CORPORATION GM157 Description ISSUED DATE :2005/08/19 REVISED DATE : PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR The GM157 is designed for general purpose switching and amplifier applications. Features -60 Volt VCEO 3 Amp continuous current Low saturation voltage Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Electrical Characteristics(Ta = 25 Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob ton toff Min. -80 -60 -5 70 100 80 40 100 - Typ. -150 -450 -0.9 -0.8 200 200 170 150 140 40 450 *Measured under pulse condition. Pulse width Ratings +150 -55~+150 -80 -60 -5 -3 -6 1.2 Unit V V V A A W ,unless otherwise noted) Max. Unit Test Conditions V IC=-100uA , IE=0 V IC=-10mA, IB=0 V IE=-100uA ,IC=0 -100 nA VCB=-60V, IE=0 -100 nA VEB=-4V, IC=0 -300 mV IC=-1A, IB=-100mA -600 mV IC=-3A, IB=-300mA -1.25 V IC=-1A, IB=-100mA -1.0 V VCE=-2V, IC=-1A VCE=-2V, IC=-50mA 300 VCE=-2V, IC=-500mA VCE=-2V, IC=-1A VCE=-2V, IC=-2A MHz VCE=-5V, IC=-100mA, f=100MHz 30 pF VCB=-10V, IE=0, f=1MHz ns VCC=-10V, IC=-500mA, IB1=IB2=-50mA 300 s, Duty Cycle 2% Spice parameter data is available upon request for this device. 1/2 CORPORATION ISSUED DATE :2005/08/19 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2