensions in mm
PACKAGE INFORMATION
Device
Package
Shipping
RB715F
SOT-323
3000/Tape&Reel
Document number: BL/SSSKF027
Rev.A
www.galaxycn.com
3