20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD July 2007 - Rev 24-Jul-07 Features Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout General Description Mimix Broadband’s three stage 20.0-40.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 20.0 dB with a noise figure of 2.0 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +7.0 VDC 70 mA +12 dBm -65 to +165 OC -55 to MTTF Table 1 MTTF Table 1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) 2 @ 22.0-36.0 GHz Output Return Loss (S22) 2 @ 22.0-36.0 GHz Small Signal Gain (S21)2 Gain Flatness ( S21) Reverse Isolation (S12) 2 Noise Figure (NF)2 @ 24.0-40.0 GHz Output Power for 1 dB Compression (P1dB) Output Third Order Intercept Point (OIP3) Drain Bias Voltage (Vd) Supply Current (Id) (Vd=3.0V or 5.0V) Units GHz dB dB dB dB dB dB dBm dBm VDC mA Min. 20.0 6.0 4.0 12.0 30.0 - Typ. 12.0 10.0 20.0 +/-4.0 45.0 2.0 +9.0 +16.0 +3.0 35 Max. 40.0 +5.0 50 (2) Unless otherwise indicated min/max over 20.0-40.0 GHz and biased at Vd=5V, Id=50mA. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 7 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD July 2007 - Rev 24-Jul-07 26 24 22 20 18 16 14 12 10 8 6 4 2 0 18.0 XL1000-BD Vd=3.0 V Id=35 mA ~1000 Devices XL1000-BD Vd=3.0 V Id=35 mA ~1000 Devices Reverse Isolation (dB) Gain (dB) Low Noise Amplifier Measurements 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 18.0 20.0 22.0 24.0 26.0 Frequency (GHz) Max Median Mean Min Max XL1000-BD Vd=3.0 V Id=35 mA ~1000 Devices Output Return Loss (dB) Input Return Loss (dB) -5 34.0 36.0 38.0 40.0 Median Mean 36.0 38.0 40.0 -3sigma -15 -20 -25 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 -5 -10 -15 -20 -25 -30 18.0 20.0 22.0 24.0 26.0 Frequency (GHz) Max Median 28.0 30.0 32.0 34.0 Frequency (GHz) Mean -3sigma Max XL1000-BD Vd=3.0 V Id=35 mA ~130 Devices Median Mean -3sigma XL1000-BD Vd=3.0 V Id=35 mA ~100 Devices 13.0 5.0 12.0 4.5 11.0 4.0 Noise Figure (dB) Output Power Psat (dBm) 32.0 0 -10 10.0 9.0 8.0 7.0 6.0 5.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 4.0 3.0 18.0 30.0 XL1000-BD Vd=3.0 V Id=35 mA ~1000 Devices 0 -30 18.0 28.0 Frequency (GHz) 0.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 20.0 22.0 24.0 26.0 40.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 Frequency (GHz) Frequency (GHz) Max Max Median Mean Median Mean -3sigma -3sigma Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 7 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD July 2007 - Rev 24-Jul-07 Low Noise Amplifier Measurements (cont.) XL1000-BD Vd=5.0 V Id=50 mA ~19,550 Devices Reverse Isolation (dB) Gain (dB) XL1000-BD Vd=5.0 V Id=50 mA ~19,300 Devices 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 18.0 20.0 22.0 24.0 26.0 Frequency (GHz) Max Median Mean -3sigma +3sigma Output Return Loss (dB) Input Return Loss (dB) -5 -15 -20 -25 -30 -35 34.0 36.0 38.0 40.0 Median Mean 36.0 38.0 40.0 36.0 38.0 40.0 -3sigma 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 -5 -10 -15 -20 -25 -30 -35 -40 18.0 20.0 22.0 24.0 26.0 Max Median 28.0 30.0 32.0 34.0 Frequency (GHz) Frequency (GHz) Mean Max -3sigma XL1000-BD Vd=5.0 V Id=50 mA ~130 Devices Median Mean -3sigma XL1000-BD Vd=5.0 V Id=50 mA ~4170 Devices 16.0 5 15.0 4.5 Output Power Psat (dBm) 32.0 0 -10 4 Noise Figure (dB) 14.0 13.0 12.0 11. 0 10.0 9.0 8.0 3.5 3 2.5 2 1.5 1 0.5 7.0 6.0 18.0 30.0 XL1000-BD Vd=5.0 V Id=50 mA ~19,300 Devices XL1000-BD Vd=5.0 V Id=50 mA ~19,550 Devices 0 -40 18.0 28.0 Frequency (GHz) 0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 Frequency (GHz) Max Median Mean 36.0 38.0 20.0 22.0 24.0 26.0 40.0 28.0 30.0 32.0 34.0 Frequency (GHz) Max Median Mean -3sigma -3sigma Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 7 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD July 2007 - Rev 24-Jul-07 S-Parameters Typical S-Parameter Data for XL1000-BD Vd=3 V Id=35 mA Frequency (GHz) 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 S11 Mag dB -2.200 -2.399 -7.105 -16.496 -13.705 -12.473 -12.081 -12.038 -12.956 -14.269 -15.397 -17.700 -19.336 -20.634 -21.606 -21.541 -18.765 -15.442 -12.610 -10.623 -7.853 -6.345 -4.936 S21 Ang º Mag dB -172.1 7.284 133.1 16.781 25.6 22.182 -158.8 21.456 125.9 20.991 86.8 20.832 52.9 20.926 27.4 21.015 8.6 20.987 -9.2 20.854 -25.1 20.628 -32.6 20.224 -41.1 19.788 -59.7 19.509 -86.6 19.002 -110.7 18.582 -126.6 18.293 -152.7 17.991 -169.7 17.705 173.2 17.369 163.4 16.982 152.6 16.304 139.4 15.469 S12 Angº Mag dB 32.8 -54.177 -9.0 -51.411 -93.5 -53.098 -167.2 -53.707 153.4 -52.904 122.1 -50.363 89.4 -48.447 60.0 -47.146 31.1 -46.486 1.8 -45.888 -24.1 -43.938 -49.5 -44.948 -72.8 -44.741 -95.9 -44.813 -118.9 -43.798 -139.4 -43.461 -158.0 -43.458 173.3 -44.577 159.0 -46.372 139.1 -44.693 115.8 -45.551 94.6 -45.794 73.2 -47.691 S22 Angº Mag dB 165.1 -3.618 126.6 -4.679 51.8 -5.369 -1.3 -6.741 -40.7 -7.966 -74.6 -9.227 -102.1 -10.152 -129.2 -10.567 -143.7 -10.909 -165.1 -11.395 -165.8 -12.052 153.4 -13.273 139.6 -14.044 132.0 -14.985 122.4 -16.398 113.9 -17.350 86.6 -17.210 85.5 -17.880 68.5 -17.598 57.7 -16.893 24.5 -14.959 8.7 -14.213 -18.2 -13.011 Angº -121.8 -56.4 8.5 51.4 105.7 173.6 -144.8 -88.5 -28.7 18.1 82.0 153.0 -136.2 -68.6 -14.9 54.3 142.7 -158.5 -113.4 -45.5 3.2 68.5 135.0 S22 Mag dB -3.453 -4.345 -4.854 -6.249 -7.361 -8.568 -9.431 -9.959 -10.403 -11.048 -11.936 -12.946 -13.737 -14.992 -16.501 -17.747 -17.865 -19.936 -21.248 -21.347 -19.655 -19.338 -17.564 Angº -122.3 -56.8 6.6 49.5 104.0 174.2 -142.6 -84.0 -22.0 27.4 93.6 167.7 -119.1 -48.2 12.0 87.3 164.5 -128.8 -65.2 -1.9 33.6 92.3 151.6 Typical S-Parameter Data for XL1000-BD Vd=5 V Id=50 mA Frequency (GHz) 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 S11 Mag dB -2.600 -3.409 -10.078 -15.538 -14.868 -14.383 -14.351 -14.446 -15.816 -17.560 -19.092 -22.798 -26.012 -26.152 -24.241 -21.954 -19.416 -15.716 -13.036 -11.444 -8.718 -7.306 -5.717 Ang º -172.8 126.2 -1.0 -156.2 130.9 87.3 48.6 19.7 -0.4 -20.7 -41.7 -51.1 -68.9 -108.3 -147.9 -166.9 -169.0 172.5 167.1 161.2 151.7 145.2 135.2 S21 Mag dB 9.028 18.842 24.224 23.310 22.707 22.544 22.572 22.613 22.458 22.178 21.859 21.171 20.570 20.086 19.426 18.909 18.548 18.136 17.783 17.463 17.153 16.619 15.988 Angº 27.5 -17.5 -105.0 -172.1 147.5 115.5 82.3 52.2 22.4 -7.4 -33.7 -59.0 -82.0 -104.4 -126.9 -147.0 -164.7 173.7 154.8 136.3 114.6 94.8 74.1 S12 Mag dB -54.509 -53.271 -57.935 -56.605 -56.413 -53.163 -51.183 -49.459 -48.784 -48.461 -45.980 -47.457 -47.358 -46.965 -45.662 -45.317 -45.776 -46.026 -48.076 -45.494 -47.150 -47.596 -49.537 Angº 165.0 124.2 67.3 10.8 -32.4 -72.0 -99.4 -126.2 -139.9 -159.9 -171.2 161.5 149.7 146.1 138.2 129.7 102.9 108.2 98.6 86.8 57.3 48.1 28.4 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 7 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD July 2007 - Rev 24-Jul-07 Mechanical Drawing 1.000 (0.039) 0.678 (0.027) 2 1 3 4 0.0 0.0 0.678 (0.027) 1.880 (0.074) 2.000 (0.079) 0.309 (0.012) (Note: Engineering designator is 28LN3UA0338) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All Bond Pads are 0.100 x 0.100 (0.004 x 0.004). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.239 mg. Bond Pad #1 (RF In) Bond Pad #2 (RF Out) Bond Pad #3 (Vd) Bond Pad #4 (Vd) Bias Arrangement Bypass Capacitors - See App Note [2] RF In 2 RF Out 1 L1000 RF In 4 XL1000-BD RF Out 3 Vd Vd Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 7 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD July 2007 - Rev 24-Jul-07 App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain bias. Bias is nominally Vd=3V, I=35mA or Vd=5V, I=50mA. App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF Tables These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Backplate Temperature Channel Temperature Rth MTTF Hours FITs 55 deg Celsius 72.2 deg Celsius 164.0° C/W 2.52E+11 3.96E-03 75 deg Celsius 93.6 deg Celsius 176.7° C/W 1.53E+10 6.52E-02 95 deg Celsius 114.7 deg Celsius 188.0° C/W 1.29E+09 7.76E-01 Bias Conditions: Vd=3.0V and Id=35.0 mA Backplate Temperature Channel Temperature Rth MTTF Hours FITs 55 deg Celsius 98.9 deg Celsius 175.8° C/W 8.24E+09 1.21E-01 75 deg Celsius 122.1 deg Celsius 188.4° C/W 5.99E+08 1.67E+00 95 deg Celsius 145.0 deg Celsius 199.9° C/W 6.00E+07 1.67E+01 Bias Conditions: Vd=5.0V and Id=50 mA Device Schematic RFout RFin R=5.0 R=50.0 R=3.3 R=50.0 R=200.0 R=50.0 R=50.0 R=50.0 R=110.0 R=200.0 R=22.2 R=200.0 R=20.0 R=30.0 R=350.0 R=640.0 R=75.0 R=31.8 R=22.2 R=400.0 R=21.0 R=5.0 R=5.0 Vd1 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 7 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD July 2007 - Rev 24-Jul-07 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided). The work station temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Ordering Information Part Number for Ordering XL1000-BD-000V XL1000-BD-EV1 Description Where “V” is RoHS compliant die packed in vacuum release gel paks XL1000 die evaluation module Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 7 of 7 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.