AMERICAN BRIGHT OPTOELECTRONICS CORP. GaN BL-PDx-JJx Series • Feature: 1. High brightness surface mount LED. 2. Based on GaN technology. 3. 120° viewing angle. 4. Small package outline (LxWxH) of 2.8 x 3.2 x 1.8 mm. 5. Qualified according to JEDEC moisture sensitivity Level 2. 6. Compatible to both IR reflow soldering and TTW soldering. • Package Dimension: Solder Pad Design V.2 Page: 1 of 6 AMERICAN BRIGHT OPTOELECTRONICS CORP. GaN BL-PDx-JJx Series • Optical Characteristics: Part Number BL-PDB-JJS-C10 • BIN K1 • BIN K2 • BIN L1 • BIN L2 BL-PDW-JJD-C10 • • • • BIN N1 BIN N2 BIN P1 BIN P2 Chip Technology / Viewing Luminous Intensity @ If = 20mA Color Angle Iv ( mcd ) 7.2 … 18.0 GaN / 120 7.2 … 9.0 9.0 … 11.2 11.2 … 14.0 14.0 … 18.0 Blue, 466 nm GaN / 120 28.5 … 71.5 White 28.5 … 35.5 … 45.0 … 56.0 … 35.5 45.0 56.0 71.5 NOTE: 1. Other luminous intensity groups are also available upon request. 2. Luminous intensity is measured with an accuracy of ±11%. 3. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel. 4. An optional Vf binning is also available upon request. Binning scheme is as per following table. • Absolute Maximum Ratings: Parameter Maximum Value Unit DC forward current. 20 mA Peak pulse current; (tp ≤ 10 µs, Duty cycle = 0.005) 200 mA Forward voltage (IF=20mA) 4.55 V Reverse voltage (IR=10 µA) 5 V 125 °C Operating temperature. -40 … +100 °C Storage temperature. -40 … +100 °C LED junction temperature. Power dissipation ( at room temperature ) 85 mW V.2 Page: 2 of 6 AMERICAN BRIGHT OPTOELECTRONICS CORP. GaN BL-PDx-JJx Series • Vf Binning: Vf Bin @ 20mA Forward voltage (V) Standard 3.65 … 4.55 02 3.65 … 3.95 03 3.95 … 4.25 04 4.25 … 4.55 Forward voltage, Vf is measured with an accuracy of ± 0.1 V. • BL-PDW, White Color Grouping GaN White Bin Structure 0.5 0.48 0.46 0.44 0.42 0.4 0.38 0.36 0.34 0.32 0.3 0.28 0.26 0.24 0.22 0.2 0.25 Y2 Y1 X2 X1 0.26 0.27 Bin X1 X2 Y1 Y2 0.28 0.29 Cx Cy Cx Cy Cx Cy Cx Cy 0.3 0.31 1 0.303 0.307 0.315 0.328 0.328 0.349 0.340 0.369 0.32 0.33 2 0.315 0.328 0.328 0.349 0.34 0.369 0.353 0.39 0.34 0.35 3 0.315 0.363 0.328 0.384 0.34 0.404 0.353 0.425 0.36 0.37 4 0.303 0.342 0.315 0.363 0.328 0.384 0.340 0.404 Color coordinate is measured with an accuracy of ±0.01 V.2 Page: 3 of 6 AMERICAN BRIGHT OPTOELECTRONICS CORP. GaN BL-PDx-JJx Series • Typical electro-optical characteristics curves: Fig. 1 Relative luminous intensity vs. forward current. Fig. 2 Forward current vs. forward voltage. Forward Current (mA) vs. Forward Voltage (GaN:Blue) Intensity vs. DC Forward Current Relative intensity. Normalized at 20 mA. 35 1.6 30 Forward Current (mA) 1.4 1.2 1.0 0.8 0.6 0.4 25 20 15 10 5 0.2 0 0.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 2.0 35.0 2.5 3.0 Fig. 3 Radiation pattern. 30° 10° 20° 4.5 5.0 Fig. 4 Maximum forward current vs. temperature. 25 20 Forward Current, If 0.8 0.6 50° 4.0 0° 1.0 40° 3.5 Forward Voltage (V) FORWARD CURRENT (mA) 15 10 0.4 60° 5 70° 0.2 0 0 80° 10 20 30 40 50 60 70 80 90 Ambient Temperature 0 90° Fig. 5 Relative Intensity vs. Wavelength Relative Spectral Emission 1.0 0.9 Relative Intensity 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 400 450 500 550 600 650 700 Wavelength (nm) V.2 Page: 4 of 6 100 AMERICAN BRIGHT OPTOELECTRONICS CORP. GaN BL-PDx-JJx Series Fig. 6 Recommended IR-reflow Soldering Profile. Fig. 7 Recommended TTW Soldering Profile. V.2 Page: 5 of 6 AMERICAN BRIGHT OPTOELECTRONICS CORP. GaN BL-PDx-JJx Series • Taping And Orientation. Reels come in quantity of 8000 units or 2000 units. Reel diameters are 330 mm and 180 mm respectively. V.2 Page: 6 of 6