LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE L2SC1623*LT1 ƽHigh Voltage: VCEO = 50 V. ƽEpitaxial planar type. 3 ƽPNP complement: L2SA812 ƽPb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Shipping L5 3000/Tape&Reel L5 (Pb-Free) 3000/Tape&Reel L6 3000/Tape&Reel L6 (Pb-Free) 3000/Tape&Reel L7 3000/Tape&Reel L7 (Pb-Free) 3000/Tape&Reel L2SC1623QLT1 L2SC1623QLT1G L2SC1623RLT1 L2SC1623RLT1G L2SC1623SLT1 L2SC1623SLT1G 2 Marking Device SOT– 23 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 7 V IC 150 mAdc Symbol Max Unit 225 mW 1.8 mW/oC Collector current-continuoun THERMAL CHARATEERISTICS Characteristic Total Device Dissipation FR-5 Board, (1) PD o TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient R θJA Total Device Dissipation PD o Alumina Substrate, (2) TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R θJA Tj ,Tstg 556 o C/W 300 mW 2.4 mW/oC 417 -55 to +150 o C/W o C L2SC1623-1/5 LESHAN RADIO COMPANY, LTD. L2SC1623*LT1 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol Min Typ Max Unit - - 0.1 0.1 µA µA 120 - 560 OFF CHARACTERISTICS Collector Cutoff Current (VCB=60V) Emitter Cutoff Current (VBE=5V) I I CBO EBO ON CHARACTERISTICS DC Current Gain (IC=1.0mA, VCE=6V) Collector-Emitter Saturation Voltage (IC=100mA,IB=10mA) Base-Emitter Saturation Voltage (IC=100mA,IB=10mA) hFE Base -Emitter On Voltage IC=1mA,VCE=6.0V) V CE(sat) - 0.15 0.3 V VBE(sat) - 0.86 1.0 V 0.55 0.62 0.65 V V BE SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (VCE=6.0V,IE =1.0MHz) Output Capacitance(VCE = 6V, IE=0, f=1.0MHz) Ft - 250 - MHz Cob - 3 - pF hFE Values are classified as followes NOTE: * hFE Q 120~270 R 180~390 S 270~560 L2SC1623-2/5 LESHAN RADIO COMPANY, LTD. L2SC1623*LT1 Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( ) 50 I C, COLLECTOR CURRENT (mA) 10 1 25°C – 55°C 50 T A = 100° C I C, COLLECTOR CURRENT (mA) 20 2 0.50mA 100 VCE= 6 V 0.5 T A = 25°C 80 60 40 20 0.2 0.1 0 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 0 –1.6 0.4 V BE , BASE TO EMITTER VOLTAGE(V) Fig.3 Grounded emitter output characteristics( ) 1.2 1.6 2.0 Fig.4 DC current gain vs. collector current ( ) 10 I C, COLLECTOR CURRENT (mA) 0.8 V CE , COLLECTOR TO EMITTER VOLTAGE (V) 500 h FE, DC CURRENT GAIN 8 6 4 2 200 100 50 20 0 0 4 8 12 16 10 20 0.2 0.5 V CE , COLLECTOR TO EMITTER VOLTAGE (V) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) h FE, DC CURRENT GAIN 200 100 50 20 10 0.2 0.5 1 2 5 10 20 50 I C, COLLECTOR CURRENT (mA) 100 200 2 5 10 20 50 100 200 Fig.6 Collector-emitter saturation voltage vs. collector current Fig.5 DC current gain vs. collector current ( ) 500 1 I C, COLLECTOR CURRENT (mA) 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 I C, COLLECTOR CURRENT (mA) L2SC1623–3/5 LESHAN RADIO COMPANY, LTD. L2SC1623*LT1 Fig.8 Collector-emitter saturation voltage vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 I C, COLLECTOR CURRENT (mA) 100 50 –5 –10 –20 –50 –100 I E, EMITTER CURRENT (mA) C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) f r , TRANSITION FREQUENCY(MHz) 200 –2 5 10 20 50 100 Fig.10 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage 500 –1 2 I C, COLLECTOR CURRENT (mA) Fig.9 Gain bandwidth product vs. emitter current –0.5 1 20 10 5 2 1 0.2 0.5 1 2 5 10 20 50 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) C c-r bb, BASE COLLECTOR TIME CONSTANT( ps) Fig.11 Base-collector time constant vs.emitter current 200 100 50 20 10 –0.2 –0.5 –1 –2 –5 –10 I E, EMITTER CURRENT (mA) L2SC1623–4/5 LESHAN RADIO COMPANY, LTD. L2SC1623*LT1 SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm L2SC1623–5/5