CEL NX5310EK-AZ

LASER DIODE
NX5310 Series
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH
InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5310 Series is a 1 310 nm Multiple Quantum Well (MQW)
structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
devices are designed for application up to 1.25 Gb/s.
APPLICATIONS
• STM-1 (I-1, S-1.1), STM-4 (I-4, S-4.1), ITU-T recommendations
• FTTH P2P (Fiber To The Home Point to Point) system
FEATURES
• Optical output power
Po = 5.0 mW
• Low threshold current
lth = 6 mA
• Differential efficiency
ηd = 0.3 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package
φ 5.6 mm
• Fiber coupling point
5.8 mm
Document No. PL10526EJ02V0DS (2nd edition)
Date Published July 2006 NS CP(K)
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NX5310 Series
PACKAGE DIMENSIONS (UNIT: mm)
φ 5.6+0.00
–0.03
*1
(φ 4.2)
*1
1.0±0.1
BOTTOM VIEW
1
(0.3)
110˚±2˚
*1
(φ 3.55)
2
4
3
*1
(0.3)
Focal Point
5.80 typ
3.10
3.90±0.2
φ 1.5
∆x = ±300 µ m
∆y = ±300 µ m
PIN CONNECTIONS
NX5310EH
Reference
Plane
1 (Case)
2
4
2
4– φ 0.45
LD
LD
3
*1 ( ) indicates nominal dimension.
Data Sheet PL10526EJ02V0DS
4
PD
PD
φ 2.0
2
NX5310EK
1 (Case)
15.0±1.0 1.2±0.1
<R>
3
NX5310 Series
ORDERING INFORMATION
Part Number
NX5310EH-AZ*
Package
Pin Connections
1
4-pin CAN with ball lens cap
LD
4
2
PD
3
1
NX5310EK-AZ*
LD
2
4
PD
3
Remark The hermetic test will be performed as AQL 1.0%.
*NOTE:
Please refer to the last page of this data sheet, “Compliance with EU Directives” for
Pb-Free RoHS Compliance Information.
Data Sheet PL10526EJ02V0DS
3
NX5310 Series
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Optical Output Power
Po
10
mW
Forward Current of LD
IF
150
mA
Reverse Voltage of LD
VR
2.0
V
Forward Current of PD
IF
10
mA
Reverse Voltage of PD
VR
20
V
Operating Case Temperature
TC
−40 to +85
°C
Storage Temperature
Tstg
−40 to +85
°C
Assembly Temperature
Tasb
150 (15 Hr)
°C
Lead Soldering Temperature
Tsld
350 (3 sec.)
°C
Relative Humidity (noncondensing)
RH
85
%
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
1.1
1.5
V
10
20
35
mA
Operating Voltage
Vop
Po = 5.0 mW
Operating Current
Iop
Po = 5.0 mW
Threshold Current
Ith
3
6
15
mA
Differential Efficiency
ηd
0.2
0.3
0.7
W/A
Center Wavelength
λC
Po = 5.0 mW, RMS (−20 dB)
1 290
1 310
1 330
nm
Spectral Width
σ
Po = 5.0 mW, RMS (−20 dB)
1.0
2.0
nm
Rise Time
tr
10-90%
0.15
0.3
ns
Fall Time
tf
90-10%
0.15
0.3
ns
Lateral Beam Angle
θ//
Po = 5.0 mW
11
deg.
Vertical Beam Angle
θ⊥
Po = 5.0 mW
11
deg.
Monitor Current
Im
VR = 1.5 V, Po = 5.0 mW
Monitor Dark Current
ID
Monitor PD Terminal Capacitance
900
µA
VR = 10 V
100
nA
Ct
VR = 10 V, f = 1 MHz
20
pF
Focal Distance
Df
Po = 5.0 mW
5.0
5.8
6.2
mm
Optical Output Power from Fiber
Pf
Po = 5.0 mW, 8 degree angled fiber,
400
800
Optimized X, Y, θ. Z = 5.8 ± 0.05 mm.
4
Data Sheet PL10526EJ02V0DS
100
500
µW
NX5310 Series
TYPICAL CHARACTERISTICS (TC = −40 to +85°C, unless otherwise specified)
OPTICAL OUTPUT POWER
vs. FORWARD CURRENT
OPERATING CURRENT AND THRESHOLD
CURRENT vs. CASE TEMPERATURE
100
5 TC = –40˚C
+25˚C
Operating Current Iop (mA),
Threshold Current Ith (mA)
Optical Output Power Po (mW)
6
+85˚C
4
3
2
1
0
10
20
30
50
40
50
Iop
Ith
10
5
1
–60 –40 –20
0
20
40
60
80
100
Case Temperature TC (˚C)
Forward Current IF (mA)
TEMPERATURE DEPENDENCE OF
CENTER WAVELENGTH
1 350
Center Wavelength λC (nm)
<R>
1 340
1 330
1 320
1 310
1 300
1 290
1 280
1 270
–60 –40 –20
0
20
40
60
80
100
Case Temperature TC (˚C)
Remark The graphs indicate nominal characteristics.
Data Sheet PL10526EJ02V0DS
5
NX5310 Series
TYPICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
FORWARD CURRENT vs.
FORWARD VOLTAGE
OPTICAL OUTPUT POWER
vs. MONITOR CURRENT
Optical Output Power Po (mW)
10
40
30
20
10
0
1
2
1 200
800
Monitor Current Im (µA)
SPECTRUM
TOLERANCE OF FIBER
COUPLING DISTANCE (Z)
–20
–30
–40
–50
–60
–70
–80
1 310
1 320
1 330
0.80
Z
Pf
0.60
SMF
Po = 5.0 mW
0.40
0.20
0
5.2
Wavelength λ (nm)
5.4
5.6
5.8
6.0
Z-Axis Tolerance Z (mm)
Remark The graphs indicate nominal characteristics.
6
400
Forward Voltage VF (V)
–10
–90
1 300
5
0
3
Optical Output Power from Fiber Pf (mW)
Forward Current IF (mA)
50
Relative Intensity
<R>
Data Sheet PL10526EJ02V0DS
6.2
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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