ISSUED DATE :2005/05/06 REVISED DATE : GJ5706 NPN EPITAXIAL PLANAR SILICON TRANSISTOR Description The GJ5706 is designed high current switching applications. Features *Large current capacitance *Low collector-to-emitter saturation voltage *High-speed switching *High allowable power dissipation Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Absolute Maximum Ratings (Ta = 25 , unless otherwise specified) Symbol Ratings VCBO 80 VCES 80 VCEO 50 VEBO 6 IC 5 ICP 7.5 IB 1.2 Tj +150 TsTG -55 ~ +150 PD 0.8 15 PD(TC=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current(Pulse) Base Current Junction Temperature Storage Temperature Total Power Dissipation Electrical Characteristics (Rating at Ta=25 Symbol BVCBO BVCES BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE fT Cob ton (Turn-On Time) tstg (Storage Time) tf (Fall Time) GJ5706 Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Unit V V V V A A A W W ) Min. Typ. Max. Unit 80 80 50 6 200 - 400 15 35 300 20 1 1 135 240 1.2 560 - V V V V uA uA mV mV V MHz pF ns ns ns Test Conditions IC=10uA, IE=0 IC=100uA, RBE=0 IC=1mA, RBE= IE=10uA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 lC=1A, IB=50mA lC=2A, IB=100mA lC=2A, IB=100mA VCE=2V, IC=500mA VCE=10V, IC=500mA VCB=10V, f=1MHz See specified test circuit. See specified test circuit. See specified test circuit. Page: 1/3 ISSUED DATE :2005/05/06 REVISED DATE : Switching Time Test Circuit Characteristics Curve GJ5706 Page: 2/3 ISSUED DATE :2005/05/06 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ5706 Page: 3/3