52'%+(+%#6+10 &GXKEG0COG 6[RG0COG 5RGE0Q May. 27 ¶05 S.Miyashita May. 27 ¶05 T.Miyasaka K.Yamada Y.Seki IGBT MODULE 2MBI300U4H-170 MS5F 6137 MS5F6137 1 13 *D 4GXKUGF4GEQTFU &CVG %NCUUK HKECVKQP May.-27 -¶05 'PCEVOGPV +PF %QPVGPV #RRNKGF FCVG +UUWGF FCVG &TCYP %JGEMGF %JGEMGF #RRTQXGF T.Miyasaka K.Yamada MS5F6137 Y.Seki 2 13 *D 2MBI300U4H-170 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit MS5F6137 3 13 *C 3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified 䋩 Items Sym bols Collector-Emitter voltage Gate-Emitter voltage VCES VGES Collector current Ic Continuous Icp 1ms -Ic -Ic pulse Pc Tj Tstg Collector Power Dissipation Junction temperature Storage temperature Isolation between terminal and copper base (*1) voltage Screw Torque Conditions Viso Mounting (*2) Terminals (*3) Tc=25°C Tc=80°C Tc=25°C Tc=80°C 1ms 1 device Maximum Ratings Units 1700 ±20 400 300 800 600 300 600 1470 150 -40 ~ +125 AC : 1min. - V V A W °C 3400 VAC 3.5 4.5 Nm (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5 or M6) (*3) Recommendable Value : Terminals 3.5~4.5 Nm (M6) 4. Electrical characteristics ( at Tj= 25°C unless otherwise specified) Items Symbols Zero gate voltage Collector current ICES Gate-Emitter leakage current IGES Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip(*4) VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr (i) toff tf Characteristics min. typ. max. Conditions VGE = 0V VCE = 1700V VCE = 0V VGE=±20V VCE = 20V Ic = 300mA Tj= 25°C Tj=125°C Tj= 25°C Ic = 300A Tj=125°C VCE=10V,VGE=0V,f=1MHz Vcc = 900V Ic = 300A VGE=±15V Rg = 1.5 ȍ VGE=15V VF (terminal) VGE=0V VF (chip) IF = 300A trr IF = 300A R lead Tj= 25°C Tj=125°C Tj= 25°C Tj=125°C Units - - 4.0 mA - - 800 nA 4.5 6.5 8.5 V - 2.45 2.85 2.25 2.65 28 0.62 0.39 0.05 0.55 0.09 2.00 2.20 1.80 2.00 - 2.60 2.40 1.20 0.60 1.50 0.30 2.35 2.15 0.6 - 0.53 - V nF ȝs V ȝs mȍ (*4) Biggest internal terminal resistance among arm. MS5F6137 4 13 *C 5. Thermal resistance characteristics Items Symbols Characteristics min. typ. max. Conditions Thermal resistance(1device) Rth(j-c) IGBT FWD - - 0.085 0.14 Contact Thermal resistance (1device) (*5) Rth(c-f) with Thermal Compound - 0.0125 - Units °C/W (*5) This is the value which is defined mounting on the additional cooling fin with thermal compound. 6. Indication on module Logo of production 2MBI300U4H-170 300A 1700V Lot.No. Place of manufacturing (code) 7.Applicable category This specification is applied to IGBT Module named 2MBI300U4H-170 . 8.Storage and transportation notes The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting. 㨪 㨪 9. Definitions of switching time 8 8 8 )' VT T +T T 8%' +E 㨪 㨪 8 # 8 %' +E 8 EE 4) 㨪 㨪 . 8%' VT K 8 )' +E VT VH VQ H H VQ P 10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box MS5F6137 5 13 *C 11. Reliability test results Reliability Test Items Test categories Test items Mechanical Tests Test methods and conditions (Aug.-2001 edition) 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor Environment Tests Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 Temperature Cycle Pull force Test time Screw torque : 40N : 10±1 sec. : 2.5 ~ 3.5 N䍃m (M5) 3.5 ~ 4.5 N䍃m (M6) Test time : 10±1 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 125±5 㷄 Test duration : 1000hr. Storage temp. : -40±5 㷄 Test duration : 1000hr. Storage temp. : 85±2 㷄 Relative humidity : 85±5% Test duration : 1000hr. Test temp. : 120㫧2 㷄 Test humidity : 85±5% Test duration : 96hr. Test temp. : Test Method 401 Method㸇 Test Method 402 method㸈 5 (0:1) 5 (0:1) Test Method 403 Reference 1 Condition code B 5 (0:1) Test Method 404 Condition code B 5 (0:1) Test Method 201 5 (0:1) Test Method 202 5 (0:1) Test Method 103 Test code C 5 (0:1) Test Method 103 Test code E 5 (0:1) Test Method 105 5 (0:1) Test Method 307 method 㸇 Condition code A 5 (0:1) Low temp. -40㫧5 㷄 High temp. 125 㫧5 㷄 Number of cycles RT 5 ~ 35 㷄 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles Test temp. : Dwell time 6 Thermal Shock High temp. 100 +0 -5 +5 -0 㷄 Low temp. 0 㷄 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles MS5F6137 6 13 *C Reliability Test Items Test categories Test items Test methods and conditions (Aug.-2001 edition) 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Endurance Endurance Tests Tests Reference Number Acceptnorms ance of EIAJ ED-4701 sample number Test duration 2 High temperature Bias (for gate) Test duration : Ta = 125㫧5 㷄 (Tj 㻡150 㷄) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. Test temp. Relative humidity Bias Voltage Bias Method : : : : Test duration ON time OFF time Test temp. : : : : Number of cycles : Test temp. Bias Voltage Bias Method 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycle) ( for IGBT ) Test Method 101 5 (0:1) Test Method 101 5 (0:1) Test Method 102 Condition code C 5 (0:1) Test Method 106 5 (0:1) : Ta = 125㫧5 㷄 (Tj 㻡150 㷄) : VC = 0.8×VCES : Applied DC voltage to C-E VGE = 0V : 1000hr. 85㫧2 oC 85㫧5% VC = 0.8×VCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. 'Tj=100±5 deg Tj 㻡150 㷄, Ta=25±5 㷄 15000 cycles Failure Criteria Item Characteristic Symbol Electrical Leakage current ICES characteristic ±IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT 'VGE resistance or 'VCE FWD 'VF Isolation voltage Viso Visual Visual inspection inspection Peeling Plating and the others Failure criteria Unit Lower limit Upper limit LSL×0.8 - USL×2 USL×2 USL×1.2 USL×1.2 USL×1.2 USL×1.2 mA PA mA V V mV USL×1.2 Broken insulation mV - The visual sample Note - LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS5F6137 7 13 *C Reliability Test Results Mechanical Tests Test categorie s Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample Test Method 401 5 0 5 0 Method㸇 Test Method 402 method㸈 3 Vibration Test Method 403 5 0 4 Shock Condition code B Test Method 404 5 0 Environment Tests Condition code B 1 High Temperature Storage Test Method 201 5 0 2 Low Temperature Storage Test Method 202 5 0 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor Test Method 103 5 * 5 0 5 Temperature Cycle Test Method 105 5 0 6 Thermal Shock Test Method 307 5 0 1 High temperature Reverse Bias Test Method 101 5 * Test Method 101 5 0 Test Method 102 5 * 5 0 Test code C Test Method 103 Test code E method 㸇 Endurance Tests Condition code A 2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias Condition code C 4 Intermitted Operating Life (Power cycling) ( for IGBT ) Test Method 106 * under confirmation MS5F6137 8 13 *C Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C/ chip 800 800 VGE=20V 15V 12V Collector current : Ic [A] Collector current : Ic [A] VGE=20V 15V 600 10V 400 200 600 400 12V 10V 200 8V 8V 0 0 0 1 2 3 4 0 5 Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Collector - Emitter voltage : VCE [ V ] Tj=25°C Collector current : Ic [A] 2 3 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 10 800 600 Tj=125°C 400 200 0 8 6 4 Ic=600A Ic=300A Ic=150A 2 0 0 1 2 3 4 5 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Dynamic Gate charge (typ.) Vcc=900V䋬 Ic=300A䋬Tj= 25°C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 1000.0 Capacitance : Cies, Coes, Cres [ nF ] 1 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 100.0 Cies 10.0 Coes 1.0 Cres VCE VGE 0.1 0 10 20 Collector-Emitter voltage : VCE [V] 30 0 200 400 600 800 1000 Gate charge : Qg [nC] MS5F6137 9 13 *C Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.5ȍ, Tj= 25°C Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.5ȍ, Tj=125°C 10000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 ton toff tr tf 100 toff 1000 ton tr tf 100 10 10 0 100 200 300 400 500 600 0 100 Collector current : Ic [A] 400 500 600 Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.5ȍ Switching loss : Eon, Eoff, Err [ mJ/pulse ] 1000 ton toff tr 100 tf 150 Eoff(125°C) 125 100 Err(125°C) Eoff(25°C) Eon(125°C) Err(25°C) 75 Eon(25°C) 50 25 10 0 0.1 1.0 10.0 0 100.0 100 200 300 400 500 600 Collector current : Ic [A] Gate resistance : RG [ȍ] Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=300A, VGE=±15V, Tj= 125°C Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 1.5ȍ ,Tj <= 125°C 300 800 250 Eon 200 150 Eoff 100 Collector current : Ic [A] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 300 Vcc=900V, Ic=300A, VGE=±15V, Tj= 25°C 10000 Switching time : ton, tr, toff, tf [ nsec ] 200 Collector current : Ic [A] 600 400 200 Err 50 0 0 0.1 1.0 10.0 Gate resistance : RG [ȍ] 100.0 0 500 1000 1500 Collector-Emitter voltage : VCE [V] MS5F6137 10 13 *C Forward current vs. Forward on voltage (typ.) chip Reverse recovery characteristics (typ.) Vcc=900V, VGE=±15V, Rg=1.5ȍ 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 800 Forward current : IF [A] 700 Tj=25°C 600 Tj=125°C 500 400 300 200 100 Irr (125°C) Irr (25°C) trr (125°C) trr (25°C) 100 10 0 0 1 2 3 4 0 100 200 300 400 500 600 Forward current : IF [A] Forward on voltage : VF [V] Transient thermal resistance䇭(max.) Thermal resistanse : Rth(j-c) [ °C/W ] 1.000 FWD IGBT 0.100 0.010 0.001 0.001 0.010 0.100 1.000 Pulse width : Pw [sec] MS5F6137 11 13 *C Warnings - This product shall be used within its absolute maximum rating (voltage, current, and temperature).䇭This product may be broken in case of using beyond the ratings. ຠ䈱⛘ኻᦨᄢቯᩰ䋨㔚䋬㔚ᵹ䋬᷷ᐲ╬䋩䈱▸࿐ౝ䈪ᓮ↪ਅ䈘䈇䇯⛘ኻᦨᄢቯᩰ䉕䈋䈩↪䈜䉎䈫䇮⚛ሶ䈏⎕უ䈜䉎 ႐ว䈏䈅䉍䉁䈜䇯 - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. ਁ৻䈱ਇᘦ䈱䈪⚛ሶ䈏⎕უ䈚䈢႐ว䉕⠨ᘦ䈚䇮↪㔚Ḯ䈫ᧄຠ䈱㑆䈮ㆡಾ䈭ኈ㊂䈱䊍䊠䊷䉵䈲䊑䊧䊷䉦䊷䉕ᔅ䈝 ઃ䈔䈩Ἣἴ䋬⊒䋬ᑧ╬䈱䋲ᰴ⎕უ䉕㒐䈇䈪䈒䈣䈘䈇䇯 - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. ຠ䈱↪ⅣႺ䉕චಽ䈮ᛠី䈚䇮ຠ䈱ା㗬ᕈኼ䈏ḩ⿷䈪䈐䉎䈎ᬌ⸛䈱䇮ᧄຠ䉕ㆡ↪䈚䈩ਅ䈘䈇䇯ຠ䈱ା㗬ᕈኼ 䉕䈋䈩↪䈚䈢႐ว䇮ⵝ⟎䈱⋡ᮡኼ䉋䉍೨䈮⚛ሶ䈏⎕უ䈜䉎႐ว䈏䈅䉍䉁䈜䇯 - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. ㉄䊶ᯏ‛䊶⣣㘩ᕈ䉧䉴䋨⎫ൻ᳓⚛䋬⎫㉄䉧䉴╬䋩䉕䉃ⅣႺਅ䈪↪䈘䉏䈢႐ว䇮ຠᯏ⢻䊶ᄖⷰ╬䈱⸽䈲䈪䈐䉁䈞䉖䇯 - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. ᧄຠ䈲䇮䊌䊪䊷䉰䉟䉪䊦ኼ䉦䊷䊑એਅ䈪↪ਅ䈘䈇㩿ᛛⴚ⾗ᢱ㪥㫆㪅㪑㩷㪤㪫㪌㪝㪈㪉㪐㪌㪐㪀䇯䊌䊪䊷䉰䉟䉪䊦⠴㊂䈮䈲䈖䈱㰱㪫㫁䈮䉋䉎 ႐ว䈱ઁ䈮䇮㰱㪫㪺䈮䉋䉎႐ว䈏䈅䉍䉁䈜䇯䈖䉏䈲䉬䊷䉴᷷ᐲ㩿㪫㪺㪀䈱ਅ㒠䈮䉋䉎ᾲ䉴䊃䊧䉴䈪䈅䉍䇮ᧄຠ䉕䈗↪䈜䉎㓙 䈱ᾲ⸳⸘䈮ଐሽ䈚䉁䈜䇯䉬䊷䉴᷷ᐲ䈱ਅ㒠䈏㗫❥䈮䈖䉎႐ว䈲䇮ຠኼ䈮චಽ⇐ᗧ䈚䈩䈗↪ਅ䈘䈇䇯 - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. ਥ┵ሶ䈶ᓮ┵ሶ䈮ᔕജ䉕ਈ䈋䈩ᄌᒻ䈘䈞䈭䈇䈪ਅ䈘䈇䇯䇭┵ሶ䈱ᄌᒻ䈮䉋䉍䇮ធ⸅ਇ⦟䈭䈬䉕ᒁ䈐䈖䈜႐ว䈏䈅䉍䉁䈜䇯 - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. ಄ළ䊐䉞䊮䈲䊈䉳ข䉍ઃ䈔⟎㑆䈪ᐔမᐲ䉕100mm䈪100umએਅ䇮㕙䈱☻䈘䈲10umએਅ䈮䈚䈩ਅ䈘䈇䇯䇭ㆊᄢ䈭ಲ䉍 䈏䈅䈦䈢䉍䈜䉎䈫ᧄຠ䈏⛘✼⎕უ䉕䈖䈚䇮㊀ᄢ䈮⊒ዷ䈜䉎႐ว䈏䈅䉍䉁䈜䇯䉁䈢䇮ㆊᄢ䈭ಳ䉍䉇䉉䈏䉂╬䈏䈅䉎䈫䇮 ᧄຠ䈫಄ළ䊐䉞䊮䈱㑆䈮ⓨ㓗䈏↢䈛䈩ᾲ䈏ᖡ䈒䈭䉍䇮ᾲ⎕უ䈮❬䈏䉎䈖䈫䈏䈅䉍䉁䈜䇯 - In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) ⚛ሶ䉕಄ළ䊐䉞䊮䈮ข䉍ઃ䈔䉎㓙䈮䈲䇮ᾲવዉ䉕⏕䈜䉎䈢䉄䈱䉮䊮䊌䉡䊮䊄╬䉕䈗↪䈒䈣䈘䈇䇯䇮ႣᏓ㊂䈏ਇ⿷䈚䈢䉍䇮 ႣᏓᣇᴺ䈏ਇㆡ䈣䈦䈢䉍䈜䉎䈫䇮䉮䊮䊌䉡䊮䊄䈏චಽ䈮⚛ሶో䈮ᐢ䈏䉌䈝䇮ᾲᖡൻ䈮䉋䉎ᾲ⎕უ䈮❬䈏䉎䈏䈅䉍䉁䈜䇯 䉮䊮䊌䉡䊮䊄䉕ႣᏓ䈜䉎㓙䈮䈲䇮ຠో㕙䈮䉮䊮䊌䉡䊮䊄䈏ᐢ䈏䈦䈩䈇䉎䉕⏕䈚䈩䈒䈣䈘䈇䇯 㩿ታⵝ䈚䈢ᓟ䈮⚛ሶ䉕ข䉍䈲䈝䈜䈫䉮䊮䊌䉡䊮䊄䈱ᐢ䈏䉍ౕว䉕⏕䈜䉎䈏᧪䉁䈜䇯㪀 - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. 䉺䊷䊮䉥䊐㔚䊶㔚ᵹ䈱േ゠〔䈏㪩㪙㪪㪦㪘᭽ౝ䈮䈅䉎䈖䈫䉕⏕䈚䈩ਅ䈘䈇䇯㪩㪙㪪㪦㪘䈱▸࿐䉕䈋䈩↪䈜䉎䈫⚛ሶ䈏⎕უ 䈜䉎น⢻ᕈ䈏䈅䉍䉁䈜䇯 - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. ᓮ┵ሶ䈮ㆊᄢ䈭㕒㔚᳇䈏ශട䈘䉏䈢႐ว䇮⚛ሶ䈏⎕უ䈜䉎႐ว䈏䈅䉍䉁䈜䇯ข䉍ᛒ䈇ᤨ䈲㕒㔚᳇ኻ╷䉕ታᣉ䈚䈩ਅ䈘䈇䇯 MS5F6137 12 13 *C Warnings - Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. ⚛ሶ䉕ⵝ⟎䈮ታⵝ䈜䉎㓙䈮䇮ਥ┵ሶ䉇ᓮ┵ሶ䈮ㆊᄢ䈭ᔕജ䉕ਈ䈋䈭䈇䈪ਅ䈘䈇䇯┵ሶ᭴ㅧ䈏⎕უ䈜䉎น⢻ᕈ䈏䈅䉍䉁䈜䇯 - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) ㅒ䊋䉟䉝䉴䉭䊷䊃㔚㪄㪭㪞㪜䈏ਇ⿷䈚䉁䈜䈫⺋ὐᒐ䉕䈖䈜น⢻ᕈ䈏䈅䉍䉁䈜䇯⺋ὐᒐ䉕䈖䈘䈭䈇ὑ䈮㪄㪭㪞㪜䈲චಽ䈭୯䈪 ⸳ቯ䈚䈩ਅ䈘䈇䇯䇭䋨ផᅑ୯㩷㪑㩷㪄㪭㪞㪜㩷㪔㩷㪄㪈㪌㪭㪀 - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. 䉺䊷䊮䉥䊮㩷㪻㫍㪆㪻㫋㩷䈏㜞䈇䈫ኻ᛫䉝䊷䊛䈱䌉䌇䌂䌔䈏⺋ὐᒐ䉕䈖䈜น⢻ᕈ䈏䈅䉍䉁䈜䇯⺋ὐᒐ䉕䈖䈘䈭䈇ὑ䈱ᦨㆡ䈭䊄䊤䉟䊑 ᧦ઙ䋨㪂㪭㪞㪜㪃㩷㪄㪭㪞㪜㪃㩷㪩㪞╬䋩䈪䈗↪ਅ䈘䈇䇯 - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. 㪭㪚㪜㪪䉕䈋䈢㔚䈏ශട䈘䉏䈢႐ว䇮䉝䊋䊤䊮䉲䉢䉕䈖䈚䈩⚛ሶ⎕უ䈜䉎႐ว䈏䈅䉍䉁䈜䇯㪭㪚㪜䈲ᔅ䈝⛘ኻቯᩰ䈱▸࿐ౝ 䈪䈗↪ਅ䈘䈇䇯 㪚㪸㫌㫋㫀㫆㫅㫊 - Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. ን჻㔚ᯏ䊂䊋䉟䉴䊁䉪䊉䊨䉳䊷䈲⛘䈋䈝ຠ䈱ຠ⾰䈫ା㗬ᕈ䈱ะ䈮ദ䉄䈩䈇䉁䈜䇯䈚䈎䈚䇮ඨዉຠ䈲㓚䈏⊒↢䈚䈢䉍䇮 ⺋േ䈜䉎႐ว䈏䈅䉍䉁䈜䇯ን჻㔚ᯏ䊂䊋䉟䉴䊁䉪䊉䊨䉳䊷ඨዉຠ䈱㓚䉁䈢䈲⺋േ䈏䇮⚿ᨐ䈫䈚䈩ੱり䊶Ἣἴ ╬䈮䉋䉎⽷↥䈮ኻ䈜䉎៊ኂ䉇␠ળ⊛䈭៊ኂ䉕䈖䈘䈭䈇䉋䈉䈮౬㐳⸳⸘䊶ᑧ㒐ᱛ⸳⸘䊶⺋േ㒐ᱛ⸳⸘䈭䈬ో⏕ 䈱䈢䉄䈱ᚻᲑ䉕⻠䈛䈩ਅ䈘䈇䇯 - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. ᧄ᭽ᦠ䈮⸥タ䈚䈩䈅䉎ᔕ↪䈲䇮ን჻㔚ᯏ䊂䊋䉟䉴䊁䉪䊉䊨䉳䊷ຠ䉕↪䈚䈢ઍ⊛䈭ᔕ↪䉕⺑䈜䉎䉅䈱䈪䈅䉍䇮 ᧄ᭽ᦠ䈮䉋䈦䈩Ꮏᬺᚲᮭ䇮䈠䈱ઁᮭ䈱ታᣉ䈮ኻ䈜䉎㓚䉁䈢䈲ታᣉᮭ䈱⸵⻌䉕ⴕ䈉䉅䈱䈪䈲䈅䉍䉁䈞䉖䇯 - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems,䇭please apply after confirmation of this product to be satisfied about system construction and required reliability. ᧄ᭽ᦠ䈮⸥タ䈘䉏䈢ຠ䈲䇮ੱ䈮䈎䈎䉒䉎䉋䈉䈭⁁ᴫਅ䈪↪䈘䉏䉎ᯏེ䈅䉎䈇䈲䉲䉴䊁䊛䈮↪䈇䉌䉏䉎䈖䈫䉕 ⋡⊛䈫䈚䈩⸳⸘䊶ㅧ䈘䉏䈢䉅䈱䈪䈲䈅䉍䉁䈞䉖䇯ᧄ᭽ᦠ䈱ຠ䉕ゞਔᯏེ䇮⦁⥾䇮⥶ⓨቝቮ䇮ක≮ᯏེ䇮ේሶജ ᓮ䇮ᶏᐩਛ⛮ᯏེ䈅䉎䈇䈲䉲䉴䊁䊛䈭䈬䇮․ᱶ↪ㅜ䈻䈱䈗↪䉕䈗ᬌ⸛䈱㓙䈲䇮䉲䉴䊁䊛᭴ᚑ䈶ⷐ᳞ຠ⾰䈮 ḩ⿷䈜䉎䈖䈫䉕䈗⏕䈱䇮䈗↪ਅ䈘䈇䇯 If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd. MS5F6137 13 13 *C