BT100-8 Sensitive Gate Silicon Controlled Rectifiers Features ◇ Repetitive Peak Off-State Voltage : 600V ◇ R.M.S On-State Current (IT(RMS)=0.8 A) ◇ Low On-State Voltage (1.2V(Typ.)@ITM) General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. Absolute Maximum Ratings (TJ=25℃ unless otherwise specified) Symbol Parameter Condition Ratings Units 600 V VDRM Repetitive Peak Off-state Voltage IT(AV) Average On-State Current Half Sine Wave : TC =74℃ 0.5 A IT(RMS) R.M.S On-State Current All Conduction Angle 0.8 A ITSM Surge On-State Current 1/2 Cycle, 60Hz, Sine Wave NonRepetitive 10 A I2 t I²t for Fusing t = 8.3ms 0.415 A² S PGM Forward Peak Gate Power Dissipation TA=25℃, Pulse Width≤1.0㎲ 2 W PG(AV) Forward Average Gate Power Dissipation TA=25℃, t=8.3ms 0.1 W IFGM Forward Peak Gate Current 1 A VRGM Reverse Peak Gate Voltage 5.0 V TJ TSTG Operating Junction Temperature -40 ~ 125 ℃ Storage Temperature -40 ~ 150 ℃ 1 BT100-8 Electrical Characteristics Ratings Symbol Items Conditions VAK=VDRM, Unit or VRRM:RGK=1000Ω Tc=25℃ Tc=125℃ IDRM Repetitive Peak OffState Current VTM Peak On-State Voltage(1) IGT Gate Trigger Current(2) VGT Gate Trigger Voltage(2) VGD Non-Trigger Gate Voltage(1) VAK=12V, RL=100Ω dv/dt Critical Rate of Rise Off-State Voltage di/dt (ITM=1A, Peak) Min Typ Max ━ ━ ━ ━ 10 200 ㎂ 1.7 V ━ 1.2 VAK=6V, RL=100Ω Tc=25℃ Tc=-40℃ ━ ━ ━ ━ 200 500 ㎂ Tc=25℃ Tc=-40℃ ━ ━ ━ ━ 0.8 1.2 V VD=7V, RL=100Ω 0.2 ━ ━ V VD=Rated VDRM, Exponential wave-form RGK=1000Ω TJ=125℃ 500 800 ━ V/㎲ Critical Rate of Rise Off-State Voltage ITM=2A ; Ig=10mA ━ ━ 50 A/㎲ Holding Current VAK=12V, Gate Open Initiating Current=50mA Tc=25℃ Tc=-40℃ 5.0 10 mA Rth(j-c) Thermal Impedance Junction to case ━ ━ 60 ℃/W Rth(j-a) Thermal Impedance Junction to Ambient ━ ━ 150 ℃/W IH Tc=125℃ ━ ━ 2 ━ ※ Notes : 1. Pulse Width ≤1.0ms, Duty cycle ≤1% 2. Does not include RGK in measurement. 2 BT100-8 3 BT100-8 4 BT100-8 • TO-92 5