VAM 120 120 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz GENERAL DESCRIPTION CASE OUTLINE The VAM 120 is a COMMON EMITTER device designed to operae in a collector modulated VHF power amplifier. It is a common emitter device, optimized for use in the 100-150 MHz range. 55HT, Style 2 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 140 Watts Maximum Voltage and Current BVces Collector to Emiter Voltage BVebo Emitter to Base Voltage Ic Collector Current 60 Volts 4.0 Volts 12 A Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to +150 oC +200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS MIN Pout Pin Pg Pout Pin Pg ηc VSWR Power Output Power Input Power Gain F = 150 MHz Vcc = 27 Volts 120 BVebo BVces BVceo Cob hFE θjc F = 150 MHz Vcc = 13.5 Volts 7.8 30 4.8 Efficiency Load Mismatch Tolerance Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown Output Capacitance DC - Current Gain Thermal Resistance TYP MAX 15 9.0 20 7.5 6.0 65 10 UNITS Watts Watts dB Watts Watts dB % 30:1 Ie = 5 mA Ic = 20 mA Ie = 50 mA 4.0 60 32 Vce = 5 V, Ic = 1 A 10 Volts Volts Volts pF 240 1.2 o C/W Issue August 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 VAM -120 August 1996