CDIL MJD13003

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLASTIC POWER TRANSISTOR
MJD13003
DPAK (TO-252)
Plastic Package
Designed for High Voltage, High Speed Power Switching Inductive Circuits Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VCEO
Collector Emitter Voltage
VCEV
Collector Emitter Voltage
VEBO
Emitter Base Voltage
IC
Collector Current Continuous
*ICM
Peak
IB
Base Current Continuous
*IBM
Peak
IE
Emitter Current Continuous
*I
Peak
EM
Total Power Dissipation at Ta=25ºC
**PD
Derate Above 25ºC
Total Power Dissipation at Tc=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Junction to Case
VALUE
400
700
9.0
1.5
3.0
0.75
1.5
2.25
4.5
1.56
0.0125
15
0.12
UNIT
V
V
V
A
A
A
A
A
A
W
W/ºC
W
W/ºC
Tj, Tstg
- 65 to +150
ºC
Rth (j-c)
8.33
ºC/W
**Rth (j-a)
80
ºC/W
260
ºC
PD
Junction to Ambient in free air
Maximum Lead Temperature for
TL
Soldering Purposes
*Pulse Test:- Pulse Width=5ms, Duty Cycle < 10%
** When Surface Mounted on Minimum Pad Sizes Recommended
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
VCEO
IC=1mA, IB=0
Collector Emitter Voltage
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
MIN
400
TYP MAX
UNIT
V
ICEV
VCEV=Rated Value, VBE (off)=1.5V
0.1
mA
IEBO
***hFE
VCEV=Rated Value, VBE (off)=1.5V, Tc=100ºC
VEB=9V, IC=0
IC=0.5A, VCE=2V
IC=1A, VCE=2V
2.0
1.0
40
25
mA
mA
8.0
5.0
***Pulse Test:- Pulse Width < 300µ
µ s, Duty Cycle < 2%
MJD13003Rev160506E
Continental Device India Limited
Data Sheet
Page 1 of 5
NPN SILICON PLASTIC POWER TRANSISTORS
MJD13003
DPAK (TO-252)
Plastic Package
4
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Saturation
Voltage
SYMBOL
TEST CONDITION
***VCE (sat)
IC=0.5A, IB=0.1A
0.5
V
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=1A, IB=0.25A, TC=100ºC
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1A, IB=0.25A, TC=100ºC
1.0
3.0
1.0
1.0
1.2
1.1
V
V
V
V
V
V
Base Emitter Saturation Voltage
***VBE (sat)
DYNAMIC CHARACTERISTICS
DESCRIPTION
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
fT
Cob
TEST CONDITION
IC=100mA, VCE=10V, f=1MHz
VCB=10V, IE=0V, f=0.1MHz
Resistive Load
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf
VCC=125V, IC=1A, IB1=IB2=0.2A, tp=25µs,
Duty Cycle 1%
Inductive Load, Clamped
Voltage Storage Time
Crossover Time
Fall Time
tsv
tC
tfi
VClamp=300V, IC=1A, IB1=0.2A, VBE(off)=5V,
Tc=100ºC
Second Breakdown Characteristics
DESCRIPTION
SYMBOL
Second Breakdown Collector
IS/b
Current with Base Forward Biased
MARKING
MIN
MIN
4.0
TYP MAX
TYP MAX
21
UNIT
UNIT
MHz
pF
0.1
1.0
4.0
0.7
µs
µs
µs
µs
4.00
0.75
µs
µs
µs
0.15
TEST CONDITION
MIN
VCE=100V, t=1.0 sec
0.15
TYP MAX
UNIT
A
CDIL
MJD13003
XY
MX
XY= Date Code
***Pulse Test:- Pulse Width < 300µ
µ s, Duty Cycle < 2%
MJD13003Rev160506E
Continental Device India Limited
Data Sheet
Page 2 of 5
MJD13003
DPAK (TO-252)
Plastic Package
MJD13003Rev160506E
Continental Device India Limited
Data Sheet
Page 3 of 5
MJD13003
DPAK (TO-252)
Plastic Package
MJD13003Rev160506E
Continental Device India Limited
Data Sheet
Page 4 of 5
Customer Notes
MJD13003
DPAK (TO-252)
Plastic Package
Component Disposal Instructions
1. CDIL Semiconductor Devices are RoHS compliant, customers are requested to please
dispose as per prevailing Environmental Legislation of their Country.
2.
In Europe, please dispose as per EU Directive 2002/96/EC on Waste Electrical and
Electronic Equipment (WEEE).
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for
application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to
confirm that the Device(s) meet functionality parameters for your application. The information furnished in the Data Sheet and on
the CDIL Web Site/CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or
incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any
CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for
use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 4141 1112 Fax + 91-11-2579 5290, 4141 1119
[email protected]
www.cdilsemi.com
MJD13003Rev160506E
Continental Device India Limited
Data Sheet
Page 5 of 5