GTM GSD2656

ISSUED DATE :2006/01/18
REVISED DATE :
GSD2656
NPN EPITAXIAL T RANSISTOR
Description
The GSD2656 is designed for general purpose amplifier applications.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
Ratings
+150
-55~+150
30
30
6
1
225
, unless otherwise noted)
Max.
Unit
BVCBO
30
-
-
V
IC=10uA, IE=0
BVCEO
30
-
-
V
IC=1mA, IB=0
BVEBO
6
-
-
V
IE=10uA, IC=0
ICBO
-
-
100
nA
VCB=30V, IE=0
Unit
V
V
V
A
mW
Test Conditions
IEBO
-
-
100
nA
VEB=6V, IC=0
VCE(sat)
-
-
350
mV
IC=500mA, IB=25mA
*hFE
120
-
500
*fT
-
400
-
MHz
VCE=2V, IC=100mA
Cob
-
5
-
pF
VCE=2V, IE=-100mA, f=100MHz
VCB=10V, f=1MHz
*Pulsed Test
Classification Of hFE
Rank
EUC
EUD
EUE
Range
120 ~ 200
160 ~ 300
250 ~ 500
GSD2656
Page: 1/2
ISSUED DATE :2006/01/18
REVISED DATE :
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSD2656
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