ISSUED DATE :2006/01/18 REVISED DATE : GSD2656 NPN EPITAXIAL T RANSISTOR Description The GSD2656 is designed for general purpose amplifier applications. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Electrical Characteristics (Ta = 25 Symbol Min. Typ. Ratings +150 -55~+150 30 30 6 1 225 , unless otherwise noted) Max. Unit BVCBO 30 - - V IC=10uA, IE=0 BVCEO 30 - - V IC=1mA, IB=0 BVEBO 6 - - V IE=10uA, IC=0 ICBO - - 100 nA VCB=30V, IE=0 Unit V V V A mW Test Conditions IEBO - - 100 nA VEB=6V, IC=0 VCE(sat) - - 350 mV IC=500mA, IB=25mA *hFE 120 - 500 *fT - 400 - MHz VCE=2V, IC=100mA Cob - 5 - pF VCE=2V, IE=-100mA, f=100MHz VCB=10V, f=1MHz *Pulsed Test Classification Of hFE Rank EUC EUD EUE Range 120 ~ 200 160 ~ 300 250 ~ 500 GSD2656 Page: 1/2 ISSUED DATE :2006/01/18 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSD2656 Page: 2/2