TI TS3DS26227YZTR

TS3DS26227
www.ti.com ................................................................................................................................................ SCDS224A – JUNE 2008 – REVISED SEPTEMBER 2008
HIGH-BANDWIDTH DUAL SPDT DIFFERENTIAL SIGNAL SWITCH
WITH INPUT LOGIC TRANSLATION
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1
2
•
High-Bandwidth Data Paths – Up to 800 MHz
Specified Break-Before-Make Switching
Control Inputs Reference to VIO
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
2.3-V to 3.6-V Power Supply (V+)
1.65-V to 1.95-V Logic Supply (VIO)
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 4000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
– 200-V Machine Model (A115-A)
Cell Phones
PDAs
Portable Instrumentation
Low-Voltage Differential Signal Routing
Mobile Industry Processor Interface (MIPI)
Signal Routing
YZP PACKAGE
(BOTTOM VIEW)
A
B C D
1
3
4
9
10
2
2
5
8
11
3
1
6
7
12
TERMINAL ASSIGNMENTS
A
B
C
D
NC1
1
IN1
NO1
COM1
2
VIO
GND
GND
V+
3
IN2
NO2
COM2
NC2
DESCRIPTION/ORDERING INFORMATION
The TS3DS26227 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from
2.3 V to 3.6 V. The device offers high-bandwidth data paths, and a break-before-make feature to prevent signal
distortion during the transferring of a signal from one path to another. The device has excellent total harmonic
distortion (THD) performance and consumes very low power. These features make this device suitable for
portable applications.
The TS3DS26227 has a separate logic supply pin (VIO) that operates from 1.65 V to 1.95 V. VIO powers the
control circuitry, which allows the TS3DS26227 to be controlled by 1.8-V signals.
ORDERING INFORMATION
TA
–40°C to 85°C
(1)
(2)
(3)
PACKAGE
(1) (2)
NanoFree™ – WCSP (DSBGA)
0.23-mm Large Bump – YZP (Pb-free)
ORDERABLE PART NUMBER
Tape and reel
TOP-SIDE MARKING (3)
TS3DS26227YZPR
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following
character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NanoFree is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008, Texas Instruments Incorporated
TS3DS26227
SCDS224A – JUNE 2008 – REVISED SEPTEMBER 2008 ................................................................................................................................................ www.ti.com
SUMMARY OF CHARACTERISTICS (1)
Dual 2:1
Multiplexer/Demultiplexer
(2 × SPDT)
Configuration
Number of channels
2
5 Ω max
ON-state resistance (ron)
0.1 Ω max
ON-state resistance match (Δron)
ON-state resistance flatness [ron(flat)]
3 Ω max
Turn-on/turn-off time (tON/tOFF)
9 ns/4 ns
Break-before-make time (tBBM)
8 ns
Charge injection (QC)
5.5 pC
Bandwidth (BW)
800 MHz
OFF isolation (OISO)
–40 dB
Crosstalk (XTALK)
–39 dB
Leakage current [INO(OFF)/INC(OFF)]
±5 nA
Power-supply current (I+)
±20 nA
Package options
(1)
12-bump WCSP
V+ = 2.7 V, TA = 25°C
FUNCTION TABLE
IN
NC TO COM,
COM TO NC
NO TO COM,
COM TO NO
L
ON
OFF
H
OFF
ON
LOGIC DIAGRAM
IN1
(See Note A)
NC1
COM1
NO1
NC2
COM2
NO2
IN2
(See Note A)
A.
2
IN1 and IN2 are control inputs referenced to VIO.
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ABSOLUTE MAXIMUM RATINGS (1) (2)
over operating free-air temperature range (unless otherwise noted)
V+
VIO
Supply voltage range
VNC
VNO
VCOM
Analog voltage range (3) (4) (5)
IK
Analog port diode current
INC
INO
ICOM
On-state switch current
VI
Digital input voltage range
IIK
Digital input clamp current (3) (4)
I+
Continuous current through V+
IGND
Continuous current through GND
θJA
Package thermal impedance (6)
Tstg
Storage temperature range
(1)
(2)
(3)
(4)
(5)
(6)
MIN
MAX
–0.5
4.6
V
–0.5
V+ + 0.5
V
VNC, VNO, VCOM < 0, or VNC,
VNO, VCOM > V+ + 0.5
–50
50
VNC, VNO, VCOM = 0 to V+
–64
64
–100
100
–0.5
VIO + 0.5
–50
50
mA
–100
100
mA
(3)
On-state peak switch current
VI < 0, or VI > VIO+ 0.5
–100
YZP pacakge
–65
UNIT
mA
mA
V
100
mA
TBD
°C/W
150
°C
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
The package thermal impedance is calculated in accordance with JESD 51-7.
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ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (1)
V+ = 2.7 V to 3.6 V, VIO = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog
signal range
ON-state
resistance
VCOM,
VNO,
VNC
ron
ON-state
resistance
match
between
channels
Δron
ON-state
resistance
flatness
ron(flat)
NC, NO
OFF leakage
current
NC, NO
ON leakage
current
COM
ON leakage
current
0
0 ≤ (VNO or VNC) ≤ 1.6,
ICOM = –10 mA,
Switch ON,
See Figure 13
VNO or VNC = 1.6 V,
ICOM = –10 mA,
Switch ON,
See Figure 13
25°C
Full
3.5
2.7 V
0 ≤ (VNO or VNC) ≤ 1.6 V, Switch ON,
ICOM = –10 mA,
See Figure 13
INO(OFF),
INC(OFF)
VNO or VNC = 0.3 V,
VCOM = 3 V,
or
VNO or VNC = 3 V,
VCOM = 0.3 V,
INO(ON),
INC(ON)
VNO or VNC = 0.3 V,
VCOM = Open,
or
VNO or VNC = 3 V,
VCOM = Open,
Switch ON,
See Figure 15
ICOM(ON)
VNO or VNC = Open,
VCOM = 0.3 V,
or
VNO or VNC = Open,
VCOM = 3 V,
Switch ON,
See Figure 15
0.05
2.7 V
2
2.7 V
25°C
Switch OFF,
See Figure 14
Full
3.6 V
25°C
Full
25°C
Full
–15
–10
3.6 V
0.2
–30
Ω
nA
10
30
0.2
Ω
5
15
–30
–10
3.6 V
0.1
Ω
3
4
–5
V
0.1
0.2
25°C
Full
5
6
25°C
Full
V+
nA
10
30
nA
Digital Control Inputs (IN1, IN2) (2)
Input logic high
VIH
VIO = 1.65 V to 1.95 V
Full
0.65 × VIO
VIO
V
Input logic low
VIL
VIO = 1.65 V to 1.95 V
Full
0
0.35 × VIO
V
Input leakage
current
IIH, IIL
(1)
(2)
4
VIN = VIO or 0
25°C
Full
3.6 V
–2
–10
0.1
2
10
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at VIO or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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Product Folder Link(s): TS3DS26227
TS3DS26227
www.ti.com ................................................................................................................................................ SCDS224A – JUNE 2008 – REVISED SEPTEMBER 2008
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (continued)
V+ = 2.7 V to 3.6 V, VIO = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
25°C
3.3 V
1
6.5
9
Full
2.7 to
3.6 V
1
25°C
3.3 V
1
Full
2.7 to
3.6 V
1
25°C
3.3 V
0.5
Full
2.7 to
3.6 V
0.5
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF
See Figure 17
Break-beforemake time
tBBM
VNC = VNO = 0.6 V,
RL = 50 Ω,
CL = 35 pF
See Figure 18
VGEN = 0,
RGEN = 0,
CL = 1 nF
See Figure 22
25°C
3.3 V
5.5
pC
Charge
injection
QC
11.5
2
4
5
4
ns
ns
8
9
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = 1.3 V or
GND,
Switch OFF,
See Figure 16
25°C
3.3 V
3.5
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = 1.3 V or
GND, Switch ON,
See Figure 16
25°C
3.3 V
10.5
pF
COM
ON
capacitance
CCOM(ON)
VCOM = 1.3 V or GND,
Switch ON,
See Figure 16
25°C
3.3 V
10.5
pF
Digital input
capacitance
CI
VI = V+ or GND
See Figure 16
25°C
3.3 V
2
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON
See Figure 19
25°C
2.7 V
800
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 200 MHz,
Switch OFF
See Figure 20
25°C
2.7 V
–40
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 200 MHz,
Switch ON
See Figure 21
25°C
2.7 V
–39
dB
Supply
Positive supply
current
I+
VI = V+ or GND,
Switch ON or
OFF
25°C
Logic supply
current
IIO
VI = VIO or GND,
Switch ON or
OFF
25°C
Full
Full
3.6 V
3.6 V
–20
1
–500
–10
–200
20
500
1
10
200
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ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (1)
V+ = 2.3 V to 2.7 V, VIO = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETE
R
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
ON-state
resistance
VCOM, VNO,
VNC
0 ≤ (VNO or VNC) ≤ 1.3,
ICOM = –10 mA,
Switch ON,
See Figure 13
VNO or VNC = 1.3 V,
ICOM = –10 mA,
Switch ON,
See Figure 13
0 ≤ (VNO or VNC) ≤ 1.3 V,
ICOM = –10 mA,
Switch ON,
See Figure 13
INO(OFF),
INC(OFF)
VNO or VNC = 0.2 V,
VCOM = 2.3 V,
or
VNO or VNC = 2.3 V,
VCOM = 0.2 V,
Switch OFF,
See Figure 14
INO(ON),
INC(ON)
VNO or VNC = 0.2 V,
VCOM = Open,
or
VNO or VNC = 2.3 V,
VCOM = Open,
Switch ON,
See Figure 15
ICOM(ON)
VNO or VNC = Open,
VCOM = 0.2 V,
or
VNO or VNC = Open,
VCOM = 2.3 V,
Switch ON,
See Figure 15
ron
ON-state
resistance
match
between
channels
Δron
ON-state
resistance
flatness
ron(flat)
NC, NO
OFF leakage
current
NC, NO
ON leakage
current
COM
ON leakage
current
0
25°C
Full
4
2.3 V
0.05
2.3 V
2.5
2.3 V
25°C
Full
2.7 V
25°C
Full
25°C
Full
–15
–5
2.7 V
0.2
Ω
nA
5
20
0.05
Ω
5
15
–20
–1
2.7 V
0.1
Ω
4
4.5
–5
V
0.1
0.2
25°C
Full
5.5
7
25°C
Full
V+
nA
1
–10
10
nA
Digital Control Inputs (IN1, IN2) (2)
Input logic
high
VIH
VIO = 1.65 V to 1.95 V
Full
0.65 × VIO
VIO
V
Input logic
low
VIL
VIO = 1.65 V to 1.95 V
Full
0
0.35 × VIO
V
Input leakage
current
(1)
(2)
6
IIH, IIL
VIN = VIO or 0
25°C
Full
2.7 V
–1
–10
0.05
1
10
nA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at VIO or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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Product Folder Link(s): TS3DS26227
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ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (continued)
V+ = 2.3 V to 2.7 V, VIO = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETE
R
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
7
11
UNIT
Dynamic
25°C
2.5 V
1
Full
2.3 to
2.7 V
1
25°C
2.5 V
1
Full
2.3 to
2.7 V
1
25°C
2.3 V
1
Full
2.3 to
2.7 V
1
CL = 1 nF
See Figure 22
25°C
2.5 V
4
pC
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF
See Figure 17
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF
See Figure 17
Break-beforemake time
tBBM
VNC = VNO = 0.6 V,
RL = 50 Ω,
CL = 35 pF
See Figure 18
VGEN = 0,
RGEN = 0,
Charge
injection
QC
13
2.5
4.5
5.5
4
ns
ns
8
10
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = 1.6 V or
GND,
Switch OFF,
See Figure 16
25°C
2.5 V
3.5
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = 1.6 V or
GND,
Switch ON,
See Figure 16
25°C
2.5 V
10.5
pF
COM ON
capacitance
CCOM(ON)
VCOM = 1.6 V or GND,
Switch ON,
See Figure 16
25°C
2.5 V
10.5
pF
Digital input
capacitance
CI
VI = V+ or GND
See Figure 16
25°C
2.5 V
2
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON
See Figure 19
25°C
2.3 V
800
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 200 MHz,
Switch OFF
See Figure 20
25°C
2.3 V
–40
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 200 MHz,
Switch ON
See Figure 21
25°C
2.3 V
–39
dB
Supply
Positive
supply
current
I+
VI = V+ or GND,
Switch ON or
OFF
Logic supply
current
IIO
VI = VIO or GND,
Switch ON or
OFF
25°C
Full
25°C
Full
–10
2.7 V
2.7 V
1
–350
–5
–200
10
350
1
5
200
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TYPICAL CHARACTERISTICS
70
80
60
70
60
50
RON (W)
RON (W)
TA = -40°C
40
30
TA = 25°C
40
TA = 25°C
30
20
20
TA = 85°C
10
0
TA = -40°C
50
TA = 85°C
10
0
0
0.5
1
1.5
0
2
1
1.5
2.5
2
3
VIN (V)
VIN (V)
Figure 1. ron vs VI (NC, NO, or COM), V+=2.3 V
Figure 2. ron vs VI (NC, NO, or COM), V+=2.7 V
18
5
16
4
14
85°C NC ON
3
85°C NC OFF
2
1
TA = 85°C
12
I+ (nA)
Leakage (nA)
0.5
25°C NC ON
10
8
6
TA = -40°C
4
0
TA = 25°C
2
-1
-40°C NC ON
-2
-0.5
0
0.5
1
25°C NC OFF
1.5
2
2.5
3
0
3.5
-2
-0.5
4
0
0.5
1
Voltage (V)
Figure 3. Analog Switch Leakage Current vs VI (NC, NO, or
COM), V+=3.6 V
9
1.8 V NC1–COM1
NC2–COM2
NO1–COM1
NO2–COM2
6
4
0
3.0 V
NC1–COM1
NC2–COM2
NO1–COM1
NO2–COM2
-4
-6
4
6
5
4
tOFF
3
2
1
-10
0
0.5
3.5
tON
-8
0
3
7
2
-2
2.5
8
tON/tOFF (ns)
Charge Injection
2
Figure 4. I+ Supply Current vs V+
8
8
1.5
V+ (V)
1
1.5
2.5
2
3
2.3
2.5
2.7
2.9
3.1
VCOM (V)
V+ (V)
Figure 5. Charge Injection vs VCOM
Figure 6. ton/toff vs V+
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3.5
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TYPICAL CHARACTERISTICS (continued)
9
0
Ton
8
-1
7
-2
Gain (dB)
Ton/Toff (ns)
6
5
4
Toff
3
-3
-4
-5
2
-6
1
-7
0
-60
-8
-40
-20
0
20
40
60
80
100
0
1
0
0
-20
-20
-40
-40
-60
100
1000
10000
-60
-80
-80
-100
-100
-120
-120
0
1
10
1000
100
0
10000
1.6
10
1000
100
10000
1.6
1.4
1.4
1.2
1.2
Rise
1
Rise
1
Fall
VOUT (V)
0.8
0.6
0.4
Fall
0.8
0.6
0.4
0.2
0.2
0
0
-0.2
-0.5
1
Frequency (MHz)
Figure 10. Crosstalk vs Frequency, V+=2.5 V
Frequency (MHz)
Figure 9. OFF Isolation vs Frequency, V+=2.5 V
VOUT (V)
10
Frequency (MHz)
Figure 8. Bandwidth, V+=2.5 V
Gain (dB)
Gain (dB)
Temperature (°C)
Figure 7. ton/toff vs Temperature, V+ = 2.3 V
0
0.5
1
1.5
VIN (V)
Figure 11. Threshold Voltage, VIO=1.8 V, V+=2.7 V
2
-0.2
-0.5
0
0.5
1
1.5
2
VIN (V)
Figure 12. Threshold Voltage, VIO=1.8V, V+=3.6 V
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PARAMETER MEASUREMENT INFORMATION
V+
VNO NO
COM
+
VCOM
Channel ON
r on +
VI
ICOM
IN
VCOM * VNO
W
I COM
VI = VIH or VIL
+
GND
Figure 13. ON-State Resistance (ron)
V+
VNO NO
COM
+
VCOM
+
VI
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
IN
+
GND
Figure 14. OFF-State Leakage Current (ICOM(OFF), INC(OFF), ICOM(PWROFF), INC(PWROFF))
V+
VNO NO
COM
+
VI
VCOM
ON-State Leakage Current
Channel ON
VI = VIH or VIL
IN
+
GND
Figure 15. ON-State Leakage Current (ICOM(ON), INC(ON))
10
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PARAMETER MEASUREMENT INFORMATION (continued)
V+
VNO
NO
Capacitance
Meter
VBIAS = V+, VIO, or GND and
VI = VIO or GND
COM
COM
VI
IN
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
VBIAS
GND
Figure 16. Capacitance (CI, CCOM(OFF), CCOM(ON), CNC(OFF), CNC(ON))
V+
NO
VCOM
VI
Logic
Input(1)
VNO
TEST
RL
CL
tON
50 Ω
35 pF
V+
tOFF
50 Ω
35 pF
V+
COM
CL(2)
IN
GND
RL
VIO
Logic
Input
(VI)
50%
50%
0
tON
Switch
Output
(VNO)
(1)
(2)
VCOM
tOFF
90%
90%
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
CL includes probe and jig capacitance.
Figure 17. Turn-On (tON) and Turn-Off Time (tOFF)
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TS3DS26227
SCDS224A – JUNE 2008 – REVISED SEPTEMBER 2008 ................................................................................................................................................ www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
V+
NC or NO
VIO
Logic
Input
(VI)
VNC or VNO
VCOM
50%
0
COM
NC or NO
CL(2)
VI
IN
(2)
90%
90%
tBBM
Logic
Input(1)
(1)
Switch
Output
(VCOM)
RL
VNC or VNO = V+/2
RL = 50 Ω
CL = 35 pF
GND
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
CL includes probe and jig capacitance.
Figure 18. Break-Before-Make Time (tBBM)
V+
Network Analyzer
50 W
VNO
NO
Channel ON: NO to COM
COM
VCOM
VI = VIH or VIL
Source
Signal
Network Analyzer Setup
50 W
VI
+
IN
Source Power = 0 dBm
(632-mV P-P at 50-W load)
GND
DC Bias = 350 mV
Figure 19. Bandwidth (BW)
12
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TS3DS26227
www.ti.com ................................................................................................................................................ SCDS224A – JUNE 2008 – REVISED SEPTEMBER 2008
PARAMETER MEASUREMENT INFORMATION (continued)
V+
Network Analyzer
Channel OFF: NO to COM
50 W
VNO NO
VI = VIO or GND
COM
Source
Signal
VCOM
50 W
Network Analyzer Setup
VI
50 W
Source Power = 0 dBm
(632-mV P-P at 50-W load)
IN
+
GND
DC Bias = 350 mV
Figure 20. OFF Isolation (OISO)
V+
Network Analyzer
50 W
VNO1
Source
Signal
VNO2
NO1
NO2
COM2
50 W
VI
Channel ON: NO to COM
COM1
50 W
Network Analyzer Setup
Source Power = 0 dBm
(632 mV P-P at 50-W load)
IN
+
GND
DC Bias = 350 mV
Figure 21. Crosstalk (XTALK)
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TS3DS26227
SCDS224A – JUNE 2008 – REVISED SEPTEMBER 2008 ................................................................................................................................................ www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
V+
RGEN
VGEN
Logic
Input
(VI)
VIH
OFF
ON
OFF V
IL
NO
COM
+
VCOM
∆VCOM
VCOM
CL(1)
VI
VGEN = 0 to V+
IN
Logic
Input(2)
(1)
(2)
RGEN = 0
CL = 1 nF
QC = CL × ∆VCOM
VI = VIH or VIL
GND
CL includes probe and jig capacitance.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
Figure 22. Charge Injection (QC)
Channel ON: COM to NO
VSOURCE = V+ P-P
VI = (VIO – V+/2) or −V+/2
RL = 600 Ω
fSOURCE = 20 Hz to 20 kHz
CL = 50 pF
V+/2
Audio Analyzer
NO
Source
Signal
COM
CL(1)
600 W
VI
IN
600 W
−V+/2
(1)
CL includes probe and jig capacitance.
Figure 23. Total Harmonic Distortion (THD)
14
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Jul-2008
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
TS3DS26227YZTR
ACTIVE
DSBGA
YZT
Pins Package Eco Plan (2)
Qty
12
3000 Green (RoHS &
no Sb/Br)
Lead/Ball Finish
SNAGCU
MSL Peak Temp (3)
Level-1-260C-UNLIM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
20-Jul-2010
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
TS3DS26227YZTR
Package Package Pins
Type Drawing
SPQ
DSBGA
3000
YZT
12
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
178.0
9.2
Pack Materials-Page 1
1.49
B0
(mm)
K0
(mm)
P1
(mm)
1.99
0.75
4.0
W
Pin1
(mm) Quadrant
8.0
Q2
PACKAGE MATERIALS INFORMATION
www.ti.com
20-Jul-2010
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TS3DS26227YZTR
DSBGA
YZT
12
3000
220.0
220.0
35.0
Pack Materials-Page 2
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