GTM G2N4401

CORPORATION
G2N4401
ISSUED DATE :2004/04/23
REVISED DATE :2004/11/29B
NP N E PITAX I AL PLANAR T RANSI STOR
Description
The G2N4401 is designed for general purpose switching and amplifier applications.
Features
*Complementary to G2N4403
*High Power Dissipation: 625mW at 25
*High DC Current Gain: 100-300 at 150mA
*High Breakdown Voltage: 40V Min
Package Dimensions
D
E
S1
A
TO-92
b1
S E A T IN G
PLANE
Millimeter
Min.
Max.
4.45
4.7
1.02
0.36
0.51
0.36
0.76
0.36
0.51
L
REF.
e1
b
e
A
S1
b
b1
C
C
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
1.150 1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Ratings
Tj
+150
Junction Temperature
Storage Temperature
Unit
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
40
V
Emitter to Base Voltage
VEBO
5
V
Collector Current
IC
600
mA
Total Power Dissipation
PD
625
mW
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
-
-
V
BVCEO
40
-
-
V
IC=1mA
BVEBO
5
-
-
V
IE=10uA
IC=100uA
ICEX
-
-
100
nA
VCE=35V, V BE= 0.4V
*VCE(sat)1
-
-
400
mV
IC=150mA, IB=15mA
*VCE(sat)2
-
-
750
mV
IC=500mA, IB=50mA
*VBE(sat)1
750
-
950
mV
IC=150mA, IB=15mA
V
*VBE(sat)2
-
-
1.2
*hFE1
20
-
-
VCE=1V, IB=0.1mA
*hFE2
40
-
-
VCE=1V, IC=1mA
*hFE3
80
-
-
VCE=1V, IC=10mA
*hFE4
100
-
300
VCE=1V, IC=150mA
*hFE5
40
-
-
fT
250
-
-
MHz
-
-
6.5
pF
Cob
VCE=2V, IC=500mA
Classification Of hFE4
G2N4401
IC=500mA, IB=50mA
VCE=10V, IC =20mA, f=100MHz
VCB=5V, f=1MHz
* Pulse Test: Pulse Width 380us, Duty Cycle 2%
Rank
A
B
Range
100-210
190-300
Page: 1/2
CORPORATION
ISSUED DATE :2004/04/23
REVISED DATE :2004/11/29B
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
G2N4401
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