GTM GMBTA42

ISSUED DATE :2003/11/27
REVISED DATE :2005/01/21B
G M B TA 4 2
NP N EP ITAXIAL PL ANAR T RANS ISTO R
Description
The GMBTA42 is designed for high voltage transistor.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0
10
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Characteristics
Symbol
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55~+150
300
300
6
500
350
V
V
V
mA
mW
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
300
-
-
V
IC=100uA , IE=0
BVCEO
300
-
-
V
IC=1mA ,IB=0
BVEBO
6
-
-
V
IE=100uA ,IC=0
ICBO
-
-
100
nA
VCB=200V, IE=0
IEBO
-
-
100
nA
VEB=6V ,IC=0
Test Conditions
VCE(sat)
-
-
500
mV
IC=20mA, IB=2mA
VBE(sat)
-
-
900
mV
IC=20mA, IB=2mA
hFE1
25
-
-
VCE=10V, IC=1mA
hFE2
40
-
hFE3
40
-
-
VCE=10V, IC=30mA
fT
50
-
-
MHz
-
-
3
pF
Cob
Unit
VCE=10V, IC=10mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, f=1MHz
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ISSUED DATE :2003/11/27
REVISED DATE :2005/01/21B
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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