F E AT U R E S MODEL NO. DA0900 Total Integration of GaAs MMIC Attenuators, Silicon MMIC Amplifiers, and TTL Drivers Ultra Small 1.3 x 1.5 Surface Mount Package HDI Dual Attenuator / Amplifier Phase and Amplitude Balance Channel to Channel CONTRASTING COLOR BEAD 1.500 RF OUT (A) RF IN (A) 1 1.300 8 RF IN (B) RF OUT (B) AMPLIFIER 16 GND 2 GND 32 dB +12 V +5 V 1 dB GND GND 16 dB 8 dB 4 dB 2 dB GND 15 GND • 16 dB 3 .100 TYP 9 16 (A) RF OUT ATTEN 6 SECTION (A) 1 RF IN .200 .200 • • 8 dB 4 13 +12V • 4 dB 5 .200 GND 7 12 +5V • 2 dB 6 .015 ±.002 16 PLACES 14 32 dB • 11 1 dB • • 10 GND PART IDENTIFICATION ATTEN 6 SECTION (B) 8 RF IN .010 ±.002 16 PLACES 9 (B) RF OUT .23 .142 TYP .032 TYP AMPLIFIER .005 .xx = .02 .xxx = .010 GUARANTEED PERFORM A NCE GAIN (dB) ISO (dB) 2.0 50 100 1.8 40 80 1.6 30 60 20 40 Cnannel To Channel VSWR Parameter T YP IC A L P E R F OR MA NCE at 25 °C 20 3 34 TTL Control Type Control Current High Low Insertion Gain Noise Figure Isolation Channel to Channel ISO 1.4 Min Typ Max Units Operating Frequency DC Current 14 60 40 Phase Vs. Attenuation GAIN Balance Attenuation 1.2 10 20 LSB Range VSWR 0 0 16 7 66 54 ±6 ±2 1 0 300 10 50 MHz mA mA ±40 ±40 20 10 µA µA dB dB dB dB DEG DEG dB dB dB ±10 ±5 63 Accuracy 1.0 0 0 10 40 100 FREQUENCY (MHz) 400 1000 0.2 1.2/1 50 36 20 +5 Balance VSWR Impedance Switching Speed Transition (Rise/Fall) Time RF Power Operate No Damage Operating Temperature DA I C O In d u s t r i e s -55 +25 ±0.5 1.4/1 50 +0 +20 +85 dB OHMS nSec nSec dBm dBm °C Conditions At +5 VDC Supply At +12 VDC Supply 6 Line Logic “0” = Thru Logic “1” = Attenuation VIH = +2.7V VIL = +0.5V 20 - 100 MHz 100 - 300 MHz Channel to Channel 1, 2, 4, 8, 16, 32 ±(0.25 dB ±2% of Atten. Setting in dB) Channel to Channel 50% TTL to 90% / 10% RF 90% / 10% or 10% / 90% RF 0.1 dB Compression TA Rev. - / Iss. 1