PDB-V110 Blue Enhanced Photovoltaic Silicon Photodiode .084 [2.13] .076 [1.93] ±.005 [0.13] .053 [1.35] PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ANODE INDEX 2X Ø.017 [0.43] ANODE 120° VIEWING ANGLE .657 [16.69] .643 [16.33] .484 [12.29] CATHODE .596 [15.14] .584 [14.83] 2X .50 [12.7] CHIP DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] .005 [0.13] MAX EPOXY ABOVE PACKAGE .408 [10.36] CERAMIC PACKAGE .402 [10.21] CERAMIC PACKAGE .371 [9.42] ACTIVE AREA .391 [9.93] ACTIVE AREA DESCRIPTION APPLICATIONS The PDB-V110 is a blue enhanced PIN silicon photodiode in a photovoltaic mode, packaged in a ceramic package. • Instrumentation • Industrial • Medical SPECTRAL RESPONSE ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED 0.20 0.10 ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ISC ID RSH CJ lrange R VBR NEP tr CHARACTERISTIC Short Circuit Current Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Noise Equivalent Power Response Time** TEST CONDITIONS H = 100 fc, 2850 K VR = 10 mV VR = 10 mV VR = 0 V, f = 1 MHz Spot Scan l= 450 nm V, VR = 0 V I = 10 μA VR = 0V @ l=Peak RL = 50 Ω,VR = 0 V RL = 50 Ω,VR = 10 V MIN 0.9 30 350 0.15 20 TYP 1.2 200 50 10000 MAX 333 12000 1100 0.17 30 2X10-14 190 13 UNITS mA pA MW pF nm A/W V W/ √ Hz nS **Response time of 10% to 90% is specified at 660nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. www.lasercomponents.com Issue: 08/06 / V1 / HW / api/si-pin/blue-photo-v/ pdb-v110.pdf Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, [email protected] Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, [email protected] 1150 1100 250 Wavelength (nm) 1050 0.00 * 1/16 inch from case for 3 seconds max. 950 °C 1000 +240 0.30 900 +60 0.40 850 Soldering Temperature* -20 °C °C 800 TS +80 0.50 750 Operating Temperature -20 0.60 700 TO V 650 Storage Temperature 75 600 TSTG UNITS 550 Reverse Voltage MAX 500 VBR MIN 300 PARAMETER Responsivity (A/W) SYMBOL 0.70 450 Low noise Blue enhanced High shunt resistance High response 400 • • • • 350 FEATURES