GMT G2997B

G2997B
Global Mixed-mode Technology
DDR Termination Regulator
Features
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General Description
Support DDR I (1.25VTT), DDR II (0.9 VTT),
DDR III (0.75 VTT), and DDR IIIL (0.675VTT)
Requirements
Input Voltage Range: 3V to 5.5V
VLDOIN Voltage Range: 1.2V to 3.6V
Requires Only 20µF Ceramic Output Capacitance
Supports High-Z in S3 and Soft-Off in S5
Integrated Divider Tracks 1/2 VDDQSNS for
Both VTT and VTTREF
Remote Sensing (VTTSNS)
±20mV Accuracy for VTT and VTTREF
10mA Buffered Reference (VTTREF)
Built-In Soft-Start
Over Current Protection
Thermal Shutdown Protection
MSOP-10 & MSOP-10 (FD) Package
The G2997B is a 2A sink/source tracking termination
regulator. It is specifically designed for low-cost/
low-external component count systems. The G2997B
maintains a high speed operational amplifier that provides fast load transient response and only requires
20µF (2x10µF) of ceramic output capacitance. The
G2997B supports remote sensing functions and all
features required to power the DDR I / DDR II /DDRIII
/DDR IIIL VTT bus termination according to the
JEDEC specification. In addition, the G2997B includes
integrated sleep-state controls placing VTT in High-Z
in S3 (suspend to RAM) and soft-off for VTT and
VTTREF in S5 (Shutdown). The G2997B is available
in MSOP-10 and MSOP-10 (FD).
Ordering Information
ORDER
NUMBER
MARKING
TEMP.
RANGE
PACKAGE
(Green)
G2997BP71U
G2997BF61U
G2997
G2997B
-40°C~85°C
-40°C~85°C
MSOP-10
MSOP-10 (FD)
Applications
DDR I/II/III/IIIL Memory Termination
SSTL−2, SSTL−18
„ HSTL Termination
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Note: P7: MSOP-10 F6: MSOP-10 (FD)
1: Bonding Code
U: Tape & Reel
Pin Configuration
G2997B
G2997B
VDDQSNS
1
10
VIN
VLDOIN
2
9
S5
VTT
3
8
GND
PGND
4
7
S3
VTTSNS
5
6
VTTREF
DDR II
VDDQSNS
1
10
VIN
VLDOIN
2
9
S5
VTT
3
8
GND
PGND
4
7
S3
VTTSNS
5
6
VTTREF
Thermal
Pad
1.8V
VDDQSNS
VIN
DDR II
VLDOIN
S5
VTT
GND
PGND
S3
RS5
10kΩ
RS3
S5
S3
10kΩ
C1
2x10µF
VTTSNS
VTTREF
C2
0.1µF
Top View
MSOP-10 (FD)
MSOP-10
VIN=5V
Note: Recommend connecting the Thermal Pad to
the GND for excellent power dissipation.
Typical Application Circuit
DDR III*
DDR I
2.5V
VDDQSNS
VLDOIN
VTT
PGND
C1
2x10µF
VIN
S5
GND
S3
RS5
10kΩ
RS3
1.5V
VIN=5V
DDR II
VLDOIN
S5
VTT
PGND
S3
10kΩ
VTTSNS
VDDQSNS
C1
2x10µF
VTTREF
VIN
S5
GND
S3
RS5
10kΩ
RS3
VIN=3.3V
S5
S3
10kΩ
VTTSNS
C2
0.1µF
VTTREF
C2
0.1µF
* Recommended VIN =3.3V
TEL: 886-3-5788833
http://www.gmt.com.tw
Ver: 0.8
Nov 22, 2011
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