BL GALAXY ELECTRICAL RU3YX(Z) --- RU3C(Z) VOLTAGE RANGE: 100--- 1000 V CURRENT: 1.1 - 2.0 A HIGH EFFICIENCY RECTIFIER FEATURES DO - 15B Low cost Diffused junction Low leakage Low forward voltage drop Easily cleaned with freon, alcohol, lsopropand and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case: JEDEC DO-15B, molded plastic Terminals: Axial leads,solderable per MIL-STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.024 ounces, 0.68 grams Mounting: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. RU3YX RU3 RU3A RU3B RU3C UNITS Maximum peak repetitive reverse voltage VRRM 100 400 600 800 1000 V Maximum RMS voltage VRMS 70 280 420 560 700 V Maximum DC blocking voltage VDC 100 400 600 800 1000 V IF(AV) 2.0 1.1 1.5 A IFSM 50.0 VF 0.95 Maximum average forw ard rectified current 9.5mm lead length, @TA=75 1.5 Peak forw ard surge current 10ms single half-sine-w ave superimplsed on rated load at rated DC blocking voltage A @TJ =125 Maximum instantaneous forw ard voltage @ IF=IF(AV) Maximum reverse current 20.0 1.5 2.5 10.0 @TA=25 IR @TA =100 A 300.0 400.0 50 100 Maximum reverse recovery time (Note1) trr Typical junction capacitance (Note2) CJ Typical thermal resistance (Note3) RθJL 12 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 Operating junction temperature range Storage temperature range V 50 NOTE: 1.Measured with I F=0.5A, I R=1A, I rr=0.25A ns 30 pF ／Ｗ www.galaxycn.com 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance junction to ambient. Document Number 0262045 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES RU3YX(Z)---RU3C(Z) FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. trr 10 N 1. +0.5A D.U.T. 0 PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) -0.25A OSCILLOSCOPE (NOTE1) 1 NONINDUCTIVE -1.0A 1cm SET TIME BASE FOR 10/20 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . RU3C 1.0 RU3B T J =25 Pulse W idth=300 µ S 0.1 RU3,RU3A 0.01 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT AMPERES RU3YX 10 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 50 8.3ms Single Half Sine-Wave 40 RU3YX 30 20 10 RU3,RU3A,RU3B,RU3C 0 5 1 10 50 RU3YX 1.5 RU3,RU3A,RU3C 1.0 RU3B 0.5 Single Phase Half Wave 60Hz Resistive or Inductive Load 0 25 50 75 100 125 150 AMBIENT TEMPERATURE, FIG.5--TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF PEAK FORWARD SURGE CURRENT AMPERES FIG.4 -- PEAK FORWARD SURGE CURRENT 2.0 NUMBER OF CYCLES AT 60Hz 200 100 RU3YX\RU3 60 40 RU3A\RU3B \RU3C 20 10 4 TJ=25 2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS www.galaxycn.com Document Number 0262045 BLGALAXY ELECTRICAL 2.