BRIGHT LED ELECTRONICS CORP. BPD-RQ09DY-A For AB SINCE 1981 SIDE- LOOK PACKAGE PIN PHOTO DIODE ●Package Dimensions: Features 5.0± 0.1 (.197± .004) 1. Wide receiving angle 2. Linear response vs. irradiance 4.3± 0.2 (.169± .008) 3. Fast switching time 4. Side-looking Package ideal for space 6.5± 0.2 (.256± .008) limited applications 4.0± 0.5 (.157± .020) 5. Lens Appearance: Black 15.0(.591) MIN. ?0.5(.020) Description The BPD-RQ09DY-Adevice consists 1.0(.039) MIN. 2.54(.100) of a PIN silicon photodiode molded in a clear epoxy package which allows 1 spectral response from visible to infrared light wavelengths. The wide 1. Cathode 2. Anode receiving angle provides relatively even 1 reception over a large area. The side-looking package is designed for easy PC board mounting. This photodiode is mechanically and spectrally matched to 3.8± 0.1 (.150± .004) 2 2 NOTES: 1.All dimensions are in millimeters (inches). 2.Tolerance is ±0.25mm (0.01’) unless otherwise specified. 3.Lead spacing is measured where the leads emerge from the package 4. Specifications are subject to change without notice BRIGHT’s GaAs and GaAlAs series of infrared emitting diodes. Absolute Maximum Ratings(Ta=25℃) Parameter Power Dissipation Reverse Breakdown Voltage Maximum Rating Unit 100 mW 60V Operating Temperature -45℃~+85℃ Storage Temperature Range -45℃~+100℃ Lead Soldering Temperature 260℃ for 5 seconds REV.2.0 Page:1 of 2 BRIGHT LED ELECTRONICS CORP. BPD-RQ09DY-A For AB SINCE 1981 Electrical Characteristics (TA=25℃ unless otherwise noted) Reverse Light Current SYM BOL IL Reverse Dark Current ID - - 30 nA VR=30V.Ee=0 V(BR) 30 - - V IR=100µA Forward Voltage VF - - 1.2 V IF=1mA Total Capacitance CT - 25 - PF VR=20V.Ee=0,f=1.0MHZ Rise Time/ Fall Time tr/tf - 50 - ns VR=20V,λ=850nm.RL=50Ω PARAMETER Reverse Break down Voltage MIN TYP MAX UNITS TEST CONDITIONS - 12 - µA VR=5V.Ee=5mW/cm2 Typical Optical-Electrical Characteristic Curves Relative Response vs. Wavelength Relative Response Relative Output Current Coupling Characteristics Normalized Light and Dark Current vs Ambient Temperture Normalized Dark Current Total Capacitance vs Reverse Voltage Total Capacitance Normalized Light Current Normalized Light Current vs Reverse Voltage TA=25℃ Ee=0mW/cm2 f=1MHZ VR=5V λ=935nm Normalized to TA=25 c Dark Cuttent Ambient Temperature Reverse Voltage Reverse Voltage Light Current Light Current vs. Angular Displacement Light Current vs. lrradiance VR OUT 2 Note: See Above For. Conditions RL Normalized Current IL-light Current-uA Switching Time Test Circuit IF VR=5V TA=25°C λ=935nm Test Conditions λ=935nm VR=5V Distance Lens to Lens=1.5inches Angular Displacement-Deg lrradiance-mW/cm REV.2.0 Page:2 of 2 Normalized Light Current Distance Between Lens Tips-inches Wavelength TA=25°C λ=935nm Normalized to VR=5V VR=5V IF=20mA BRIGHT LED ELECTRONICS CORP. BPD-RQ09DY-A For AB SINCE 1981 Photo Diode Specification Commodity: Photo diode Light Current Bin Limits (Vr=5V) BIN CODE Min.(uA) Max.( uA) A 5.5 18.5 B 16.5 22.5 C 20.5 43.5