DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: ηC = 60% • UHS0-HV technology (fT = 25 GHz) adopted • High reliability through use of gold electrodes • Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5754 50 pcs (Non reel) • 8 mm wide embossed taping 2SC5754-T2 3 kpcs/reel • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10008EJ02V0DS (2nd edition) Date Published March 2003 CP(K) Printed in Japan The mark • shows major revised points. NEC Compound Semiconductor Devices 2001, 2003 2SC5754 ABSOLUTE MAXIMUM RATINGS (TA = +25°°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 13 V Collector to Emitter Voltage VCEO 5.0 V Emitter to Base Voltage VEBO 1.5 V IC 500 mA 735 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB THERMAL RESISTANCE Parameter Junction to Ambient Resistance 2 Symbol Test Conditions Ratings Unit Rth j-a1 Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB 170 °C/W Rth j-a2 Stand alone device in free air 570 °C/W Data Sheet PU10008EJ02V0DS 2SC5754 ELECTRICAL CHARACTERISTICS (TA = +25°°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 1 000 nA Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 mA − − 1 000 nA VCE = 3 V, IC = 100 mA 40 60 100 − VCE = 3 V, IC = 100 mA, f = 0.5 GHz 16 20 − GHz VCE = 3 V, IC = 100 mA, f = 2 GHz 5.0 6.5 − dB VCB = 3 V, IE = 0 mA, f = 1 MHz − 1.0 1.5 pF VCE = 3 V, IC = 100 mA, f = 2 GHz − 12.0 − dB GL VCE = 3.6 V, ICq = 20 mA, f = 1.8 GHz, Pin = 0 dBm, 1/2 Duty − 12.0 − dB PO (1 dB) VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty − 26.0 − dBm ηC VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz, Pin = 15 dBm, 1/2 Duty − 60 − % hFE DC Current Gain Note 1 RF Characteristics Gain Bandwidth Product fT S21e 2 Insertion Power Gain Reverse Transfer Capacitance Maximum Available Power Gain Linear Gain Gain 1 dB Compression Output Power Collector Efficiency Cre Note 2 MAG Note 3 Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MAG = S21 (K – √ (K2 – 1) ) S12 hFE CLASSIFICATION Rank FB Marking R57 hFE Value 40 to 100 Data Sheet PU10008EJ02V0DS 3 2SC5754 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 1 000 Mounted on Polyimide PCB 800 (38 × 38 mm, t = 0.4 mm) 735 600 400 Stand alone device in free air 205 200 0 25 1 000 50 75 100 125 2.0 f = 1 MHz 1.5 1.0 0.5 0 150 1 3 4 5 Ambient Temperature TA (˚C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 450 VCE = 3 V IB : 0.5 mA step 400 100 Collector Current IC (mA) Collector Current IC (mA) 2 10 1 0.1 0.01 7 mA 350 6 mA 300 5 mA 250 4 mA 200 3 mA 150 2 mA 100 1 mA 50 0.001 0.5 0.6 0.7 0.8 0.9 1.0 0 Base to Emitter Voltage VBE (V) 1 000 DC Current Gain hFE VCE = 3 V 100 1 10 100 1 000 Collector Current IC (mA) 4 2 3 4 IB = 0.5 mA 5 6 Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 10 1 Data Sheet PU10008EJ02V0DS 2SC5754 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 3 V f = 0.5 GHz 20 15 10 5 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 0 1 10 100 1 000 35 30 VCE = 3 V IC = 100 mA MSG MAG 25 20 15 10 5 |S21e|2 0 0.1 1 10 Collector Current IC (mA) Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 VCE = 3 V f = 1 GHz MSG MAG 15 |S21e|2 10 5 0 1 10 100 1 000 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Gain Bandwidth Product fT (GHz) 25 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Collector Current IC (mA) 20 VCE = 3 V f = 2 GHz 15 MSG MAG 10 |S21e|2 5 0 1 10 100 1 000 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 VCE = 3 V f = 2.5 GHz 15 10 MSG MAG 5 |S21e|2 0 1 10 100 1 000 Collector Current IC (mA) Data Sheet PU10008EJ02V0DS 5 150 10 100 5 50 0 –15 ηC –10 –5 0 5 0 15 10 Output Power Pout (dBm), Power Gain GP (dB) Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 300 VCE = 3.2 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty 250 Pout 20 200 IC 15 150 GP 100 10 50 5 ηC 0 –10 –5 0 5 10 0 20 15 Output Power Pout (dBm), Power Gain GP (dB) Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 300 VCE = 3.6 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty 250 Pout 20 200 IC 15 150 GP 100 10 50 5 ηC 0 –10 –5 0 5 10 Input Power Pin (dBm) 15 0 20 25 250 Pout 20 200 IC 15 150 GP 10 100 50 5 ηC 0 –5 0 5 10 15 0 25 20 Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 300 VCE = 3.2 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty 250 Pout 20 200 IC 15 150 GP 100 10 50 5 ηC 0 –10 –5 0 5 10 0 20 15 Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 300 VCE = 3.6 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty 250 Pout 20 200 IC 15 150 GP 100 10 50 5 ηC 0 –10 Remark The graphs indicate nominal characteristics. 6 300 VCE = 3.2 V, f = 2.4 GHz ICq = 20 mA, 1/2 Duty Data Sheet PU10008EJ02V0DS –5 0 5 10 Input Power Pin (dBm) 15 0 20 Collector Current IC (mA), Collector Efficiency η C (%) 15 30 Collector Current IC (mA), Collector Efficiency η C (%) 200 GP OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER Collector Current IC (mA), Collector Efficiency η C (%) 20 Output Power Pout (dBm), Power Gain GP (dB) IC Output Power Pout (dBm), Power Gain GP (dB) 250 Pout Output Power Pout (dBm), Power Gain GP (dB) 25 300 VCE = 3.2 V, f = 0.9 GHz ICq = 20 mA, 1/2 Duty Collector Current IC (mA), Collector Efficiency η C (%) 30 Collector Current IC (mA), Collector Efficiency η C (%) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER Collector Current IC (mA), Collector Efficiency η C (%) Output Power Pout (dBm), Power Gain GP (dB) 2SC5754 2SC5754 POWER SUPPLY IMPEDANCE, LOAD IMPEDANCE (Recommended value) Frequency f (GHz) Collector to Emitter Voltage VCE (V) Supply Impedance ZS (Ω) Load Impedance ZL (Ω) 0.9 2.8 to 3.6 8.4 − 5.2 j 15.1 − 4.3 j 1.8 2.8 to 3.6 6.3 − 16.4 j 15.8 − 6.9 j 2.4 2.8 to 3.6 5.9 − 22.1 j 15.2 − 17.9 j ZL ZS RF input line ZS GND B E E C GND RF output line Tr. ZL f = 0.9 GHz f = 1.8 GHz ZL ZL ZS ZS f = 2.4 GHz ZL ZS Data Sheet PU10008EJ02V0DS 7 2SC5754 APPLICATION EXAMPLE (Low-cost PA solution) Bluetooth Power Class 1 f = 2.4 GHz R57 T80 0 dBm 13 dBm 2SC5509 22 dBm 2SC5754 SS Cordless Phone f = 2.4 GHz R57 20 dBm 26 dBm 2SC5754 DCS1800 (GSM1800) Cellular Phone f = 1.8 GHz A R55 5 dBm R57 16 dBm 2SC5753 1 00 9Z 25 dBm 2SC5754 35 dBm NE5520379A (MOS FET) Cordless Phone f = 0.9 GHz R57 TH –3 dBm 9 dBm 2SC5434 (3-pin TUSMM) 8 3 25 dBm 2SC5754 Data Sheet PU10008EJ02V0DS 2SC5754 EVALUATION CIRCUIT EXAMPLE : 1.8 GHz PA EVALUATION BOARD PCB Pattern and Element Layout VC VB C2 C4 RF in SL4 C3 C1 C5 SL1 SL2 RF out C6 SL3 SL5 Remarks 1. 38 × 38 mm, t = 0.4 mm, εr = 4.55 double-sided Tr. (2SC5754) copper-clad polyimide board 2. Back side : GND pattern 3. Solder plating on pattern 4. : Through holes Equivalent Circuit VB VC C2 C4 SL3 SL4 SL5 C6 RF out SL1 SL2 C1 RF in C5 Tr. C3 Parts List Parts Value Size Classification C1, C6 18 pF Multiplayer ceramic chip capacitor C2 3 300 pF Multiplayer ceramic chip capacitor C3 3 pF Multiplayer ceramic chip capacitor C4 15 pF Multiplayer ceramic chip capacitor C5 1.5 pF Multiplayer ceramic chip capacitor SL1, SL4 w = 0.20 mm Strip line SL2 w = 0.76 mm, l = 2.5 mm Strip line SL3 w = 0.76 mm, l = 5 mm Strip line SL5 w = 0.76 mm, l = 1.5 mm Strip line Data Sheet PU10008EJ02V0DS 9 2SC5754 200 IC 15 150 100 GP 10 50 5 ηC 0 –10 –5 0 5 10 0 20 15 Input Power Pin (dBm) Output Power Pout (dBm), Power Gain GP (dB) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 300 VCE = 3.6 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty 250 Pout 20 200 IC 15 10 150 GP 100 50 5 ηC 0 –10 –5 0 5 10 15 0 20 Input Power Pin (dBm) 30 25 300 VCE = 3.2 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty 250 Pout 20 200 IC 15 150 GP 100 10 50 5 ηC 0 –10 –5 0 5 10 0 20 15 Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 30 25 300 VCE = 3.6 V, f = 1.8 GHz ICq = 20 mA, 1/2 Duty 250 Pout 20 15 IC 200 150 GP 10 100 5 50 ηC 0 –10 –5 0 5 10 15 0 20 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.csd-nec.com/ 10 Data Sheet PU10008EJ02V0DS Collector Current IC (mA), Collector Efficiency η C (%) Pout 20 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER Collector Current IC (mA), Collector Efficiency η C (%) 250 Output Power Pout (dBm), Power Gain GP (dB) 25 300 VCE = 3.2 V, f = 1.8 GHz ICq = 4 mA, 1/2 Duty Output Power Pout (dBm), Power Gain GP (dB) 30 Collector Current IC (mA), Collector Efficiency η C (%) Output Power Pout (dBm), Power Gain GP (dB) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER Collector Current IC (mA), Collector Efficiency η C (%) EXAMPLE OF CHARACTERISTICS FOR 1.8 GHz PA EVALUATION BOARD 2SC5754 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) 0.65 0.65 1.30 3 4 1 0.30 0.30+0.1 –0.05 +0.1 –0.05 0.60 0.65 0.11+0.1 –0.05 0.59 ± 0.05 1.25 R57 2.0 ± 0.1 2 1.25 ± 0.1 0.30+0.1 –0.05 0.40+0.1 –0.05 2.05 ± 0.1 PIN CONNECTIONS 1. 2. 3. 4. Emitter Collector Emitter Base Data Sheet PU10008EJ02V0DS 11 2SC5754 • The information in this document is current as of March, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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