CORPORATION G2N4403 ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B P NP EP ITAXI AL P L ANAR TANSI STOR Description The G2N4403 is designed for general purpose switching and amplifier applications. Features *Complementary to G2N4401 *High Power Dissipation: 625mW at 25 *High DC Current Gain: 100-300 at 150mA *High Breakdown Voltage: 40V Min Package Dimensions D E S1 A TO-92 b1 S E A T IN G PLANE Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 L REF. e1 b e A S1 b b1 C C Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 REF. D E L e1 e Absolute Maximum Ratings at Ta = 25 Parameter Symbol Ratings Tj +150 Junction Temperature Storage Temperature Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -40 V Emitter to Base Voltage VEBO -5 V Collector Current IC -600 mA Total Power Dissipation PD 625 mW Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO -40 - - V BVCEO -40 - - V IC=-1mA BVEBO -5 - - V IE=-10uA ICEX - - -100 nA VCE=-35V, V BE= -0.4V *VCE(sat)1 - - -0.4 V IC=-150mA, IB=-15mA *VCE(sat)2 - - -750 mV IC=-500mA, IB=-15mA *VBE(sat)1 -750 - -950 mV IC=-150mA, IB=-15mA *VBE(sat)2 - - -1.3 V IC=-500mA, IB=-50mA *hFE1 30 - - *hFE2 60 - - VCE=-1V, IC=-1mA *hFE3 100 - - VCE=-1V, IC=-10mA *hFE4 100 - 300 VCE=-2V, IC=-150mA 20 - - fT 200 - - MHz - - 8.5 pF VCE=-2V, IC=-500mA Classification OF hFE4 G2N4403 IC=-100uA VCE=-1V, IB=-0.1mA *hFE5 Cob Test Conditions VCE=-10V, IC =-20mA, f=100MHz VCB=-10V, f=1MHz * Pulse Test: Pulse Width Rank A B Range 100-210 190-300 380us, Duty Cycle 2% Page: 1/2 CORPORATION ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 G2N4403 Page: 2/2