Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSC3968 CSC3968 NPN PLASTIC POWER TRANSISTOR High Voltage Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 C E F K All dim insions in m m . L N O 1 2 3 O A H B J D G M ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (D.C.) Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 1A; IB = 0.2A D.C. current gain IC = 0.1A; VCE = 5V RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (DC) Collector current (Pulse) (1) Continental Device India Limited Data Sheet DIM M IN. A B C D E F G H J K L M N O 14.42 9.63 3.56 3 M A X. 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7 VCBO VCEO IC Ptot Tj max. max. max. max. max. 400 400 2.0 20 150 VCEsat max. 1.0 V hFE min. max. 16 50 VCBO VCEO VEBO IC IC max. max. max. max. max. 400 400 7.0 2.0 4.0 V V A W °C V V V A A Page 1 of 3 CSC3968 Total power dissipation up to TC = 25°C Total power dissipation up to TA = 25°C Junction temperature Storage temperature Ptot Ptot Tj Tstg max. 20 W max. 1.5 W max. 150 ºC –65 to +150 ºC ICBO max. 10 µA IEBO max. 10 µA VCEO VCBO VEBO min. min. min. 400 V 400 V 7.0 V VCEsat* VBEsat* max. max. 1.0 V 1.5 V hFE min. max. 16 50 Co typ. 30 pF fT* typ. 10 MHz ton ts tf max. max. max. 1.0 µs 2.5 µs 1.0 µs CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 400V Emitter cut-off current IC = 0; VEB = 7V Breakdown voltages IC = 1 mA; IB = 0 IC = 50 µA; IE = 0 IE = 50 µA; IC = 0 Saturation voltages IC = 1 A; IB = 0.2 A D.C. current gain IC = 0.1A; VCE = 5V** Output capacitance at f = 1 MHz IE = 0; VCB = 10V Transition frequency IC = 0.5A; VCE = 10V; f = 5 MHz Switching time IC = 0.8A; RL = 250Ω IB1 = –I B2 = 0.08A VCC = 200V Turn on time Storage time Fall time (1) Single Pulse Pw = 10 ms * Pulse test ** hFE classification: A: 16-34 B: 25-50 Continental Device India Limited Data Sheet Page 2 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 [email protected] www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3