CEL NDL5551P1D

1000 to 1600 nm OPTICAL
FIBER COMMUNICATIONS φ50 µm InGaAs
AVALANCHE PHOTO DIODE MODULE
NDL5551P
SERIES
FEATURES
DESCRIPTION
• SMALLER DARK CURRENT:
ID = 5 nA
The NDL5551P Series are InGaAs PIN photo diode modules
with multimode fiber. They are designed for detectors of long
wavelength transmission systems and cover the wavelength
range setween 1000 and 1600 nm.
• HIGH QUANTUM EFFICIENCY:
η = 90% at λ = 1300 nm, M = 1
η = 77% at λ = 1550 nm, M = 1
• HIGH SPEED RESPONSE:
fC = 1.2 GHz @ M = 20
• DETECTING AREA SIZE:
φ 50 µm
• COAXIAL MODULE WITH MULTIMODE FIBER:
GI-50/125
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C)
PART NUMBER
SYMBOLS
V(BR)R
Reverse Breakdown Voltage, ID =100 µA
δ1
Temperature Coefficient of Reverse Breakdown Voltage
ID
UNITS
MIN
V
50
TYP
MAX
70
100
%/ºC
0.2
Dark Current, VR = V(BR)R x 0.9
nA
5
IDM
Multiplied Dark Current, M = 2 to 10
nA
1
5
Ct
Terminal Capacitance, VR = V(BR)R x 0.9, f = 1 MHz
pF
0.4
0.75
fC
Cut-off Frequency, M = 10
M = 20
η
Quantum Efficiency, λ = 1300 nm, M = 1
λ = 1550 nm, M = 1
S
Responsivity, λ = 1300 nm
λ = 1550 nm
M
Multiplication Factor, λ = 1300 nm, IPO = 1.0 µA
VR = V (@ID = 1 µA)
x
Excess Noise Exponent, λ = 1300 nm, 1550 nm,
IPO =1.0 µA, M = 10, f = 35 MHz, B = 1 MHz
F
Excess Noise Factor, λ = 1300 nm, 1550 nm,
IPO =1.0 µA, M = 10, f = 35 MHz, B = 1 MHz
Note:
1. δ =
PARAMETERS AND CONDITIONS
NDL5551P Series
GHz
1
1.5
1.2
%
76
65
90
77
A/W
0.8
0.81
0.94
0.96
30
40
30
0.7
5
V(BR)R < 25°C + ∆T°C > - V(BR)R <25°C>
∆T°C • V(BR)R <25°C>
California Eastern Laboratories
NDL5551P SERIES
ABSOLUTE MAXIMUM RATINGS1
(TC = 25°C, unless otherwise specified)
SYMBOLS
PARAMETERS
UNITS
RATINGS
IF
Forward Current
mA
10
IR
Reverse Current
mA
0.5
TC
Operating Case Temp.
°C
-40 to +85
Storage Temperature
°C
-40 to +85
TSTG
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TC = 25°C, unless otherwise specified)
TEMPERATURE DEPENDENCE OF
RESPONSIVITY
WAVELENGTH DEPENDENCE OF
QUANTUM EFFICIENCY
Responsivity (Relative Value), ∆S/S (%)
Quantum Efficiency, η (%)
100
80
60
40
20
0
10
λ = 1300 nm
0
-10
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
-60
Wavelength, λ (µm)
DARK CURRENT AND PHOTO
CURRENT VS. REVERSE VOLTAGE
-20
0
20
40
60
80
100
DARK CURRENT vs.
REVERSE VOLTAGE
-6
10
10-3
λ = 1300 nm
IPO = 1.0 µA
TC = 25°C
10-4
10-7
lph
10-5
Dark Current, ID (A)
Dark Current, Photo Current, ID, lph (A)
-40
Operating Case Temperature, TC (°C)
10-6
10-7
10-8
TC = 85°C
10-8
TC = 65°C
10-9
TC = 25°C
ID
10-9
TC = -20°C
10-10
-10
10
0
20
40
60
80
Reverse Voltage, VR (V)
100
0
20
40
60
80
Reverse Voltage, VR (V)
100
NDL5551P SERIES
TYPICAL PERFORMANCE CURVES (TC = 25°C, unless otherwise specified)
TEMPERATURE DEPENDENCE OF
DARK CURRENT and MULTIPLIED
DARK CURRENT
Multiplication Factor, M
103
TC = 65°C
102
TC = -20°C
TC = 25°C
101
TC = 85°C
100
0
20
40
60
80
100
Dark Current, Multiplied Dark Current ID,
IDM (A)
MULTIPLICATION FACTOR vs.
REVERSE VOLTAGE
10-6
λ = 1300 nm
10-7
ID @ VR = 0.9 V(BR)R
10-8
10-9
IDM
10-10
10-11
-60
-40
-20
0
20
40
60
80
100
Reverse Voltage, VR (V)
Operating Case Temperature, TC (ºC)
FREQUENCY RESPONSE
CUT-OFF FREQUENCY vs.
MULTIPLICATION FACTOR
10
λ = 1300 nm
RL = 50Ω
M=8
TC = 25°C
Response, (3 dB/div.)
Cut-off Frequency, fC (GHz)
TC = 25°C
0
1.0
2.0
3.0
4.0
1
0.1
5.0
Frequency, f (GHz)
1
10
100
Multiplication Factor, M
TERMINAL CAPACITANCE vs.
REVERSE VOLTAGE
EXCESS NOISE FACTOR vs.
MULTIPLICATION FACTOR
100
1300 nm ( ), 1550 nm ( )
f = 35 MHz, B = 1 MHz
50
Excess Noise Factor, F
Terminal Capacitance, Ct (pF)
2
1
0.5
0.2
0.5
0.4
20
10
5
2
1
0.1
1
2
5
10
20
Reverse Voltage, VR (V)
50
100
1
2
5
10
20
Multiplication Factor, M
50
100
NDL5551P SERIES
OUTLINE DIMENSIONS (Units in mm)
NDL5551P
NDL5551P1
Optical Fiber
GI-50/125
Length: 1 m MIN
Optical Fiber
GI-50/125
Length: 1 m MIN
Shrunk Tube
Shrunk Tube
φ2.5
14.0±0.1
φ2.5
+0.0
6.9±0.3 φ6.0- 0.1
φ6.0 - 0.1
6.9±0.3
+0.0
2
4.0±0.1
3.9±0.5
φ2.2 (2 places)
12.5 MIN
φ0.45
6.0 - 0.1
30.0 MAX
+0.0
30.0 MAX
12.5 MIN
3
1
7.0±0.3
2
3
1
3.0±0.3
4.0±0.3
φ2.0
1.5
φ2.0
18.0±0.1
PIN CONNECTIONS
1. Anode (Negative)
2. Cathode (Positive)
3. Case
NDL5551P2
Shrunk Tube
φ2.5
30.0 MAX
+0.0
φ6.0- 0.1
12.5 MIN
φ2.5 (2 places)
2
3
1
φ2.0
12.0±0.1
16.0±0.2
3
1
ORDERING INFORMATION
Optical Fiber
GI-50/125
Length: 1 m MIN
2.5±0.1
0.5±0.1
2
7.0±0.15
PART NUMBER
NDL5551P
NDL5551PC
NDL5551PD
NDL5551P1
NDL5551P1C
NDL5551P1D
NDL5551P2
NDL5551P2C
NDL5551P2D
AVAILABLE CONNECTOR
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
DESCRIPTION
No Flange
Flat Mount
Flange
Vertical Flange
NDL5551P SERIES
HANDLING PRECAUTION FOR PD/APD MODULE
The NEC PD/APD module has heat shrink tubing to protect the ferrule edge (*1) and the junction between the ferrule and the module
body (*2). In order to avoid breaking the fiber and/or optical coupling degradation, NEC recommends the following handling
precautions:
1. Do not make the fiber bend radius less than 30 mm (*3).
2. Do not bend the fiber within the 18 mm section from the module body (*4).
3. Do not stress the ferrule with a lateral force exceeding 500 g (*5).
fiber
30 mm MIN (*3)
(*1)
18 mm MIN (*4)
ferrule (*5)
(*2)
module body
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
01/17/2001
DATA SUBJECT TO CHANGE WITHOUT NOTICE