LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277AT1 High frequency switching z Features 1) Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 1 CATHODE SOD–523 2 ANODE Device Marking LBA277AT1 = 1 Absolute maximum ratings (TA=25°C) Parameter Symbol Limits Unit DC reverse voltage VR 35 V DC forward current IF 100 mA Junction temperature Tj 125 °C Storage temperature T stg -55~+125 °C Electrical characteristics (TA=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF – – 1.0 V IF=10mA Capacitance between terminals IR – – 10 nA VR=25V Forward operating resistance CT – – 1.2 pF VR=6V, f =1MHz Reverse current rF – – 0.9 Ω IF=2mA, f =100MHz LBA277AT1–1/3 LESHAN RADIO COMPANY, LTD. LBA277AT1 Electrical characteristic curves (T A=25 °C) 1 10.0 REVERSE CURRENT : IR (nA) FORWARD CURRENT : IF(mA) 100m 10m 1m 100 10 1 100n 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.0 0.1 0 1.1 FORWARD VOLTAGE : VF (V) CAPACITANCE BETWEEN TERMINALS : CT (pF) FORWARD OPERATING RESISTANCE : r F (Ω) 0.5 0.2 2 5 30 40 50 Fig. 2 Reverse characteristics f=100MHz 0 1 20 REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics 1.0 10 10 FORWARD CURRENT : IF (mA) Fig. 4 Forward operating resistance characteristics 3 2 1 0 0 10 20 30 REVERSE VOLTAGE : VR (V) Fig. 3 Capacitance between terminals characteristics LBA277AT1-2/3 LESHAN RADIO COMPANY, LTD. LBA277AT1 SOD–523/SC–79 NOTES: 1. DIMENSIONING AND TOLERANCING PER A ANSI Y14.5M, 1982. X 2. CONTROLLING DIMENSION: MILLIMETERS. Y B DIM D 2 PL .08(.003) M T X Y C J s K T SEATING PLANE MILLIMETERS MIN MAX INCHES MIN MAX A 1.10 1.30 0.043 0.051 B 0.70 0.90 0.028 0.035 C D 0.50 0.25 0.70 0.35 0.020 0.010 0.028 0.014 J K 0.07 0.15 0.20 0.25 0.0028 0.006 0.0079 0.010 S 1.50 1.70 0.059 0.067 LBA277AT1-3/3