GTM GTT2623

Pb Free Plating Product
ISSUED DATE :2006/03/28
REVISED DATE :
GTT2623
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
170m
-2.0A
Description
The GTT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The GTT2623 is universally used for all commercial-industrial applications.
Features
*Low Gate Charge
*Low On-resistance
Package Dimensions
REF.
A
A1
A2
c
D
E
E1
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
3
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Millimeter
Min.
Max.
1.10 MAX.
0
0.10
0.70
1.00
0.12 REF.
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min.
Max.
0.45 REF.
0.60 REF.
0°
10°
0.30
0.50
0.95 REF.
1.90 REF.
Unit
V
V
A
A
A
W
W/
Tj, Tstg
Ratings
-30
±20
-2
-1.6
-20
1.2
0.01
-55 ~ +150
Symbol
Rthj-a
Value
110
Unit
/W
1/4
ISSUED DATE :2006/03/28
REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
-0.02
-
Gate Threshold Voltage
VGS(th)
-1.0
-
-3.0
V
VDS=VGS, ID=-250uA
gfs
-
2
-
S
VDS=-5V, ID=-2.0A
IGSS
-
-
±100
nA
VGS= ±20V
-
-
-1
uA
VDS=-30V, VGS=0
-
-
-25
uA
VDS=-24V, VGS=0
-
-
170
-
-
280
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=-250uA
Reference to 25 , ID=-1mA
VGS=-10V, ID=-2.0A
VGS=-4.5V, ID=-1.6A
Total Gate Charge2
Qg
-
2.8
4.5
Gate-Source Charge
Qgs
-
0.5
-
Gate-Drain (“Miller”) Change
Qgd
-
1.4
-
Td(on)
-
5
-
Tr
-
6
-
Td(off)
-
15
-
Tf
-
3
-
Input Capacitance
Ciss
-
150
240
Output Capacitance
Coss
-
42
-
Reverse Transfer Capacitance
Crss
-
32
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
-1.2
V
IS=-1.0A, VGS=0V
Reverse Recovery Time
Trr
-
20
-
ns
Reverse Recovery Charge
Qrr
-
13
-
nC
IS=-2.0A, VGS=0V
dI/dt=100A/ s
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
nC
ID=-2.0A
VDS=-24V
VGS=-4.5V
ns
VDS=-15V
ID=-1.0A
VGS=-10V
RG=3.3
RD=15
pF
VGS=0V
VDS=-25V
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
2
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t
5sec; 180 /W when mounted on Min. copper pad.
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ISSUED DATE :2006/03/28
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2006/03/28
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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