MICROSEMI GC4373

GC4310 – GC4375
CONTROL DEVICES
High Speed NIP Diodes
®
TM
RoHS Compliant
KEY FEATURES
The GC4300 series are high speed (anode base) NIP diodes made with high
resistivity reverse epitaxial silicon material. These diodes are passivated with
silicon dioxide for high stability and reliability and have been proven by
thousands of device hours in high reliability systems.
 Available as packaged devices or
as chips for hybrid applications
 Low Loss
 Suitable for applications to 18Ghz
The NIP diode is used when negative bias current is available for forward
conduction and will operate with as little as -10 mA bias. These diodes have
somewhat faster speeds as compared with similar PIN diodes.
 High Speed
 Low Insertion Loss
These devices can withstand storage temperatures from -65°C to +200°C and
will operate over the range from -55°C to +150°C. All devices meet or exceed
military environmental specifications of MIL-PRF-19500.
 High Isolation
 Reverse Polarity for Applications
with special Bias Considerations
This series of diodes meets RoHS requirements per EU Directive
2002/95/EC. The standard terminal finish is gold unless otherwise specified.
Consult the factory if you have special requirements.
 RoHS Compliant
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DESCRIPTION
1
APPLICATIONS
The GC4300 series can be used in RF circuits as an on/off element, as a
switch, or as a current controlled resistor in attenuators extending over the
frequency range from UHF through Ku band.
Switch applications include high speed switches (ECM systems), TR witches,
channel or antenna selection switches (telecommunications), duplexers
(radar) and digital phase shifters (phased arrays).
APPLICATIONS/BENEFITS
 RF / Microwave Switching
The GC4300 series are also used as passive and active limiters for low to
moderate RF power levels.
 Duplexers
 Digital Phase Shifting
Attenuator type applications include amplitude modulators, AGC attenuators,
power levelers and level set attenuators.
 Phased Array Radar
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Value
Unit
IR
0.5
uA
Storage Temperature
TSTG
-65 to +200
ºC
Operating Temperature
TOP
-55 to +150
ºC
Maximum Leakage Current
@80% of Minimum Rated VB
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change, consult the factory for further information.
GC4310 – GC4375
Symbol
1
These devices are supplied with gold
plated terminations.
These devices are ESD sensitive and must be handled using ESD precautions.
Copyright  2007
Rev: 2009-02-02
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
GC4310 – GC4375
CONTROL DEVICES
High Speed NIP Diodes
®
TM
RoHS Compliant
.
DEVICE ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)E
@20 mA
TL(nS)
IR=6mA/IF=10mA
Thermal
Resistance
θ (˚C/W)
(Max)
(Typ)
(Max)
VB(V)
CJ (pF) 2
RS(Ω) 3
(Min)
(Max)
IR=10μA
@VR=10V
GC4371
70
0.1
0.9
70
70
GC4372
70
0.2
0.7
70
70
GC4373
70
0.3
0.6
70
60
GC4374
70
0.4
0.5
70
50
GC4375
70
0.5
0.4
70
40
GC4310
100
0.06
1.5
170
80
GC4311
100
0.1
1
170
70
GC4312
100
0.2
0.9
170
70
GC4313
100
0.3
0.8
170
60
GC4314
100
0.4
0.6
170
50
GC4315
100
0.5
0.4
170
40
GC4320
200
0.06
1.5
200
80
GC4321
200
0.1
1.2
200
70
GC4322
200
0.2
1
200
70
GC4323
200
0.3
0.9
200
60
GC4324
200
0.4
0.8
200
50
GC4325
200
0.5
0.5
200
40
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Model Number 1
Notes:
1. This series of devices is available in standard case styles 00, 30, and 35. Many other styles are available on request.
2. Capacitance is measured at 1 MHz.
3. Resistance is measured AT 1 GHz using transmission loss techniques.
The junction capacitance specified is for a 00 (chip) package style. Standard wafer evaluation and
characterization is completed using a style 30 package. Diodes are available in many case styles. Each
type offers performance trade-offs. The proper choice of package style depends on the end application and
operating environment. Consult factory for assistance. Standard polarity (PIN) diodes and higher voltage
PIN and NIP diodes are also available. (See data sheets for GC4200, GC4400, and GC4500 series
respectively.)
ELECTRICAL
Copyright  2007
Rev: 2009-02-02
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
GC4310 – GC4375
CONTROL DEVICES
High Speed NIP Diodes
®
TM
RoHS Compliant
TYPICAL RS CURVES
TYPICAL RS CURVES
www.MICROSEMI.com
TYPICAL RS CURVES
GRAPHS
Copyright  2007
Rev: 2009-02-02
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 3
GC4310 – GC4375
CONTROL DEVICES
High Speed NIP Diodes
®
TM
RoHS Compliant
PACKAGE STYLE 30
Dimensions vary by model. Consult factory for details.
PACKAGE STYLE 35
PACKAGE STYLE 115
www.MICROSEMI.com
PACKAGE STYLE 00
MECHANICAL
50 OHM BOLT CHANNEL MODULE
OTHER PACKAGE STYLES AVAILABLE ON REQUEST
CONSULT FACTORY
Copyright  2007
Rev: 2009-02-02
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 4