CORPORATION G2N4401 ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B NP N E PITAX I AL PLANAR T RANSI STOR Description The G2N4401 is designed for general purpose switching and amplifier applications. Features *Complementary to G2N4403 *High Power Dissipation: 625mW at 25 *High DC Current Gain: 100-300 at 150mA *High Breakdown Voltage: 40V Min Package Dimensions D E S1 A TO-92 b1 S E A T IN G PLANE Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 L REF. e1 b e A S1 b b1 C C REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings at Ta = 25 Parameter Symbol Ratings Tj +150 Junction Temperature Storage Temperature Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 40 V Emitter to Base Voltage VEBO 5 V Collector Current IC 600 mA Total Power Dissipation PD 625 mW Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V BVCEO 40 - - V IC=1mA BVEBO 5 - - V IE=10uA IC=100uA ICEX - - 100 nA VCE=35V, V BE= 0.4V *VCE(sat)1 - - 400 mV IC=150mA, IB=15mA *VCE(sat)2 - - 750 mV IC=500mA, IB=50mA *VBE(sat)1 750 - 950 mV IC=150mA, IB=15mA V *VBE(sat)2 - - 1.2 *hFE1 20 - - VCE=1V, IB=0.1mA *hFE2 40 - - VCE=1V, IC=1mA *hFE3 80 - - VCE=1V, IC=10mA *hFE4 100 - 300 VCE=1V, IC=150mA *hFE5 40 - - fT 250 - - MHz - - 6.5 pF Cob VCE=2V, IC=500mA Classification Of hFE4 G2N4401 IC=500mA, IB=50mA VCE=10V, IC =20mA, f=100MHz VCB=5V, f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Rank A B Range 100-210 190-300 Page: 1/2 CORPORATION ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 G2N4401 Page: 2/2