EN25B20
EN25B20
2 Mbit Serial Flash Memory with Boot and Parameter Sectors
FEATURES
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• 2 M-bit Serial Flash
- 2 M-bit/256 K-byte/1024 pages
- 256 bytes per programmable page
•
-
• High performance
- 75MHz clock rate
• Low power consumption
- 5 mA typical active current
- 1 μA typical power down current
High performance program/erase speed
Byte program time: 7µs typical
Page program time: 1.5ms typical
Sector erase time: 300 to 800ms typical
Chip erase time: 3 Seconds typical
• Minimum 100K endurance cycle
• Flexible Sector Architecture:
- Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one
32-Kbyte, and three 64-Kbyte sectors
•
-
Package Options
8 pins SOP 150mil body width
8 contact VDFN
All Pb-free packages are RoHS compliant
• Commercial and industrial temperature Range
GENERAL DESCRIPTION
The EN25B20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25B20 has eight sectors including three sectors of 64KB, one sector of 32KB, one sector of
16KB, one sector of 8KB and two sectors of 4KB. This device is designed to allow either single
Sector at a time or full chip erase operation. The EN25B20 can protect boot code stored in the small
sectors for either bottom or top boot configurations. The device can sustain a minimum of 100K
program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Figure.1 CONNECTION DIAGRAMS
8 - LEAD SOP
8 - CONTACT VDFN
Figure 2. BLOCK DIAGRAM
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
SIGNAL DESCRIPTION
Serial Data Input (DI)
The SPI Serial Data Input (DI) pin provides a means for instructions, addresses and data to be
serially written to (shifted into) the device. Data is latched on the rising edge of the Serial Clock (CLK)
input pin.
Serial Data Output (DO)
The SPI Serial Data Output (DO) pin provides a means for data and status to be serially read from
(shifted out of) the device. Data is shifted out on the falling edge of the Serial Clock (CLK) input pin.
Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See
SPI Mode")
Chip Select (CS#)
The SPI Chip Select (CS#) pin enables and disables device operation. When CS# is high the device
is deselected and the Serial Data Output (DO) pin is at high impedance. When deselected, the
devices power consumption will be at standby levels unless an internal erase, program or status
register cycle is in progress. When CS# is brought low the device will be selected, power
consumption will increase to active levels and instructions can be written to and data read from the
device. After power-up, CS# must transition from high to low before a new instruction will be
accepted.
Hold (HOLD#)
The HOLD pin allows the device to be paused while it is actively selected. When HOLD is brought
low, while CS# is low, the DO pin will be at high impedance and signals on the DI and CLK pins will
be ignored (don’t care). The hold function can be useful when multiple devices are sharing the same
SPI signals.
Write Protect (WP#)
The Write Protect (WP#) pin can be used to prevent the Status Register from being written. Used
in conjunction with the Status Register’s Block Protect (BP0, BP1and BP2) bits and Status
Register Protect (SRP) bits, a portion or the entire memory array can be hardware protected.
Table 1. PIN Names
Symbol
Pin Name
CLK
Serial Clock Input
DI
Serial Data Input
DO
Serial Data Output
CS#
Chip Enable
WP#
Write Protect
HOLD#
Hold Input
Vcc
Supply Voltage (2.7-3.6V)
Vss
Ground
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
MEMORY ORGANIZATION
The memory is organized as:
z
262,144 bytes
z
Flexible Sector Architecture
Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one 32-Kbyte, and three 64-Kbyte sectors
z
z
Bottom or top boot configurations
1024 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector or
Bulk Erasable but not Page Erasable.
Table 2a. Bottom Boot Block Sector Architecture
Sector
SECTOR SIZE (KByte)
Address range
7
64
30000h – 3FFFFh
6
64
20000h – 2FFFFh
5
64
10000h – 1FFFFh
4
32
08000h – 0FFFFh
3
16
04000h – 07FFFh
2
8
02000h – 03FFFh
1
4
01000h – 01FFFh
0
4
00000h – 00FFFh
Table 2b. Top Boot Block Sector Architecture (Special order)
Sector
SECTOR SIZE (KByte)
Address range
7
4
3F000h – 3FFFFh
6
4
3E000h – 3EFFFh
5
8
3C000h – 3DFFFh
4
16
38000h – 3BFFFh
3
32
30000h – 37FFFh
2
64
20000h – 2FFFFh
1
64
10000h – 1FFFFh
0
64
00000h – 0FFFFh
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
OPERATING FEATURES
SPI Modes
The EN25B20 is accessed through an SPI compatible bus consisting of four signals: Serial Clock (CLK),
Chip Select (CS#), Serial Data Input (DI) and Serial Data Output (DO). Both SPI bus operation Modes 0
(0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and Mode 3, as shown in Figure
3, concerns the normal state of the SCK signal when the SPI bus master is in standby and data is not
being transferred to the Serial Flash. For Mode 0 the SCK signal is normally low. For Mode 3 the SCK
signal is normally high. In either case data input on the DI pin is sampled on the rising edge of the SCK.
Data output on the DO pin is clocked out on the falling edge of SCK.
Figure 3. SPI Modes
Page Programming
To program one data byte, two instructions are required: Write Enable (WREN), which is one byte, and a
Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the internal
Program cycle (of duration tPP).
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be programmed at
a time (changing bits from 1 to 0), provided that they lie in consecutive addresses on the same page of
memory.
Sector Erase and Bulk Erase
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be applied, the
bytes of memory need to have been erased to all 1s (FFh). This can be achieved either a sector at a time,
using the Sector Erase (SE) instruction, or throughout the entire memory, using the Bulk Erase (BE)
instruction. This starts an internal Erase cycle (of duration tSE or tBE). The Erase instruction must be
preceded by a Write Enable (WREN) instruction.
Polling During a Write, Program or Erase Cycle
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase (SE or BE)
can be achieved by not waiting for the worst case delay (tW, tPP, tSE, or tBE). The Write In Progress
(WIP) bit is provided in the Status Register so that the application program can monitor its value, polling it
to establish when the previous Write cycle, Program cycle or Erase cycle is complete.
Active Power, Stand-by Power and Deep Power-Down Modes
When Chip Select (CS#) is Low, the device is enabled, and in the Active Power mode. When Chip Select
(CS#) is High, the device is disabled, but could remain in the Active Power mode until all internal cycles
have completed (Program, Erase, Write Status Register). The device then goes in to the Stand-by Power
mode. The device consumption drops to ICC1.
The Deep Power-down mode is entered when the specific instruction (the Enter Deep Power-down Mode
(DP) instruction) is executed. The device consumption drops further to ICC2. The device remains in this
mode until another specific instruction (the Release from Deep Power-down Mode and Read Device ID
(RDI) instruction) is executed.
All other instructions are ignored while the device is in the Deep Power-down mode. This can be used as
an extra software protection mechanism, when the device is not in active use, to protect the device from
inadvertent Write, Program or Erase instructions.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Status Register.The Status Register contains a number of status and control bits that can be read or set
(as appropriate) by specific instructions.
BUSY bit. The BUSY bit indicates whether the memory is busy with a Write Status Register, Program or
Erase cycle.
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
BP2, BP1, BP0 bits. The Block Protect (BP2, BP1, BP0) bits are non-volatile. They define the size of the
area to be software protected against Program and Erase instructions.
SRP bit. The Status Register Protect (SRP) bit is operated in conjunction with the Write Protect (WP#)
signal. The Status Register Protect (SRP) bit and Write Protect (WP#) signal allow the device to be put in
the Hardware Protected mode. In this mode, the non-volatile bits of the Status Register (SRP, BP2, BP1,
BP0) become read-only bits.
Write Protection
Applications that use non-volatile memory must take into consideration the possibility of noise and other
adverse system conditions that may compromise data integrity. To address this concern the EN25B20
provides the following data protection mechanisms:
z
Power-On Reset and an internal timer (tPUW) can provide protection against inadvertent changes
while the power supply is outside the operating specification.
z
Program, Erase and Write Status Register instructions are checked that they consist of a number of
clock pulses that is a multiple of eight, before they are accepted for execution.
z
All instructions that modify data must be preceded by a Write Enable (WREN) instruction to set the
Write Enable Latch (WEL) bit . This bit is returned to its reset state by the following events:
– Power-up
– Write Disable (WRDI) instruction completion or Write Status Register (WRSR) instruction
completion or Page Program (PP) instruction completion or Sector Erase (SE)instruction
completion or Bulk Erase (BE) instruction completion or
z
The Block Protect (BP2, BP1, BP0) bits allow part of the memory to be configured as read-only. This
is the Software Protected Mode (SPM).
z
The Write Protect (WP#) signal allows the Block Protect (BP2, BP1, BP0) bits and Status Register
Protect (SRP) bit to be protected. This is the Hardware Protected Mode (HPM).
z
In addition to the low power consumption feature, the Deep Power-down mode offers extra software
protection from inadvertent Write, Program and Erase instructions, as all instructions are ignored
except one particular instruction (the Release from Deep Power-down instruction).
Table 3a. Protected Area Sizes- Bottom Boot Sector Organization
Status Register
Content
BP2
BP1
BP0
Bit
Bit
Bit
1
1
1
1
1
0
1
0
1
1
0
0
0
1
1
0
1
0
0
0
1
All
Sector 0 to 5
Sector 0 to 4
Sector 0 to 3
Sector 0 to 2
Sector 0 to 1
Sector 0
000000h-03FFFFh
000000h-01FFFFh
000000h-00FFFFh
000000h-007FFFh
000000h-003FFFh
000000h-001FFFh
000000h-000FFFh
256KB
128KB
64KB
32KB
16KB
8KB
4KB
All
Lower 1/2
Lower 1/4
Lower 1/8
Lower 1/16
Lower 1/32
Lower 1/64
0
None
None
None
None
0
0
Memory Content
Addresses
Protect Sectors
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
6
Density(KB)
Portion
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Table 3b. Protected Area Sizes- Top Boot Sector Organization
Status Register
Content
BP2
BP1
BP0
Bit
Bit
Bit
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Memory Content
Protect Sectors
Addresses
Density(KB)
Portion
None
Sector 7
Sector 6 to 7
Sector 5 to 7
Sector 4 to 7
Sector 3 to 7
Sector 2 to 7
All
None
03F000h-03FFFFh
03E000h-03FFFFh
03C000h-03FFFFh
038000h-03FFFFh
030000h-03FFFFh
020000h-03FFFFh
000000h-03FFFFh
None
4KB
8KB
16KB
32KB
64KB
128KB
256KB
None
Upper 1/64
Upper 1/32
Upper 1/16
Upper 1/8
Upper 1/4
Upper 1/2
All
Hold Function
The Hold (HOLD) signal is used to pause any serial communications with the device without resetting the
clocking sequence. However, taking this signal Low does not terminate any Write Status Register,
Program or Erase cycle that is currently in progress.
To enter the Hold condition, the device must be selected, with Chip Select (CS#) Low. The Hold condition
starts on the falling edge of the Hold (HOLD) signal, provided that this coincides with Serial Clock (CLK)
being Low (as shown in Figure 4.).
The Hold condition ends on the rising edge of the Hold (HOLD) signal, provided that this coincides with
Serial Clock (CLK) being Low.
If the falling edge does not coincide with Serial Clock (CLK) being Low, the Hold condition starts after
Serial Clock (CLK) next goes Low. Similarly, if the rising edge does not coincide with Serial Clock (CLK)
being Low, the Hold condition ends after Serial Clock (CLK) next goes Low. (This is shown in Figure 4.).
During the Hold condition, the Serial Data Output (DO) is high impedance, and Serial Data Input (DI) and
Serial Clock (CLK) are Don’t Care.
Normally, the device is kept selected, with Chip Select (CS#) driven Low, for the whole duration of the
Hold condition. This is to ensure that the state of the internal logic remains unchanged from the moment
of entering the Hold condition.
If Chip Select (CS#) goes High while the device is in the Hold condition, this has the effect of resetting the
internal logic of the device. To restart communication with the device, it is necessary to drive Hold (HOLD)
High, and then to drive Chip Select (CS#) Low. This prevents the device from going back to the Hold
condition.
Figure 4. Hold Condition Waveform
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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Rev. C, Issue Date: 2006/12/26
EN25B20
INSTRUCTIONS
All instructions, addresses and data are shifted in and out of the device, most significant bit first. Serial
Data Input (DI) is sampled on the first rising edge of Serial Clock (CLK) after Chip Select (CS#) is driven
Low. Then, the one-byte instruction code must be shifted in to the device, most significant bit first, on
Serial Data Input (DI), each bit being latched on the rising edges of Serial Clock (CLK).
The instruction set is listed in Table 4. Every instruction sequence starts with a one-byte instruction code.
Depending on the instruction, this might be followed by address bytes, or by data bytes, or by both or
none. Chip Select (CS#) must be driven High after the last bit of the instruction sequence has been shifted
in. In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read), Read
Status Register (RDSR) or Release from Deep Power-down, and Read Device ID (RDI) instruction, the
shifted-in instruction sequence is followed by a data-out sequence. Chip Select (CS#) can be driven High
after any bit of the data-out sequence is being shifted out.
In the case of a Page Program (PP), Sector Erase (SE), Bulk Erase (BE), Write Status Register (WRSR),
Write Enable (WREN), Write Disable (WRDI) or Deep Power-down (DP) instruction, Chip Select (CS#)
must be driven High exactly at a byte boundary, otherwise the instruction is rejected, and is not executed.
That is, Chip Select (CS#) must driven High when the number of clock pulses after Chip Select (CS#)
being driven Low is an exact multiple of eight. For Page Program, if at any time the input byte is not a full
byte, nothing will happen and WEL will not be reset.
In the case of multi-byte commands of Page Program (PP), and Release from Deep Power Down
(RES ) minimum number of bytes specified has to be given, without which, the command will be
ignored.
In the case of Page Program, if the number of byte after the command is less than 4 (at least 1 data
byte), it will be ignored too. In the case of SE, exact 24-bit address is a must, any less or more will
cause the command to be ignored.
All attempts to access the memory array during a Write Status Register cycle, Program cycle or Erase
cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues
unaffected.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Table 4. Instruction Set
Instruction Name
Byte 1
Code
Write Enable
06h
Write Disable
Read Status
Register
Write Status
Register
Read Data
04h
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
continuous
(2)
05h
(S7-S0)(1)
01h
S7-S0
03h
A23-A16
A15-A8
A7-A0
(D7-D0)
(Next byte)
Fast Read
0Bh
A23-A16
A15-A8
A7-A0
dummy
(D7-D0)
Page Program
Sector Erase
02h
D8h
A23-A16
A15-A8
A7-A0
D7-D0
(Next byte)
A23-A16
A15-A8
A7-A0
Bulk Erase
C7h
Deep Power-down
B9h
Release from Deep
Power-down, and
read Device ID
Release from Deep
Power-down
Manufacturer/
Device ID
Read Identification
n-Bytes
continuous
(Next Byte)
continuous
continuous
(4)
dummy
dummy
dummy
(ID7-ID0)
dummy
dummy
00h
(M7-M0)
(M7-M0)
(ID15-ID8)
ABh
90h
9Fh
(ID7-ID0)
(5)
(ID7-ID0)
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being read from
the device on the DO pin.
2. The Status Register contents will repeat continuously until CS# terminate the instruction.
3. All sectors may use any address within the sector.
4. The Device ID will repeat continuously until CS# terminate the instruction.
5. The Manufacturer ID and Device ID bytes will repeat continuously until CS# terminate the instruction.
00h on Byte 4 starts with MID and alternate with DID, 01h on Byte 4 starts with DID and alternate with MID.
Table 5. Manufacturer and Device Identification
Boot Type
OP Code
(M7-M0)
(ID15-ID0)
ABh
EN25B20(Bottom Boot)
31h
90h
1Ch
9Fh
1Ch
31h
2012h
ABh
EN25B20T(Top Boot)
41h
90h
1Ch
9Fh
1Ch
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
(ID7-ID0)
9
41h
2012h
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Write Enable (WREN) (06h)
The Write Enable (WREN) instruction (Figure 5) sets the Write Enable Latch (WEL) bit. The Write Enable
Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Bulk Erase (BE) and
Write Status Register (WRSR) instruction.
The Write Enable (WREN) instruction is entered by driving Chip Select (CS#) Low, sending the instruction
code, and then driving Chip Select (CS#) High.
Write Disable (WRDI) (04h)
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register to
a 0. The Write Disable instruction is entered by driving Chip Select (CS#) low, shifting the instruction code
“04h” into the DI pin and then driving Chip Select (CS#) high. Note that the WEL bit is automatically reset
after Power-up and upon completion of the Write Status Register, Page Program, Sector Erase, and Bulk
Erase instructions.
Read Status Register (RDSR) (05h)
The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status Register
may be read at any time, even while a Program, Erase or Write Status Register cycle is in progress.
When one of these cycles is in progress, it is recommended to check the Write In Progress (WIP) bit
before sending a new instruction to the device. It is also possible to read the Status Register continuously,
as shown in Figure 7.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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Rev. C, Issue Date: 2006/12/26
EN25B20
Table 6. Status Register Bit Locations
The status and control bits of the Status Register are as follows:
BUSY bit. The BUSY bit indicates whether the memory is busy with a Write Status Register, Program or
Erase cycle. When set to 1, such a cycle is in progress, when reset to 0 no such cycle is in progress.
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When
set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and
no Write Status Register, Program or Erase instruction is accepted.
BP2, BP1, BP0 bits. The Block Protect (BP2, BP1, BP0) bits are non-volatile. They define the size of the
area to be software protected against Program and Erase instructions. These bits are written with the
Write Status Register (WRSR) instruction. When one or both of the Block Protect (BP2, BP1, BP0) bits is
set to 1, the relevant memory area (as defined in Table 3.) becomes protected against Page Program (PP)
and Sector Erase (SE) instructions. The Block Protect (BP2, BP1, BP0) bits can be written provided that
the Hardware Protected mode has not been set. The Bulk Erase (BE) instruction is executed if, and only if,
both Block Protect (BP2, BP1, BP0) bits are 0.
Reserved bit. Status register bit locations 5 and 6 are reserved for future use. Current devices will read 0
for these bit locations. It is recommended to mask out the reserved bit when testing the Status Register.
Doing this will ensure compatibility with future devices.
SRP bit. The Status Register Protect (SRP) bit is operated in conjunction with the Write Protect (WP#)
signal. The Status Register Write Protect (SRP) bit and Write Protect (WP#) signal allow the device to be
put in the Hardware Protected mode (when the Status Register Protect (SRP) bit is set to 1, and Write
Protect (WP#) is driven Low). In this mode, the non-volatile bits of the Status Register (SRP, BP2, BP1,
BP0) become read-only bits and the Write Status Register (WRSR) instruction is no longer accepted for
execution.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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Rev. C, Issue Date: 2006/12/26
EN25B20
Write Status Register (WRSR) (01h)
The Write Status Register (WRSR) instruction allows new values to be written to the Status Register.
Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After
the Write Enable (WREN) instruction has been decoded and executed, the device sets the Write Enable
Latch (WEL).
The Write Status Register (WRSR) instruction is entered by driving Chip Select (CS#) Low, followed by
the instruction code and the data byte on Serial Data Input (DI).
The instruction sequence is shown in Figure 8.. The Write Status Register (WRSR) instruction has no
effect on S6, S5, S1 and S0 of the Status Register. S6 and S5 are always read as 0. Chip Select (CS#)
must be driven High after the eighth bit of the data byte has been latched in. If not, the Write Status
Register (WRSR) instruction is not executed. As soon as Chip Select (CS#) is driven High, the self-timed
Write Status Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in
progress, the Status Register may still be read to check the value of the Write In Progress (WIP) bit. The
Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is
completed. When the cycle is completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) instruction allows the user to change the values of the Block Protect
(BP2, BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as defined in Table
3.. The Write Status Register (WRSR) instruction also allows the user to set or reset the Status Register
Protect (SRP) bit in accordance with the Write Protect (WP#) signal. The Status Register Protect (SRP)
bit and Write Protect (WP#) signal allow the device to be put in the Hardware Protected Mode (HPM). The
Write Status Register (WRSR) instruction is not executed once the Hardware Protected Mode (HPM) is
entered.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Read Data Bytes (READ) (03h)
The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data
Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the
rising edge of Serial Clock (CLK). Then the memory contents, at that address, is shifted out on Serial Data
Output (DO), each bit being shifted out, at a maximum frequency fR, during the falling edge of Serial Clock
(CLK).
The instruction sequence is shown in Figure 9.. The first byte addressed can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out. The
whole memory can, therefore, be read with a single Read Data Bytes (READ) instruction. When the
highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be
continued indefinitely.
The Read Data Bytes (READ) instruction is terminated by driving Chip Select (CS#) High. Chip Select
(CS#) can be driven High at any time during data output. Any Read Data Bytes (READ) instruction, while
an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is
in progress.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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Rev. C, Issue Date: 2006/12/26
EN25B20
Read Data Bytes at Higher Speed (FAST_READ) (0Bh)
The device is first selected by driving Chip Select (CS#) Low. The instruction code for the Read Data
Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-A0) and a dummy
byte, each bit being latched-in during the rising edge of Serial Clock (CLK). Then the memory contents, at
that address, is shifted out on Serial Data Output (DO), each bit being shifted out, at a maximum
frequency FR, during the falling edge of Serial Clock (CLK).
The instruction sequence is shown in Figure 10.. The first byte addressed can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out. The
whole memory can, therefore, be read with a single Read Data Bytes at Higher Speed (FAST_READ)
instruction. When the highest address is reached, the address counter rolls over to 000000h, allowing the
read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving Chip Select
(CS#) High. Chip Select (CS#) can be driven High at any time during data output. Any Read Data Bytes at
Higher Speed (FAST_READ) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
14
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Page Program (PP) (02h)
The Page Program (PP) instruction allows bytes to be programmed in the memory. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction code, three address bytes and at least one data byte on Serial Data Input (DI). If the 8 least
significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the
current page are programmed from the start address of the same page (from the address whose 8 least
significant bits (A7-A0) are all zero). Chip Select (CS#) must be driven Low for the entire duration of the
sequence.
The instruction sequence is shown in Figure 11. If more than 256 bytes are sent to the device, previously
latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within
the same page. If less than 256 Data bytes are sent to device, they are correctly programmed at the
requested addresses without having any effects on the other bytes of the same page.
Chip Select (CS#) must be driven High after the eighth bit of the last data byte has been latched in,
otherwise the Page Program (PP) instruction is not executed.
As soon as Chip Select (CS#) is driven High, the self-timed Page Program cycle (whose duration is tPP) is
initiated. While the Page Program cycle is in progress, the Status Register may be read to check the value
of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page
Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the
Write Enable Latch (WEL) bit is reset.
A Page Program (PP) instruction applied to a page which is protected by the Block Protect (BP2, BP1,
BP0) bits (see Table 3.a and Table 3.b) is not executed.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
15
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Sector Erase (SE) (D8h)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it can be
accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write
Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction code, and three address bytes on Serial Data Input (DI). Any address inside the Sector (see
Table 2.a and Table 2.b) is a valid address for the Sector Erase (SE) instruction. Chip Select (CS#)
must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 12.. Chip Select (CS#) must be driven High after the eighth
bit of the last address byte has been latched in, otherwise the Sector Erase (SE) instruction is not
executed. As soon as Chip Select (CS#) is driven High, the self-timed Sector Erase cycle (whose duration
is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check
the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed
Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed,
the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a page which is protected by the Block Protect (BP2, BP1, BP0)
bits (see Table 3.a and Table 3.b) is not executed.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
16
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Bulk Erase (BE) (C7h)
The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction
code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the entire duration of the
sequence.
The instruction sequence is shown in Figure 13.. Chip Select (CS#) must be driven High after the eighth
bit of the instruction code has been latched in, otherwise the Bulk Erase instruction is not executed. As
soon as Chip Select (CS#) is driven High, the self-timed Bulk Erase cycle (whose duration is tBE) is
initiated. While the Bulk Erase cycle is in progress, the Status Register may be read to check the value of
the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk Erase cycle,
and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable
Latch (WEL) bit is reset.
The Bulk Erase (BE) instruction is executed only if all Block Protect (BP2, BP1, BP0) bits are 0. The Bulk
Erase (BE) instruction is ignored if one, or more, sectors are protected.
Deep Power-down (DP) (B9h)
Executing the Deep Power-down (DP) instruction is the only way to put the device in the lowest consumption mode (the Deep Power-down mode). It can also be used as an extra software protection
mechanism, while the device is not in active use, since in this mode, the device ignores all Write, Program
and Erase instructions.
Driving Chip Select (CS#) High deselects the device, and puts the device in the Standby mode (if there is
no internal cycle currently in progress). But this mode is not the Deep Power-down mode. The Deep
Power-down mode can only be entered by executing the Deep Power-down (DP) instruction, to reduce
the standby current (from ICC1 to ICC2, as specified in Table 8.).
Once the device has entered the Deep Power-down mode, all instructions are ignored except the Release
from Deep Power-down and Read Device ID (RDI) instruction. This releases the device from this mode.
The Release from Deep Power-down and Read Device ID (RDI) instruction also allows the Device ID of
the device to be output on Serial Data Output (DO).
The Deep Power-down mode automatically stops at Power-down, and the device always Powers-up in the
Standby mode. The Deep Power-down (DP) instruction is entered by driving Chip Select (CS#) Low,
followed by the instruction code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in Figure 14..Chip Select (CS#) must be driven High after the eighth bit
of the instruction code has been latched in, otherwise the Deep Power-down (DP) instruction is not
executed. As soon as Chip Select (CS#) is driven High, it requires a delay of tDP before the supply current
is reduced to ICC2 and the Deep Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in progress, is rejected
without having any effects on the cycle that is in progress.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
17
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Release from Deep Power-down and Read Device ID (RDI)
Once the device has entered the Deep Power-down mode, all instructions are ignored except the Release
from Deep Power-down and Read Device ID (RDI) instruction. Executing this instruction takes the device
out of the Deep Power-down mode.
When used only to release the device from the power-down state, the instruction is issued by driving the
CS# pin low, shifting the instruction code “ABh” and driving CS# high as shown in Figure 15. After the
time duration of tRES1 (See AC Characteristics) the device will resume normal operation and other
instructions will be accepted. The CS# pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the CS# pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID
bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in Figure
16. The Device ID value for the EN25B20 are listed in Table 5. The Device ID can be read continuously.
The instruction is completed by driving CS# high.
When Chip Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was
not previously in the Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If
the device was previously in the Deep Pow-er-down mode, though, the transition to the Standby Power
mode is delayed by tRES2, and Chip Select (CS#) must remain High for at least tRES2 (max), as specified
in Table 10. Once in the Stand-by Power mode, the device waits to be selected, so that it can receive,
decode and execute instructions.
Except while an Erase, Program or Write Status Register cycle is in progress, the Release from Deep
Power-down and Read Device ID (RDI) instruction always provides access to the 8bit Device ID of the
device, and can be applied even if the Deep Power-down mode has not been entered.
Any Release from Deep Power-down and Read Device ID (RDI) instruction while an Erase, Program or
Write Status Register cycle is in progress, is not decoded, and has no effect on the cycle that is in
progress.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
18
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Read Manufacturer / Device ID (90h)
The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down / Device
ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID.
The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device ID
instruction. The instruction is initiated by driving the CS# pin low and shifting the instruction code “90h”
followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Eon (1Ch) and the
Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in
Figure 17. The Device ID values for the EN25B20 are listed in Table 5. If the 24-bit address is initially set
to 000001h the Device ID will be read first
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
19
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Read Identification (RDID)(9Fh)
The Read Identification (RDID) instruction allows the 8-bit manufacturer identification to be read, followed
by two bytes of device identification. The device identification indicates the memory type in the first byte ,
and the memory capacity of the device in the second byte .
Any Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is not decoded,
and has no effect on the cycle that is in progress. The Read Identification (RDID) instruction should not be
issued while the device is in Deep Power down mode.
The device is first selected by driving Chip Select Low. Then, the 8-bit instruction code for the instruction
is shifted in. This is followed by the 24-bit device identification, stored in the memory, being shifted out on
Serial Data Output , each bit being shifted out during the falling edge of Serial Clock . The instruction
sequence is shown in Figure 18. The Read Identification (RDID) instruction is terminated by driving Chip
Select High at any time during data output.
When Chip Select is driven High, the device is put in the Standby Power mode. Once in the Standby
Power mode, the device waits to be selected, so that it can receive, decode and execute instructions.
Figure 18. Read Identification (RDID)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
20
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Power-up Timing
Figure 19. Power-up Timing
Table 7. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min.
Max.
Unit
tVSL(1)
VCC(min) to CS# low
10
tPUW(1)
Time delay to Write instruction
1
10
ms
Write Inhibit Voltage
1
2
V
VWI(1)
µs
Note:
1.The parameters are characterized only.
INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The
Status Register contains 00h (all Status Register bits are 0).
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
21
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Table 8. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
ILI
Input Leakage Current
±2
µA
ILO
Output Leakage Current
±2
µA
ICC1
Standby Current
20
µA
ICC2
Deep Power-down Current
20
µA
20
mA
15
mA
12
mA
ICC3
Operating Current (READ)
ICC4
Operating Current (PP)
ICC5
Operating Current (WRSR)
ICC6
CS# = VCC, VIN = VSS or VCC
CS# = VCC, VIN = VSS or VCC
CLK = 0.1 VCC / 0.9 VCC at
75MHz, Q = open
CLK = 0.1 VCC / 0.9 VCC at
50MHz, Q = open
CLK = 0.1 VCC / 0.9 VCC at
33MHz, Q = open
CS# = VCC
15
mA
15
mA
Operating Current (SE)
CS# = VCC
CS# = VCC
15
mA
ICC7
Operating Current (BE)
CS# = VCC
15
mA
VIL
Input Low Voltage
– 0.5
0.2 VCC
V
VIH
Input High Voltage
0.7VCC
VCC+0.4
V
VOL
Output Low Voltage
IOL = 1.6 mA
0.4
V
VOH
Output High Voltage
IOH = –100 µA
VCC-0.2
V
Table 9. AC Measurement Conditions
Symbol
CL
Parameter
Min.
Load Capacitance
Max.
30
Input Rise and Fall Times
Unit
pF
5
ns
Input Pulse Voltages
0.2VCC to 0.8VCC
V
Input Timing Reference Voltages
0.3VCC to 0.7VCC
V
VCC / 2
V
Output Timing Reference Voltages
Figure 20. AC Measurement I/O Waveform
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
22
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Table 10. 75MHz AC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol
Alt
fC
FR
Parameter
Serial Clock Frequency for:
FAST_READ, PP, SE, BE, DP, RES, WREN,
WRDI, RDSR, WRSR
Min
Typ
Max
Unit
D.C.
75
MHz
D.C.
50
MHz
fR
Serial Clock Frequency READ instruction
tCLH 1
Serial Clock High Time
6
ns
tCLL1
Serial Clock Low Time
6
ns
Serial Clock Rise Time (Slew Rate)
0.1
V / ns
Serial Clock Fall Time (Slew Rate)
0.1
V / ns
CS# Active Setup Time
5
ns
tCHSH
CS# Active Hold Time
5
ns
tSHCH
CS# Not Active Setup Time
5
ns
tCHSL
CS# Not Active Hold Time
5
ns
100
ns
tCLCH
2
tCHCL 2
tSLCH
tCSS
tSHSL
tCSH
CS# High Time
tSHQZ 2
tDIS
Output Disable Time
tCLQX
tHO
Output Hold Time
0
ns
tDVCH
tDSU
Data In Setup Time
2
ns
tCHDX
tDH
Data In Hold Time
5
ns
tHLCH
HOLD# Low Setup Time ( relative to SCK )
5
ns
tHHCH
HOLD# High Setup Time ( relative to SCK )
5
ns
tCHHH
HOLD# Low Hold Time ( relative to SCK )
5
ns
tCHHL
HOLD# High Hold Time ( relative to SCK )
5
ns
6
ns
tHLQZ
2
tHZ
HOLD# Low to High-Z Output
6
ns
tHHQZ
2
tLZ
HOLD# High to Low-Z Output
6
ns
tV
Output Valid from SCK
6
ns
tCLQV
tWHSL3
Write Protect Setup Time before CS# Low
20
ns
tSHWL3
Write Protect Hold Time after CS# High
100
ns
tDP 2
CS# High to Deep Power-down Mode
tRES1 2
tRES2 2
CS# High to Standby Mode without Electronic
Signature read
CS# High to Standby Mode with Electronic
Signature read
tW
Write Status Register Cycle Time
tPP
3
µs
3
µs
1.8
µs
10
15
ms
Page Programming Time
1.5
5
ms
tSE
Sector Erase Time 64KB sectors
Sector Erase Time 16KB sectors
Sector Erase Time 4KB sectors
0.8
0.5
0.3
2
1
0.6
s
tBE
Bulk Erase Time
3
6
s
Note: 1. TSCKH + TSCKL must be greater than or equal to 1/ FCLK
2. Value guaranteed by characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write status Register instruction when Status Register Protect Bit is set at 1.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
23
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Table 11. 50MHz AC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol
Alt
fC
FR
Parameter
Serial Clock Frequency for:
FAST_READ, PP, SE, BE, DP, RES, WREN,
WRDI, RDSR, WRSR
Min
Typ
Max
Unit
D.C.
50
MHz
D.C.
33
MHz
fR
Serial Clock Frequency READ instruction
tCLH 1
Serial Clock High Time
9
ns
tCLL1
Serial Clock Low Time
9
ns
Serial Clock Rise Time (Slew Rate)
0.1
V / ns
Serial Clock Fall Time (Slew Rate)
0.1
V / ns
CS# Active Setup Time
5
ns
tCHSH
CS# Active Hold Time
5
ns
tSHCH
CS# Not Active Setup Time
5
ns
tCHSL
CS# Not Active Hold Time
5
ns
100
ns
tCLCH
2
tCHCL 2
tSLCH
tCSS
tSHSL
tCSH
CS# High Time
tSHQZ 2
tDIS
Output Disable Time
tCLQX
tHO
Output Hold Time
0
ns
tDVCH
tDSU
Data In Setup Time
2
ns
tCHDX
tDH
Data In Hold Time
5
ns
tHLCH
HOLD# Low Setup Time ( relative to SCK )
5
ns
tHHCH
HOLD# High Setup Time ( relative to SCK )
5
ns
tCHHH
HOLD# Low Hold Time ( relative to SCK )
5
ns
tCHHL
HOLD# High Hold Time ( relative to SCK )
5
ns
9
ns
tHLQZ
2
tHZ
HOLD# Low to High-Z Output
9
ns
tHHQZ
2
tLZ
HOLD# High to Low-Z Output
9
ns
tV
Output Valid from SCK
9
ns
tCLQV
tWHSL3
Write Protect Setup Time before CS# Low
20
ns
tSHWL3
Write Protect Hold Time after CS# High
100
ns
tDP 2
CS# High to Deep Power-down Mode
tRES1 2
tRES2 2
CS# High to Standby Mode without Electronic
Signature read
CS# High to Standby Mode with Electronic
Signature read
tW
Write Status Register Cycle Time
tPP
3
µs
3
µs
1.8
µs
10
15
ms
Page Programming Time
1.5
5
ms
tSE
Sector Erase Time 64KB sectors
Sector Erase Time 16KB sectors
Sector Erase Time 4KB sectors
0.8
0.5
0.3
2
1
0.6
s
tBE
Bulk Erase Time
3
6
s
Note: 1. TSCKH + TSCKL must be greater than or equal to 1/ FCLK
2. Value guaranteed by characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write status Register instruction when Status Register Protect Bit is set at 1.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
24
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Figure 21. Serial Output Timing
Figure 22. Input Timing
Figure 23. Hold Timing
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
25
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
ABSOLUTE MAXIMUM RATINGS
Stresses above the values so mentioned above may cause permanent damage to the device. These
values are for a stress rating only and do not imply that the device should be operated at conditions up to
or above these values. Exposure of the device to the maximum rating values for extended periods of time
may adversely affect the device reliability.
Parameter
Value
Unit
Storage Temperature
-65 to +125
°C
Plastic Packages
-65 to +125
°C
Output Short Circuit Current1
200
mA
Input and Output Voltage (with respect to
ground) 2
-0.5 to +4.0
V
Vcc
-0.5 to +4.0
V
Notes:
1.
No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
2.
Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot Vss to –1.0V for
periods of up to 50ns and to –2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O
pins is Vcc + 0.5 V. During voltage transitions, outputs may overshoot to Vcc + 1.5 V for periods up to 20ns. See figure
below.
RECOMMENDED OPERATING RANGES 1
Parameter
Ambient Operating Temperature
Commercial Devices
Industrial Devices
Value
Unit
0 to 70
-40 to 85
°C
Regulated: 3.0 to 3.6
Operating Supply Voltage
Vcc
V
Full: 2.7 to 3.6
Notes:
1. Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed.
Vcc
+1.5V
Maximum Negative Overshoot Waveform
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Maximum Positive Overshoot Waveform
26
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Table 12. DATA RETENTION and ENDURANCE
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
-40 to 85 °C
100k
cycles
Minimum Pattern Data Retention Time
Erase/Program Endurance
Table 13. LATCH UP CHARACTERISTICS
Parameter Description
Min
Max
Input voltage with respect to Vss on all pins except I/O pins
(including A9, Reset and OE#)
-1.0 V
12.0 V
Input voltage with respect to Vss on all I/O Pins
-1.0 V
Vcc + 1.0 V
Vcc Current
-100 mA
100 mA
Note : These are latch up characteristics and the device should never be put under these conditions. Refer to
Absolute Maximum ratings for the actual operating limits.
Table 14. CAPACITANCE
( VCC = 2.7-3.6V)
Parameter Symbol
Parameter Description
Test Setup
Max
Unit
CIN
Input Capacitance
VIN = 0
Typ
6
pF
COUT
Output Capacitance
VOUT = 0
8
pF
Note : Sampled only, not 100% tested, at TA = 25°C and a frequency of 20MHz.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
27
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
PACKAGE MECHANICAL
Figure 24. SOP 150 mil
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
28
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Figure 25. VDFN8( 5x6mm )
DIMENSION IN MM
MIN.
NOR
A
0.76
0.80
A1
0.00
0.02
A2
--0.20
D
5.90
6.00
E
4.90
5.00
D2
4.18
4.23
E2
3.95
4.00
e
--1.27
b
0.35
0.40
L
0.55
0.60
Note : 1. Coplanarity: 0.1 mm
SYMBOL
MAX
0.84
0.04
--6.10
5.10
4.28
4.05
--0.45
0.65
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
29
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
ORDERING INFORMATION
EN25B20
T
-
50
G
C
P
PACKAGING CONTENT
(Blank) = Conventional
P = RoHS compliant
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (-40°C to +85°C)
PACKAGE
G = 8-pin 150mil SOP
V = 8-pin VDFN
SPEED
75 = 75 Mhz
50 = 50 Mhz
BOOT CODE SECTOR ARCHITECTURE
T = Top Sector
(Blank) = Bottom Sector
BASE PART NUMBER
EN = Eon Silicon Solution Inc.
25B = 3V Serial FLASH with boot sectors
20 = 2 Megabit (256K x 8)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
30
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
Revisions List
Revision No Description
A
B
C
Date
Initial release
2006/03/24
1. Add op-code: 9Fh and its description in page 20
2006/08/04
2. Add 3 specific op-codes to IDs in Table 5 of page 9
3. Change note 5 description in page 9
4. Change the description of FEATURES in page 1
(1) byte program time from 8 to 7µs,
(2) add page program time: 1.4ms,
(3) sector erase time from
“150ms to 500ms” to “100ms to 300ms”
(4) chip erase time from 2.5 sec to 1.5 sec
5. Change Table 10 AC Characteristics in page 23
(1) Data In Setup Time from 5ns to 2ns,
(2) 64KB sector erase time from 0.5 sec to 0.3 sec typical
64KB sector erase time from 1 sec to 0.6 sec max,
(3) 16KB sector erase time from 0.2 sec to 0.15 sec typical,
16KB sector erase time from 0.4 sec to 0.3 sec max,
(4) 4KB sector erase time from 0.15 sec to 0.1 sec typical,
4KB sector erase time from 0.3 sec to 0.2 sec max,
(5) bulk erase time from 2.5 sec to 1.5 sec typical
bulk erase time from 5 sec to 3 sec max.
6. Change ICC1, ICC2 in Table 8 from 10µA to 20µA in page 22
7. Add INSTRUCTIONS description in page 8
1. Change clock rate from 50MHz to 75MHz,
2006/12/26
Page program time 1.4 ms typical to 1.5 ms typical
Sector erase time 100 to 300 ms typical to 300 to 800 ms
Chip erase time 1.5 seconds to 3 seconds typical
in page 1
2. Change Table 8 DC Characteristics in page 22
(1) Add ICC3 for 75MHz
3. Change Table 10 to 75MHz AC Characteristics in page 23
(1) Change FR from 50 to 75MHz
(2) Change fR from 33 to 50MHz
(3) Change tCLH from 9ns to 6ns
(4) Change tCLL from 9ns to 6ns
(5) Change tSHQZ from 9ns to 6ns
(6) Change tHLQZ from 9ns to 6ns
(7) Change tHHQZ from 9ns to 6ns
(8) Change tCLQV from 9ns to 6ns
(9) Change Page program time 1.4ms typical to 1.5ms
(10) Change 64KB Sector erase time 0.3 / 0.6 seconds to
0.8 / 2 seconds for typical and maximum
(11) Change 16KB Sector erase time 0.15 / 0.3 seconds to
0.5 / 1 seconds for typical and maximum
(12) Change 4KB Sector erase time 0.1 / 0.2 seconds to
0.3 / 0.6 seconds for typical and maximum
(13) Change Chip erase time 1.5 / 3 seconds to 3 / 6
seconds for typical and maximum
4. Add Table 11: 50MHz AC Characteristics in page 24
(1) Change Page program time 1.4ms typical to 1.5ms
(2) Change 64KB Sector erase time 0.3 / 0.6 seconds to
0.8 / 2 seconds for typical and maximum
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
31
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
EN25B20
(3) Change 16KB Sector erase time 0.15 / 0.3 seconds to
0.5 / 1 seconds for typical and maximum
(4) Change 4KB Sector erase time 0.1 / 0.2 seconds to
0.3 / 0.6 seconds for typical and maximum
(5) Change Chip erase time 1.5 / 3 seconds to 3 / 6
seconds for typical and maximum
5. Add 75MHz option in Ordering Information in page 30
6. Change Table 8. DC Characteristics VIL Max 0.3 VCC to 0.2
VCC in page 22
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
32
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26