BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode SD107WS FEATURES Pb z Low forward voltage drop. z Lead-free Guard ring die construction for transient protection. z Ideal for low logic level applications. z Low capacitance. APPLICATIONS z Schottky barrier switching SOD-323 ORDERING INFORMATION Type No. Marking SD107WS SG MAXIMUM RATING @ Ta=25℃ Package Code SOD-323 unless otherwise specified Parameter Symbol Limits Unit Peak Repetitive reverse voltage VRRM 30 V RMS Reverse Voltage VR(RMS) 21 V Forward continuous Current IF 100 mA IFSM 750 mA Power dissipation Pd 250 mW Thermal resistance junction to ambient air RθjA 500 ℃/W Junction temperature Tj 150 ℃ Storage temperature TSTG -65~+150 ℃ Non-Repetitive Peak Forward Surge Current @tp≤10ms ELECTRICAL CHARACTERISTICS @ Ta=25℃ Parameter Symbol Min. Reverse breakdown voltage VR 30 unless otherwise specified Typ. Max. Unit Conditions V IR=100μA 300 Forward voltage VF IF=2mA 360 470 550 580 800 mV IF=15mA IF=50mA IF=100mA Reverse current IR 1.0 μA VR=25V Capacitance between terminals CT 7 pF VR=10V,f=1MHz Document number: BL/SSSKB027 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode SD107WS PACKAGE OUTLINE Plastic surface mounted package SOD-323 SOD-323 K B C A D J Min Max A 1.275 1.325 B 1.675 1.725 C H E Dim 0.9 Typical D 0.25 0.35 E 0.27 0.37 H 0.02 0.1 J K 0.1 Typical 2.6 2.7 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping SD106WS SOD-323 3000/Tape&Reel Document number: BL/SSSKB027 Rev.A www.galaxycn.com 2