TCS1200 1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The TCS1200 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for TCAS applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 2095 Device Dissipation @ 25°C1 Maximum Voltage and Current Collector to Base Voltage (BVces) 65 3.5 Emitter to Base Voltage (BVebo) Collector Current (Ic) 60 Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 W V V A °C °C ELECTRICAL CHARACTERISTICS @ 25°°C SYMBOL CHARACTERISTICS Pout Pg ηc Power Out Power Gain Collector Efficiency RL Return Loss Tr Rise Time Pd Pulse Droop VSWR TEST CONDITIONS MIN Pulse Width = 32µs Duty Factor = 2% F = 1030 MHz, Vcc = 53 Volts Pin = 115 Watts 1200 10.2 45 W dB % -10 dB 1 Load Mismatch Tolerance TYP MAX UNITS 100 ns 0.7 dB 3.0:1 FUNCTIONAL CHARACTERISTICS @ 25°°C BVebo BVces hFE θjc1 NOTES: Emitter to Base Breakdown Collector to Emitter Breakdown DC – Current Gain Thermal Resistance Ie = 40 mA Ic = 100 mA Vce = 5V, Ic = 5A 3.5 65 20 V V 0.02 °C/W 1. At rated output power and pulse conditions Preliminary – May 2007 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. TCS1200 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.