GTM G266

ISSUED DATE :2004/11/03
REVISED DATE :
G266
Complementary Output Hall Effect Latched Sink Driver IC
Description
The G266 is an integrated Hall sensors with output drivers designed for electronic commutation of brushless DC motor
applications. The device includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall
voltage, and a Schmitt trigger to provide switching hysteresis for noise rejection, and complementary open-collector drivers for
sinking large current loads. An internal bandgap regulator is used to provide temperature compensated supply voltage for internal
circuits and allows a wide operating supply range.
If a magnetic flux density larger than threshold Bop, DO is turned on (low) and DOB is turned off (high). The output state is
held until a magnetic flux density reversal falls below Brp causing DO to be turned off and DOB turned on.
G266 is rated for operation over temperature range from -20
to 100
and voltage range from 3.5V to 28V. The devices
are available in low cost die forms or rugged 4 pin SIP packages.
Features
*On-chip Hall sensor IC with two different sensitivity and hysteresis settings for G266
*Internal bandgap regulator allows temperature compensated operations and a wide operating voltage range.
*High output sinking capability up to 300mA for driving large load.
*Lower current change rate reduces the peak output voltages during switching.
*Build in protection diode for chip reverse power connecting.
*Package: SIP-4L.
Application
1)Brushless DC Motor
2)Brushless DC Fan
3)Revolution Counting
4)Speed Measurement
Package Dimensions
REF.
Millimeter
Min.
Max.
A
1.295
1.803
A1
0.610
b
0.330
b1
0.406
REF.
Millimeter
Min.
Max.
D
5.105
5.359
E
3.531
3.785
0.432
L
14
16
0.508
e
1.27REF
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ISSUED DATE :2004/11/03
REVISED DATE :
Functional Block Diagrams
VCC
1
2
OUTPUT(DO)
3
OUTPUT(DOB)
REG.
HALL
SENSOR
4
VSS
Pin Descriptions
P/I/O
P
O
O
P
Name
Vcc
DO
DOB
Vss
Pin#
1
2
3
4
Description
Positive Power supply
Output Pin
Output Pin
Ground
Absolute Maximum Ratings at Ta = 25
Parameter
Supply Voltage
Reverse Vcc Polarity Voltage
Magnetic flux density
Output OFF Voltage
Continuous
Output ON Current Hold
Peak(Start UP)
Operating Temperature Range
Storage Temperature Range
Package Power Dissipation
Maximum Junction Temp.
Symbol
Vcc
VRCC
B
Vce
IC
Ta
Ts
PD
Tj
VALUE
28V
-35V
Unlimited
50(Note1)
300
400
700
-20~100
-65~150
550
175
Unit
V
V
V
mA
mW
Note 1 Output Zener protection voltage.
Electrical Characteristics (Ta=+25 , Vcc=4.0V to 20V)
Parameter
Low Supply Voltage
Supply Voltage
Symbol
Test Conditions
Vce
Vcc=3.5V, IL=100mA
Vcc
-
Output Saturation Voltage
Vce(sat) Vcc=14V, IL=300mA
Output Leakage Current
Supply Current
Output Rise Time
Output Falling Time
Switch Time Differential
ICex
ICC
Tr
Tf
t
Vce=14V, Vcc=14V
Vcc=20V, Output Open
Vcc=14V, RL=820 , CL=20pf
Vcc=14V, RL=820 , CL=20pf
Vcc=14V, RL=820 , CL=20pf
Min
3.5
Typ
0.4
-
Max
28
Unit
-
0.6
0.9
V
-
<0.1
13
3.0
0.3
3.0
10
20
10
1.5
10
V
V
uA
mA
us
us
us
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ISSUED DATE :2004/11/03
REVISED DATE :
Power dissipation VS. Environment Temperature
Ta( )
25 50 60 70 80 85 90 95 100 105 110 115 120
Pd(mW) 550 525 515 505 485 475 465 455 445 425 405 385 365
P o w e r D is s ip a tio n C u rv e
P d (m W )
600
500
400
300
200
100
0
25
50
75
100
125
150
T a (ºC )
Magnetic Characteristics
Characteristic
BIN A
Operate Point
BIN B
BIN C
BIN A
Release Point BIN B
BIN C
BIN A
Hysteresis
BIN B
BIN C
Symbol
Bop
Bop
Bop
Brp
Brp
Brp
Bhys
Bhys
Bhys
Ta=+25
Min
Max
0
70
100
130
-70
0
-100
-130
40
110
50
150
60
160
Ta=0
Min
0
-70
-100
-130
20
30
40
to 70
Max
70
100
130
0
140
200
220
Unit
Gauss
Gauss
Gauss
Gauss
Gauss
Gauss
Gauss
Gauss
Gauss
Test Circuit
14V
Vout1(DO)
RL1
Vout2(DOB)
RL2
RL1=RL2=820 Ohm
CL1=CL2=20 pF
CL1
CL2
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ISSUED DATE :2004/11/03
REVISED DATE :
Hysteresis Characteristics
Bin A
12
RP
OFF
10
8
6
4
2
ON
-200
-100
0
OP
100
DO
Output Voltage in Volts
Output Voltage in Volts
DOB
200
OP
10
8
6
4
2
RP
-200
Magnetic Flux Density in Gauss
12
OFF
-100
0
ON
100
200
Magnetic Flux Density in Gauss
Bin B
12
RP
Output Voltage in Volts
DO
OFF
10
8
6
4
2
ON
-200
-100
0
OP
100
200
Magnetic Flux Density in Gauss
Output Voltage in Volts
12
OFF
10
8
6
4
2
ON
-200
-100
0
OP
100
200
Magnetic Flux Density in Gauss
OP
10
8
6
4
2
RP
-100
0
ON
100
200
Magnetic Flux Density in Gauss
Bin C
DOB
RP
12
OFF
-200
DO
Output Voltage in Volts
Output Voltage in Volts
DOB
12
OFF
OP
10
8
6
4
2
RP
-200
-100
0
ON
100
200
Magnetic Flux Density in Gauss
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ISSUED DATE :2004/11/03
REVISED DATE :
Application Circuit Double Coil
1) Output on current, Ic > 200mA
2) With FG output
Remark: C1, C2: Capacitor 2.2 F~4.7 F (optional)
Remark: C1: Capacitor 0.1 F~1 F R1: Resister 1K
Package Information
Active Area Depth
Package Sensor Location
1.75mm
Top
View
Marking
Site
1.35mm
0.7mm
Top
View
1
2
3
4
Tolerance: +/- 0.05mm
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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