HITTITE HMC-C002

HMC-C002
v01.1105
WIDEBAND LNA MODULE, 2 - 20 GHz
9
Features
AMPLIFIERS - CONNECTORIZED MODULES
Noise Figure: 2 dB @ 8 GHz
Flat Gain: 13 dB ± 0.5 dB
P1dB Output Power: +18 dBm @ 8 GHz
50 Ohm Matched Input/Output
Regulated Supply and Bias Sequencing
Typical Applications
Hermetically Sealed Module
The HMC-C002 Wideband LNA is ideal for:
Field Replaceable SMA connectors
• Telecom Infrastructure
-55 to +85˚C Operating Temperature
• Microwave Radio & VSAT
• Military & Space
General Description
• Test Instrumentation
The HMC-C002 is a GaAs MMIC PHEMT Low Noise
Distributed Amplifier in a miniature, hermetic module
with replaceable SMA connectors which operates
between 2 and 20 GHz. The self-biased amplifier
provides 13 dB of gain, 2 to 3 dB noise figure and up
to +18 dBm of output power at 1 dB gain compression
while requiring a single +12V supply. Gain flatness
is excellent from 2 - 18 GHz making the HMC-C002
ideal for EW, ECM RADAR and test equipment applications. The wideband amplifier I/Os are internally
matched to 50 Ohms and are internally DC blocked.
• Fiber Optics
Functional Diagram
Electrical Specifications, TA = +25° C, Vs= +11.6V to +12.4V
Parameter
Min.
Frequency Range
Gain
Max.
Min.
12
Typ.
Max.
Min.
6.0 - 12.0
14
11
13
10
Max.
Units
GHz
12
dB
±.025
Gain Variation Over Temperature
0.008
0.015
0.008
0.015
0.008
0.015
dB/ °C
Noise Figure
2.5
4.5
2.0
3.0
3.0
5.0
dB
Input Return Loss
17
18
18
Output Return Loss
12
15
8
dB
12
dBm
15
18
±0.5
Typ.
12.0 - 20.0
Gain Flatness
Output Power for 1 dB Compression (P1dB)
9-6
Typ.
2.0 - 6.0
13
16
±0.5
9
dB
dB
Saturated Output Power (Psat)
21.5
21
19
dBm
Output Third Order Intercept (IP3)
26.5
26
23
dBm
Spurious Response
-50
-60
-60
dBc
Supply Current
75
75
75
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-C002
v01.1105
WIDEBAND LNA MODULE, 2 - 20 GHz
20
18
15
16
14
5
12
S21
0
GAIN (dB)
RESPONSE (dB)
10
S11
S22
-5
-10
10
8
+25 C
+85 C
6
-15
-20
4
-25
2
-30
-55 C
0
0
2
4
6
8
10
12
14
16
18
20
22
0
24
2
4
6
FREQUENCY (GHz)
10
12
14
16
18
20
22
Output Return Loss vs. Temperature
0
0
-5
-5
+25 C
+85 C
-55 C
-10
RETURN LOSS (dB)
RETURN LOSS (dB)
8
FREQUENCY (GHz)
Input Return Loss vs. Temperature
-15
-20
-25
+25 C
+85 C
-55 C
-10
-15
-20
-25
-30
-30
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
FREQUENCY (GHz)
8
10
12
14
16
18
20
22
18
20
22
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
10
9
-10
-20
+25 C
+85 C
-55 C
8
+25 C
+85 C
-55 C
NOISE FIGURE (dB)
ISOLATION (dB)
9
Gain vs. Temperature
AMPLIFIERS - CONNECTORIZED MODULES
Gain & Return Loss
-30
-40
7
6
5
4
3
2
-50
1
-60
0
0
2
4
6
8
10
12
14
FREQUENCY (GHz)
16
18
20
22
0
2
4
6
8
10
12
14
16
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9-7
HMC-C002
v01.1105
9-8
Psat vs. Temperature
24
24
22
22
20
20
18
18
16
16
Psat (dBm)
P1dB (dBm)
P1dB vs. Temperature
14
12
10
8
+25 C
12
+85 C
10
-55 C
6
+85 C
-55 C
4
14
8
+25 C
6
4
2
2
0
0
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
FREQUENCY (GHz)
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Absolute Maximum Ratings
Output IP3 vs. Temperature
30
Bias Supply Voltage (Vs)
+11 Vdc to +13 Vdc
RF Input Power (RFin)
+23 dBm
24
Storage Temperature
-65 to +150 °C
22
Operating Temperature
-55 to +85 °C
28
26
OIP3 (dBm)
AMPLIFIERS - CONNECTORIZED MODULES
9
WIDEBAND LNA MODULE, 2 - 20 GHz
20
18
+25 C
+85 C
-55 C
16
14
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
12
10
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Pin Descriptions
Pin Number
Function
Description
1
RFIN &
RF Ground
RF input connector, SMA female, field replaceable.
This pin is AC coupled and matched to 50 Ohms
from 2.0 - 20.0 GHz.
2
Vs
Power supply voltage for the amplifier.
3
RFOUT &
RF Ground
RF output connector, SMA female. This pin is AC coupled
and matched to 50 Ohms from 2.0 - 20.0 GHz.
4
GND
Power supply ground.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-C002
v01.1105
WIDEBAND LNA MODULE, 2 - 20 GHz
9
AMPLIFIERS - CONNECTORIZED MODULES
Outline Drawing
NOTES:
1. PACKAGE, LEADS, COVER MATERIAL: KOVAR™
2. BRACKET MATERIAL: ALUMINUM
3. PLATING: ELECTROLYTIC GOLD 50 MICROINCHES MIN., OVER
ELECTROLYTIC NICKEL 75 MICROINCHES MIN.
4. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. TOLERANCES ±.005 [0.13] UNLESS OTHERWISE SPECIFIED.
6. FIELD REPLACEABLE SMA CONNECTORS.
TENSOLITE 5602 - 5CCSF OR EQUIVALENT.
7. TO MOUNT MODULE TO SYSTEM PLATFORM REPLACE 0 -80
HARDWARE WITH DESIRED MOUNTING SCREWS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9-9