TENTATIVE SBD MODULE 30A/150V P2H30QH15 OUTLINE DRAWING FEATURES * Compatible with Isolated Base SOT227 * Dual Separated Diodes * Extremely Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability See the Next Page TYPICAL APPLICATIONS * High Frequency Rectification Maximum Ratings Approx Net Weight:35g Parameter Symbol Repetitive Peak Reverse Voltage *1 Non Repetitive Peak Reverse Voltage *1 VRRM VRSM Parameter Type / Grade P2H30QH15 150 - Conditions Average Rectified Output Current *1 IO(AV) Surge Forward Current *1 IFSM Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Terminals Mounting torque Case mounting Tjw Tstg Viso Ftor Unit - V Max Rated Value Unit 30 A 300 A 50Hz Half Sine Wave condition Tc=To Be Determined 50 Hz Half Sine Wave,1Pulse Non-repetitive -40 to +150 °C -40 to +125 °C Base Plate to Terminals, AC1min 2500 V M4Screw 1.5(1.4) N •m M4Screw 1.5(1.4) with Thermal Compound Electrical • Thermal Characteristics Characteristics Peak Reverse Current *1 Peak Forward Voltage *1 Thermal Resistance *1 *1: Value Per 1Arm Symbol Test Conditions IRM VRM= VRRM, Tj= 25°C VFM IFM= 30A, Tj=25°C Rth(j-c) Junction to Case Base Plate to Heat Sink with Thermal Rth(c-f) Compound Max. Unit 20 1.05 TBD 0.3 µA V °C/W P2H30QH15 OUTLINE DRAWING (Dimensions in mm) 3 1 4 2