BRIGHT BPD-RQ09DY-A

BRIGHT LED ELECTRONICS CORP.
BPD-RQ09DY-A
For AB
SINCE 1981
SIDE- LOOK PACKAGE
PIN PHOTO DIODE
●Package Dimensions:
Features
5.0± 0.1
(.197± .004)
1. Wide receiving angle
2. Linear response vs. irradiance
4.3± 0.2
(.169± .008)
3. Fast switching time
4. Side-looking Package ideal for space
6.5± 0.2
(.256± .008)
limited applications
4.0± 0.5
(.157± .020)
5. Lens Appearance: Black
15.0(.591) MIN.
?0.5(.020)
Description
The BPD-RQ09DY-Adevice consists
1.0(.039) MIN.
2.54(.100)
of a PIN silicon photodiode molded in
a clear epoxy package which allows
1
spectral response from visible to
infrared light wavelengths. The wide
1. Cathode
2. Anode
receiving angle provides relatively even
1
reception over a large area. The
side-looking package is designed for
easy PC board mounting. This photodiode
is mechanically and spectrally matched to
3.8± 0.1
(.150± .004)
2
2
NOTES:
1.All dimensions are in millimeters (inches).
2.Tolerance is ±0.25mm (0.01’) unless otherwise specified.
3.Lead spacing is measured where the leads emerge from the package
4. Specifications are subject to change without notice
BRIGHT’s GaAs and GaAlAs series of infrared
emitting diodes.
Absolute Maximum Ratings(Ta=25℃)
Parameter
Power Dissipation
Reverse Breakdown Voltage
Maximum Rating
Unit
100
mW
60V
Operating Temperature
-45℃~+85℃
Storage Temperature Range
-45℃~+100℃
Lead Soldering Temperature
260℃ for 5 seconds
REV.2.0
Page:1 of 2
BRIGHT LED ELECTRONICS CORP.
BPD-RQ09DY-A
For AB
SINCE 1981
Electrical Characteristics (TA=25℃ unless otherwise noted)
Reverse Light Current
SYM
BOL
IL
Reverse Dark Current
ID
-
-
30
nA
VR=30V.Ee=0
V(BR)
30
-
-
V
IR=100µA
Forward Voltage
VF
-
-
1.2
V
IF=1mA
Total Capacitance
CT
-
25
-
PF
VR=20V.Ee=0,f=1.0MHZ
Rise Time/ Fall Time
tr/tf
-
50
-
ns
VR=20V,λ=850nm.RL=50Ω
PARAMETER
Reverse Break down Voltage
MIN
TYP
MAX
UNITS
TEST CONDITIONS
-
12
-
µA
VR=5V.Ee=5mW/cm2
Typical Optical-Electrical Characteristic Curves
Relative Response vs.
Wavelength
Relative Response
Relative Output Current
Coupling Characteristics
Normalized Light and Dark
Current vs Ambient Temperture
Normalized Dark Current
Total Capacitance vs
Reverse Voltage
Total Capacitance
Normalized Light Current
Normalized Light Current vs
Reverse Voltage
TA=25℃
Ee=0mW/cm2
f=1MHZ
VR=5V
λ=935nm
Normalized to
TA=25 c
Dark Cuttent
Ambient Temperature
Reverse Voltage
Reverse Voltage
Light Current
Light Current vs. Angular
Displacement
Light Current vs. lrradiance
VR
OUT
2
Note:
See Above For.
Conditions
RL
Normalized Current
IL-light Current-uA
Switching Time Test Circuit
IF
VR=5V
TA=25°C
λ=935nm
Test Conditions
λ=935nm
VR=5V
Distance Lens to
Lens=1.5inches
Angular Displacement-Deg
lrradiance-mW/cm
REV.2.0
Page:2 of 2
Normalized Light Current
Distance Between Lens Tips-inches
Wavelength
TA=25°C
λ=935nm
Normalized to VR=5V
VR=5V
IF=20mA
BRIGHT LED ELECTRONICS CORP.
BPD-RQ09DY-A
For AB
SINCE 1981
Photo Diode Specification
Commodity: Photo diode
Light Current Bin Limits (Vr=5V)
BIN CODE
Min.(uA)
Max.( uA)
A
5.5
18.5
B
16.5
22.5
C
20.5
43.5