Certificate TH97/10561QM 1N5819W SURFACE MOUNT SCHOTTKY BARRIER DIODE Low Power Loss, Low Forward Voltage Drop High Efficiency High Surge Capability High Current Capability Pb / RoHS Free * * * * 1.15 1.05 MECHANICAL DATA : 0.135 0.127 1.65 1.55 2.7 2.6 0.6 0.5 SOD-123 FEATURES : * * * * * * Certificate TW00/17276EM Case: SOD-123, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.01 grams (approx.) 3.9 37 Dimensions in millimeters Absolute Maximum Ratings (Ta = 25 °C) Parameter Symbol Value Unit Maximum Peak Repetitive Reverse Voltage VRRM 40 V Maximum Working Peak Reverse Voltage at I R = 1 mA VRWM 40 V VR 40 V VR(RMS) 28 V IF 1 A IFSM 25.0 A Ptot 450 mW RӨJA 222 °C/W TJ 125 °C TSTG -55 to + 125 °C Maximum DC Blocking Voltage Maximum RMS Reverse Voltage Maximum Average Forward Current Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Power Dissipation Typical Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Electrical Characteristics Parameter Reverse Breakdown Voltage (Ta = 25 °C) Symbol V(BR)R Forward Voltage (Note 1) VF Reverse Leakage Current (Note 1) IRM Typical Junction Capacitance CJ Test Condition Min. Typ. Max. Unit 40 - - V IF = 0.1 A - - 0.32 IF = 1.0 A - - 0.45 IF = 3.0 A - - 0.75 VR = 40 V - - 1 mA IR = 1.0 mA V VR = 40 V, Ta = 100 °C - - 10.0 mA VR = 4 V - 10.0 50.0 μA VR = 4 V, Ta = 100 °C - 1.0 2.0 mA VR = 6 V - 15.0 75.0 μA VR = 6 V, Ta = 100 °C - 1.5 3.0 mA at VR = 4V, f = 1MHz - 110 - pF Note : (1) Pulse Test: Pulse width ≤200 μs, Duty Cycle ≤2%. Page 1 of 1 Rev. 00 : August 9, 2007