BRIGHT LED ELECTRONICS CORP. BL-BEG271 SINCE 1981 ● Features: ● Package Dimensions: 1. Chip material: GaAsP/GaP(Red) and GaP/GaP (Green) 3.00(.118) 2. Emitted color :Hi-Eff Red and Green 3. Lens Appearance : White Diffused 5.30(.209) 0.81(.032) 4. Low power consumption. 5. High efficiency. 6. Versatile mounting on P.C. Board or panel. 1.5(.059) MAX. Green Cathode Hi-Eff Red Cathode 25.4(1.0) MIN. 7. Low current requirement. 8. 3mm diameter package 0.5(.02) SQ. TYP. 3.8(.15) 9. This product don’t contained restriction substance, compliance ROHS standard. 1.0(.04) MIN. 2.54(.10) NOM. Notes: ● Applications: 1. All dimensions are in millimeters (inches). 1. TV set 2. Tolerance is ±0.25mm (0.01”) unless otherwise specified. 3. Lead spacing is measured where the leads emerge from the package. 4. Specifications are subject to change without notice. 2. Monitor 3. Telephone 4. Computer 5. Circuit board ● Absolute Maximum Ratings(Ta=25℃) Parameter Symbol Hi-Eff Red Green Unit Power Dissipation Pd 80 80 mW Forward Current IF 30 30 mA Peak Forward Current*1 IFP 150 150 mA Reverse Voltage VR 5 Operating Temperature Topr -40℃~80℃ Storage Temperature Tstg -40℃~85℃ Soldering Temperature Tsol 260℃(for 5 seconds) V *1Condition for IFP is pulse of 1/10 duty and 0.1msec width. Ver.1.0 1.1 Page: 1 of 2 BRIGHT LED ELECTRONICS CORP. BL-BEG271 SINCE 1981 ● Electrical and optical characteristics(Ta=25℃) Parameter Symbol Condition Forward Voltage VF IF=20mA Luminous Intensity Iv IF=20mA Reverse Current IR VR=5V Peak Wave Length λp IF=20mA Dominant Wave Length λd IF=20mA Spectral Line Half-width ∆λ IF=20mA Viewing Angle 2θ1/2 IF=20mA Color Min. Hi-Eff Red Green Hi-Eff Red Green Hi-Eff Red Green Hi-Eff Red Green Hi-Eff Red Green Hi-Eff Red Green Hi-Eff Red Green Typ. Max. Unit 2.1 2.2 30 30 2.6 2.6 V - mcd - 100 µA 617 560 - 640 568 40 30 - nm 638 576 nm - nm 45 - deg ● Typical Electro-Optical Characteristics Curves Fig.1 Relative intensity vs. Wavelength Fig.2 Forward current derating curve vs. Ambient temperature (E) (G) 1.0 60 Forward current(mA) Relative radiant intensity 50 0.5 40 30 20 10 0 500 580 640 0 720 20 Wavelength λ(nm) Fig.3 Forward current vs. Forward voltage 100 80 3.0 (G) Relative luminous intensity (E) 40 30 20 10 0 1 2 3 4 2.5 2.0 1.5 1.0 0.5 0 -40 5 -20 0 20 40 60 Ambient temperature Ta(℃) Forward voltage(V) Fig.5 Relative luminous intensity vs. Forward current Fig.6 Radiation diagram 0 8.0 10 20 30 (G) 7.0 6.0 (E) 5.0 4.0 3.0 2.0 Relative radiant intensity Relative luminous intensity(@20mA) 60 Fig.4 Relative luminous intensity vs. Ambient temperature 50 Forward current(mA) 40 Ambient temperature Ta(℃) 1.0 40 0.9 50 0.8 60 70 0.7 80 1.0 90 0 5 10 20 30 40 50 0.5 0.3 0.1 0.2 0.4 0.6 Forward current (mA) Ver.1.0 Page: 2 of 2