CORPORATION G M P S A2 7 ISSUED DATE :2004/08/12 REVISED DATE :2004/11/29B NPN SILICO N DARLING TON TRANSISTO R Description The GMPSA27 is designed for darlington applications requiring extremely high current gain at collector to 500mA. Package Dimensions D E S1 A TO-92 b1 S E A T IN G PLANE Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 L REF. e1 b e A S1 b b1 C C REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings at Ta = 25 Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCES 60 V Emitter to Base Voltage VEBO 10 V Collector Current IC 500 mA Total Power Dissipation PD 625 mW Characteristics Symbol BVCBO BVCES BVEBO ICBO ICES IEBO *VCE(sat) VBE(on) *hFE1 *hFE2 at Ta = 25 Min. 60 60 10 10K 10K Typ. - Max. 100 500 100 1.5 2 - Unit V V V nA nA nA V V Test Conditions IC=100uA ,IE=0 IC=100uA ,VBE=0 IE=10uA ,IC=0 VCB=50V, IE = 0 VCE=50V VEB=10V, Ic = 0 IC=100mA, IB=0.1mA VCE=5V ,IC=100mA VCE=5V, IC=10mA VCE=5V, IC=100mA Pulse Test: Pulse Width 380us, Duty Cycle 2% 1/2 CORPORATION ISSUED DATE :2004/08/12 REVISED DATE :2004/11/29B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2