FUJI ESAC87M-009R

ESAC87M-009R (16A)
(90V / 16A )
Outline drawings, mm
15.5 ±0.3
±0.3
+0.2
5.45 ±0.2
3.5 ±0.2
0.6 +0.2
1. Gate
2. Drain
3. Source
JEDEC
Insulated package by fully molding
Low VF
3.2 +0.3
20 Min
1.6 ±0.3
1.1 —0.1
Features
±0.3
21.5
5.5 ±0.2
2.3 ±0.2
2.1±0.3
5.45 ±0.2
5.5
ø3.2 ±0.2
9.3 ±0.3
SCHOTTKY BARRIER DIODE
EIAJ
Super high speed switching
Connection diagram
High reliability by planer design
種07.
機
定 h 20
Applications
High speed power switching
Maximum ratings and characteristics
Absolute maximum ratings
Symbol
Item
保uled befor new
Conditions
月sched mend
3
年
is com
t
7
c
00 odu t re
VRRM
Non-repetitive peak reverse voltage
VRSM
tw=500ns, duty=1/40
V iso
Terminals-to-case,
AC. 1min.
Io
Square wave, duty=1/2
Tc=115°C
Sine wave
10ms
2 his
T
Average output current
pr
No
3
rc
a
予
止 on m
ete ign.
廃
l
o
守 obs des
Repetitive peak reverse voltage
Isolating voltage
2
1
Rating
Unit
90
V
100
V
1500
V
16*
A
100
A
Surge current
IFSM
Operating junction temperature
Tj
-40 to +150
°C
Storage temperature
Tstg
-40 to +150
°C
* Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VFM
IFM=6A
Reverse current
IRRM
VR=VRRM
Thermal resistance
Rth(j-c)
Junction to case
Max.
Unit
0.9
V
10
2.0
mA
°C/W
ESAC87M-009R (16A)
(90V / 16A )
Characteristics
Forward Characteristic (typ.)
Reverse Characteristic (typ.)
100
3
10
o
Tj=150 C
2
10
o
(mA)
Tj=125 C
10
o
Reverse Current
Tj=150 C
(A)
o
Tj=125 C
o
Tj=100 C
o
Tj=25 C
1
0
10
-1
10
o
Tj= 25 C
IR
Forward Current
o
Tj=100 C
1
10
-2
IF
10
0.1
-3
0.0
0.2
0.4
0.6
VF
0.8
1.0
1.2
Forward Voltage
1.4
10
1.6
0
10
20
VR
26
Io
50
70
(V)
(W)
λ
10
Reverse Power Dissipation
360°
9
8
o
Square wave λ =60
Square wave λ=120
o
Sine wave λ =180
6
o
Square wave λ=180
DC
5
100
20
rc
a
予
止 on m
α
18
16
14
12
o
α =180
保uled befor new
4
3
90
DC
VR
22
ete ign.
廃
l
o
守 obs des
o
7
80
種07.
機
定 h 20
360°
24
11
(W)
40
28
12
Forward Power Dissipation
60
Reverse Voltage
Reverse Power Dissipation
Forward Power Dissipation
13
10
8
月sched mend
3
年
is com
t
7
c
00 odu t re
6
PR
WF
30
(V)
2
1
4
2
Per 1element
0
0
0
1
2
3
4
5
6
2 his pr
Io
T
7
Average Forward Current
No
8
9
0
(A)
Current Derating (Io-Tc)
10
20
30
40
VR
50
60
Reverse Voltage
70
80
90
100
(V)
Junction Capacitance Characteristic (typ.)
160
1000
150
(pF)
130
Junction Capacitance
DC
120
o
Square wave λ =180
o
Sine wave λ =180
110
o
Square wave λ =120
100
360°
λ
Io
90
o
Tc
100
Cj
Case Temperature
(
o
C)
140
Square wave λ =60
VR=50V
80
70
10
0
2
4
6
Io
8
10
12
14
16
Average Output Current
18
20
(A)
λ :Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
22
24
10
VR
Reverse Voltage
100
(V)
ESAC87M-009R (16A)
(90V / 16A )
Surge Capability
Peak Half - Wave Current
(A)
1000
I FSM
100
10
1
10
100
Number of Cycles at 50Hz
Transient Thermal Impedance
種07.
機
定 h 20
1
o
C/W )
10
Transient Thermal Impedance
(
rc
a
予
止 on m
10
ete ign.
廃
l
o
守 obs des
0
保uled befor new
-1
10
-3
10
月sched mend
3
年
is com
t
7
c
00 odu t re
-2
10
2 his pr
T
10
t
-1
10
Time
(sec.)
No
0
1
10
2
10