MICRO-ELECTRONICS M2012G

ELECTRONICS
MICRO
M2012G
HIGH BRIGHTNESS
STANDARD GREEN
SURFACE LIGHTING
FEATURES:
AlGaInP/GaAs Standard Green Chip
Green Diffused Lens
Low Power Requirements
Wide Viewing Angle
ABSOLUTE MAXIMUM RATINGS
Power dissipation/Chip
Continuous Forward Current/Chip
Peak Forward Current/Chip
(*Pulse Width = 1ms , Duty Ratio = 1/10)
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Solder Temperature (1/16 Inch from body)
Maximum Soldering Time(≤260°C)
(Ta=25°C)
Pd
IF
*IFP
VR
Topr
Tstg
SYMBOL
Forward Voltage/Chip
VF
Reverse Current/Chip
IR
Peak Wavelength
λp
Dominant Wavelength
λd
Spectral Line Half Width
Δλ
Luminous Intensity
IV
5V
-20 to +80°C
-25 to +85°C
260℃
5 sec
ELECTRO-OPTICAL CHARACTERISTICS
PARAMETER
60mW
20mA
100mA
(Ta=25°C)
MIN
TYP
MAX
UNIT
CONDITIONS
2.1
2.8
V
IF=20mA
100
μA
VR=5V
nm
IF=20mA
nm
IF=20mA
20
nm
IF=20mA
15
mcd
IF=10mA/Chip
564
558
5
562
566
16/5/2005
Sheet 1 of 2
M2012G
16/5/2005
Sheet 2 of 2