BRIGHT BIR-BM13V4V-2

BRIGHT LED ELECTRONICS CORP.
SINCE 1981
DATA SHEET
DEVICE NUMBER:BIR-BM13V4V-2
●
SHEET
DATE
1
2
3
4
2002.11.07
1.0 1.0 1.0 1.0
2003.04.10
1.1 1.1
2004.11.13
2.0 2.0 2.0 2.0
-
CONTENTS
Initial Released
Date﹑Tsol﹑ Ee ﹑
Ie﹑FIG.3
Format Of Sheets
﹑Features
1.1
佰鴻工業股份有限公司
BRIGHT LED ELECTRONICS CORP.
台北縣板橋市和平路 19 號 3 樓
3F., No. 19, Ho Ping Road, Pan Chiao City,
Taipei, Taiwan, R. O. C.
Tel: 886-2-29591090
Fax: 886-2-29547006/29558809
www.brtled.com.
APPROVED
DRAWER
賈遠慶
肖美艷
BRIGHT LED ELECTRONICS CORP.
BIR-BM13V4V-2
SINCE 1981
END-LOOK PACKAGE
IGHT EMITTING DIODE
z
Package Dimensions:
z Features:
4.98(.196)
1. High radiant power and high radiant intensity.
2. Standard T-1 1/4(5mm)package.
7.7(.303)
3. Peak wavelength λp=940nm.
5(.197)
4. Good spectral matching to si-photodetector.
1.0(.040)
1.5(.059) MAX.
5. Radiant angle: 60°
Flat Denotes Cathode
23.4(.921) MIN.
6. Lens Appearance: Water Clear
Cathode
7. This product doesn't contain restriction
5.9(.232)
substance, comply ROHS standard
0.5(0.197) SQ TYP.
1.0(.040) MIN.
2.54(.100) NOM
z
Applications:
1. Remote Control.
NOTES:
2. Automatic Control System.
3.Lead spacing is measured where the leads emerge from the package.
4. Specifications are subject to change without notice.
1.All dimensions are in millimeters (inches).
2.Tolerance is ±0.25mm (0.01’) unless otherwise specified.
z Absolute Maximum Ratings(Ta=25℃)
Parameter
Symbol
Rating
Unit
Power Dissipation
Pd
100
mW
Continuous Forward Current
IF
100
mA
IFP
1.0
A
VR
5
V
Operating Temperature
Topr
-45℃~85℃
-
Storage Temperature
Tstg
-45℃~100℃
-
Soldering Temperature
Tsol
260℃(for 5 seconds)
-
Peak Forward Current
*1
Reverse Voltage
*1
Condition for is IFP pulse of 1/10 duty and 0.1 msec width.
Rev:2.0
Page1 of 4
BRIGHT LED ELECTRONICS CORP.
BIR-BM13V4V-2
SINCE 1981
z
Optical- Electrical Characteristics (@TA=25℃)
Parameter
Symbol
Test Conditions
Min
TYP
Max
Unit
Radiant Intensity
Ie
If=50mA
8.41
17.06
-
mW/sr
Forward Voltage
VF
IF=50mA
-
1.25
1.5
V
Reverse Current
IR
VR=5V
-
-
100
µA
Peak Wavelength
λp
IF=20mA
-
940
-
nm
Spectral Line Half- Width
∆λ
IF=20mA
-
50
-
nm
Viewing Angle
2θ1/2
IF=20mA
-
60
-
deg
z Typical Optical-Electrical Characteristic Curves
Fig.2 Forward Current Vs
Ambient Temperature
Fig.1 Spectral Dlstrbution
120
Forward Current IF (mA)
Relative Radiant Intensity
1.0
0.5
840
100
80
60
40
20
0
-40
1040
940
Wavelength
Output Power To Value @50mA
Forward Current
80
60
40
20
1.0
0
2.0
0
20
40
60
80
100
Fig.4 Relative Radiant Intensity
Vs Ambient Tembeb Ature
Fig.3 Forward Current Vs
(mA)
100
0
-20
Ambient Temperature
(nm)
4.0
3.0
3.0
2.5
2.0
1.5
1.0
0.5
0
-40
(V)
Forward Voltage
-20
0
20
40
60(°C)
Ambient Temperature
FIG.6 Radiation Diagram
Fig.5 Relative Radiant Intensity
Vs Forward Current
0
10
20
30
Relative Radiant Intensity
Output Power Relative To
Value At @ 50mA
4.0
3.0
2.0
1.0
0
1.0
40
0.9
50
0.8
60
70
0.7
80
90
0
20
40
60
Forward Current
80
100
0.5
0.3
0.1
0.2
0.4
0.6
(mA)
Rev:2.0
Page2 of 4
BRIGHT LED ELECTRONICS CORP.
BIR-BM13V4V-2
SINCE 1981
z
Tapping and packaging specifications(Units: mm)
z Packaging
Bag Dimensions
Notes:
1、500pcs per bag, 5Kpcs per box.
2、All dimensions are in millimeters(inches).
3、Specifications are subject to change without notice.
Rev:2.0
Page3 of 4
BRIGHT LED ELECTRONICS CORP.
BIR-BM13V4V-2
SINCE 1981
Infrared Emitting Diode Specification
Commodity: Infrared emitting diode
Intensity Bin Limits (At 50mA)
BIN CODE
Min.(mW/sr)
Max.(mW/sr)
10
6.00
11.38
11
8.41
15.95
12
11.78
22.33
13
16.50
31.28
14
23.12
43.79
15
32.36
61.30
Rev:2.0
Page4of 4