GTM GM157

CORPORATION
GM157
Description
ISSUED DATE :2005/08/19
REVISED DATE :
PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
The GM157 is designed for general purpose switching and amplifier applications.
Features
-60 Volt VCEO
3 Amp continuous current
Low saturation voltage
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5
TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
IC
PD
Electrical Characteristics(Ta = 25
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
ton
toff
Min.
-80
-60
-5
70
100
80
40
100
-
Typ.
-150
-450
-0.9
-0.8
200
200
170
150
140
40
450
*Measured under pulse condition. Pulse width
Ratings
+150
-55~+150
-80
-60
-5
-3
-6
1.2
Unit
V
V
V
A
A
W
,unless otherwise noted)
Max.
Unit
Test Conditions
V
IC=-100uA , IE=0
V
IC=-10mA, IB=0
V
IE=-100uA ,IC=0
-100
nA
VCB=-60V, IE=0
-100
nA
VEB=-4V, IC=0
-300
mV
IC=-1A, IB=-100mA
-600
mV
IC=-3A, IB=-300mA
-1.25
V
IC=-1A, IB=-100mA
-1.0
V
VCE=-2V, IC=-1A
VCE=-2V, IC=-50mA
300
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-2V, IC=-2A
MHz
VCE=-5V, IC=-100mA, f=100MHz
30
pF
VCB=-10V, IE=0, f=1MHz
ns
VCC=-10V, IC=-500mA, IB1=IB2=-50mA
300 s, Duty Cycle
2%
Spice parameter data is available upon request for this device.
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CORPORATION
ISSUED DATE :2005/08/19
REVISED DATE :
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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