CORPORATION G M A0 6 ISSUED DATE :2004/05/28 REVISED DATE : NPN SILICON TRANSISTOR Description The GMA06 is Amplifier Transistor. Package Dimension REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55~+150 Collector to Base Voltage VCBO 80 V Collector to Emitter Voltage VCEO 80 V Emitter to Base Voltage VEBO 4 V IC 500 mA PD 1.2 W Collector Current Total Power Dissipation at Ta=25 Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 80 - - V IC=100uA BVCEO 80 - - V IC=1mA BVEBO 4 - - V IE=100uA ICBO - - 100 nA VCB=80V ICEO - - 100 nA VCE=60V *VCE(sat) - - 250 mV IC=100mA, IB=10mA 1.2 V VBE(sat) - - 50 - *hFE2 50 - - fT 100 - - *hFE1 Test Conditions IC=100mA, VCE=1V VCE=1V, IC=10mA VCE=1V, IC=100mA MHz VCE=2V, IC=10mA, f=100MHz *Pulse Test:Pulse width 380us,Duty Cycle 2% 1/2 CORPORATION ISSUED DATE :2004/05/28 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671~4 FAX : 86-21-38950165 2/2