LM113/LM313 Reference Diode General Description The LM113/LM313 are temperature compensated, low voltage reference diodes. They feature extremely-tight regulation over a wide range of operating currents in addition to an unusually-low breakdown voltage and good temperature stability. The diodes are synthesized using transistors and resistors in a monolithic integrated circuit. As such, they have the same low noise and long term stability as modern IC op amps. Further, output voltage of the reference depends only on highly-predictable properties of components in the IC; so they can be manufactured and supplied to tight tolerances. Dynamic impedance of 0.3X from 500 mA to 20 mA Temperature stability typically 1% overb55§ C to 125§ C range (LM113), 0§ C to 70§ C (LM313) Y Tight tolerance: g 5%, g 2% or g 1% The characteristics of this reference recommend it for use in bias-regulation circuitry, in low-voltage power supplies or in battery powered equipment. The fact that the breakdown voltage is equal to a physical property of siliconÐthe energy-band gap voltageÐmakes it useful for many temperature-compensation and temperature-measurement functions. Y Y Features Y Low breakdown voltage: 1.220V Schematic and Connection Diagrams Metal Can Package Order Number LM113H, LM113H/883, LM113-1H, LM113-1H/883, LM113-2H, LM113-2H/883, or LM313H See NS Package Number H02A TL/H/5713 – 1 Typical Applications Low Voltage Regulator Level Detector for Photodiode ² Solid tantalum. TL/H/5713 – 2 C1995 National Semiconductor Corporation TL/H/5713 RRD-B30M115/Printed in U. S. A. LM113/LM313 Reference Diode December 1994 Absolute Maximum Ratings Storage Temperature Range If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. (Note 3) Power Dissipation (Note 1) 100 mW Reverse Current 50 mA Forward Current 50 mA b 65§ C to a 150§ C Lead Temperature (Soldering, 10 seconds) 300§ C Operating Temperature Range LM113 LM313 b 55§ C to a 125§ C 0§ C to a 70§ C Electrical Characteristics (Note 2) Parameter Conditions Min Typ Max Units 1.160 1.210 1.195 1.220 1.22 1.22 1.280 1.232 1.245 V V V 0.5 mA s IR s 20 mA 6.0 15 mV Reverse Dynamic Impedance IR e 1 mA IR e 10 mA 0.2 0.25 1.0 0.8 X X Forward Voltage Drop IF e 1.0 mA 0.67 1.0 V RMS Noise Voltage 10 Hz s f s 10 kHz IR e 1 mA Reverse Breakdown Voltage Change with Current 0.5 mA s IR s 10 mA TMIN s TA s TMAX Breakdown Voltage Temperature Coefficient 1.0 mA s IR s 10 mA TMIN s TA s TMAX Reverse Breakdown Voltage LM113/LM313 LM113-1 LM113-2 IR e 1 mA Reverse Breakdown Voltage Change 5 mV 15 0.01 mV %/§ C Note 1: For operating at elevated temperatures, the device must be derated based on a 150§ C maximum junction and a thermal resistance of 80§ C/W junction to case or 440§ C/W junction to ambient. Note 2: These specifications apply for TA e 25§ C, unless stated otherwise. At high currents, breakdown voltage should be measured with lead lengths less than (/4 inch. Kelvin contact sockets are also recommended. The diode should not be operated with shunt capacitances between 200 pF and 0.1 mF, unless isolated by at least a 100X resistor, as it may oscillate at some currents. Note 3: Refer to the following RETS drawings for military specifications: RETS113-1X for LM113-1, RETS113-2X for LM113-2 or RETS113X for LM113. Typical Performance Characteristics Temperature Drift Reverse Dynamic Impedance Reverse Characteristics TL/H/5713 – 3 2 Typical Performance Characteristics (Continued) Reverse Characteristics Forward Characteristics Reverse Dynamic Impedance Noise Voltage Response Time Maximum Shunt Capacitance TL/H/5713 – 4 Typical Applications (Continued) Amplifier Biasing for Constant Gain with Temperature Constant Current Source Thermometer *Adjust for 0V at 0§ C ² Adjust for 100 mV/§ C TL/H/5713 – 5 3 LM113/LM313 Reference Diode Physical Dimensions inches (millimeters) Order Number LM113H, LM113H/883, LM113-1H, LM113-1H/883, LM113-2H, LM113-2H/883 or LM313H NS Package Number H02A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. 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