ISSUED DATE :2005/12/12 REVISED DATE : GESD880 NPN EPITAXIAL PLANAR TRANSISTOR Description The GESD880 is designed for audio frequency power amplifier application. Features High DC Current Gain: hFE = 300 (Max.) @ VCE = 5V, IC = 0.5A Low Saturation Voltage: VCE (sat) = 1.0V (Max.) @ IC = 3A, IB = 0.3A Package Dimensions Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. A b c D E L4 L5 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings (TA=25 ) Symbol Ratings Unit Collector to Base Voltage Parameter VCBO 80 V Collector to Emitter Voltage VCEO 62 V Emitter to Base Voltage VEBO 7 V Collector Current IC 3 A Collector Power Dissipation (TA=25 ) PD 1.5 W Collector Power Dissipation (TC=25 ) PD 25 W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~ +150 Electrical Characteristics (TA = 25 Symbol unless otherwise noted) Min. Typ. Max. Unit BVCBO 80 - - V IC=100uA, IE=0 BVCEO 62 - - V IC=50mA, IB=0 BVEBO 7 - - V IE=100uA, IC=0 ICBO - - 10 uA VCB=80V, IE=0 IEBO - - 10 uA VEB=7V, IC=0 *VCE(sat) - - 1.0 V IC=3A, IB=0.3A *VBE(sat) - - 1.5 V IC=2A, IB=0.2A - - 1.0 V 60 - 300 *VBE(ON) *hFE Test Conditions VCE=5V, IC=500mA VCE=5V, IC=0.5A fT - 8 - MHz Cob - 40 - pF VCE=5V, IE=-0.5A VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of hFE Rank O Y GR Range 60 ~ 120 100 ~ 200 150 ~ 300 GESD880 Page: 1/2 ISSUED DATE :2005/12/12 REVISED DATE : Characteristics Curve VCE(sat) - IC hFE - IC 1 VCE=5V 100 10 0.001 0.01 0.1 1 10 Collector-Emitter Saturation Voltage VCE(sat) (V) DC Current Gain hFE 1000 IC/IB=10 0.1 0.01 0.001 0.001 0.01 Collector Current IC (A) Base-Emitter Saturation Voltage VBE(sat) (V) 10 IC/IB=10 1 0.1 0.001 0.01 0.1 1 0.1 0.01 0.001 0.4 10 VCE=5V 0.6 1 Cob - VCB 100 VCE=5V f=1Mhz Collector Output Capacitance Cob (pF) Transition Frequency fT (MHz) 0.8 Base-Emitter On Voltage VBE(on) (V) fT - IE 10 1 0.001 10 1 Collector Current IC (A) 100 1 IC - VBE(on) VBE(sat) - IC 10 0.1 Collector Current IC (A) Collector Current IC (A) 0.01 0.1 Emitter Current IE (A) 1 10 0.1 1 10 100 Collector-Base Voltage VCB (V) Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GESD880 Page: 2/2