BILIN TVR4N

BL GALAXY ELECTRICAL
FAST RECOVERY RECT IFIER
TVR4J---TVR4N
VOLTAGE RANGE: 600 ---1000 V
CURRENT: 1.5 A
FEATURES
DO - 15
Low cos t
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC DO-15,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces ,0.39 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
TVR4J
TVR4N
UNITS
Maximum recurrent peak reverse voltage
V RRM
600
1000
V
Maximum RMS voltage
V RMS
420
700
V
Maximum DC blocking voltage
V DC
600
1000
V
Maximum average f orw ard rectif ied current
9.5mm lead length,
@TA =75
IF(AV)
1.5
A
IFSM
50.0
A
VF
1.3
V
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous f orw ard voltage
@ 1.5 A
Maximum reverse current
at rated DC blocking voltage
@TA =25
IR
@TA =100
5.0
A
100.0
Maximum reverse recovery time (Note1)
t rr
1000
ns
Typical junction capacitance
(Note2)
CJ
20
pF
Typical thermal resistance
(Note3)
Rθ JA
40
TJ
-55----+150
TSTG
-55----+150
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
/W
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Therm al resistance f rom junction to am bient.
Document Number 0261070
BLGALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
TVR4J - - - TVR4N
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
trr
10
N.1.
50
N.1.
+0.5A
D.U.T.
( - )
(+)
50VDC
(APPROX)
(-)
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
1
N.1.
0
-0.25A
( + )
-1.0A
NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
FIG.3 --PEAK FORWARD SURGE CURRENT
1.50
1.25
1.00
.75
.50
Single Phase
Half Wave 60H Z
Resistive or
Inductive Load
0
25
50
75
100
125
150
175
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
FIG.2 --FORWARD DERATING CURVE
.25
50
TJ=125℃
8.3ms Single Half
Sine-Wave
40
30
20
10
0
0
20
AMBIENT TEMPERATURE,
40
60
80
100
NUMBER OF CYCLES AT 60 Hz
FIG.4--TYPICAL FORWARD CHARACTERISTIC
FIG.5-- TYPICAL JUNCTION CAPACITANCE
100
100
10
60
TJ =25
Pulse Width=300µS
4
2
1.0
0.4
0.2
0.1
0.0 6
0 .0 4
0.0 2
0.0 1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
JUNCTION CAPACITANCE,pF
INSTANTANEOUS FORWARD CURRENT
AMPERES
1cm
SET TIMEBASEFOR50/100 ns /cm
40
20
10
4
TJ=25
f=1MHz
2
1
.1
.2
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
Document Number 0261070
BLGALAXY ELECTRICAL
2.