GXELECTRONICS BZX55C4V3

BZX55C
Silicon Planar Zener Diodes
The Zener voltages are graded according to the
international E24 standard. Other tolerances and
higher Zener voltages are upon request.
Max. 0.5
Min. 27.5
Max. 1.9
Black
Cathode Band
Black
Part No.
XXX
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Power Dissipation
Ptot
Junction Temperature
Storage Temperature Range
1)
Symbol
Value
Unit
1)
mW
500
Tj
175
O
C
Tstg
- 55 to + 175
O
C
Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
Characteristics at Ta = 25 OC
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 100 mA
1)
Symbol
RthA
Max.
0.3
VF
Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
1
1)
Unit
K/mW
V
BZX55C
Zener Voltage Range
Type
BZX55C0V8
2)
1)
Dynamic Resistance
Reverse Leakage Current
Vznom
VZT
at IZT
ZZT
ZZK
at IZK
Ta =25OC
Ta =125OC
IR at VR
Temp. Coefficient
of Zener Voltage
(V)
(V)
(mA)
Max. (Ω)
Max. (Ω)
(mA)
Max. (µA)
Max. (µA)
(V)
TKvz (%/K)
0.8
0.73...0.83
5
8
50
1
-
-
-
-0.26...-0.23
BZX55C2V0
2
1.8...2.15
5
85
600
1
100
200
1
-0.09...-0.06
BZX55C2V2
2.2
2.08...2.33
5
85
600
1
75
160
1
-0.09...-0.06
BZX55C2V4
2.4
2.28...2.56
5
85
600
1
50
100
1
-0.09...-0.06
BZX55C2V7
2.7
2.5...2.9
5
85
600
1
10
50
1
-0.09...-0.06
BZX55C3V0
3
2.8...3.2
5
85
600
1
4
40
1
-0.08...-0.05
BZX55C3V3
3.3
3.1...3.5
5
85
600
1
2
40
1
-0.08...-0.05
BZX55C3V6
3.6
3.4...3.8
5
85
600
1
2
40
1
-0.08...-0.05
BZX55C3V9
3.9
3.7...4.1
5
85
600
1
2
40
1
-0.08...-0.05
BZX55C4V3
4.3
4...4.6
5
75
600
1
1
20
1
-0.06...-0.03
BZX55C4V7
4.7
4.4...5
5
60
600
1
0.5
10
1
-0.05...+0.02
BZX55C5V1
5.1
4.8...5.4
5
35
550
1
0.1
2
1
-0.02...+0.02
BZX55C5V6
5.6
5.2...6
5
25
450
1
0.1
2
1
-0.05...+0.05
BZX55C6V2
6.2
5.8...6.6
5
10
200
1
0.1
2
2
0.03...0.06
BZX55C6V8
6.8
6.4...7.2
5
8
150
1
0.1
2
3
0.03...0.07
BZX55C7V5
7.5
7...7.9
5
7
50
1
0.1
2
5
0.03...0.07
BZX55C8V2
8.2
7.7...8.7
5
7
50
1
0.1
2
6.2
0.03...0.08
BZX55C9V1
9.1
8.5...9.6
5
10
50
1
0.1
2
6.8
0.03...0.09
BZX55C10
10
9.4...10.6
5
15
70
1
0.1
2
7.5
0.03...0.1
BZX55C11
11
10.4...11.6
5
20
70
1
0.1
2
8.2
0.03...0.11
BZX55C12
12
11.4...12.7
5
20
90
1
0.1
2
9.1
0.03...0.11
BZX55C13
13
12.4...14.1
5
26
110
1
0.1
2
10
0.03...0.11
BZX55C15
15
13.8...15.6
5
30
110
1
0.1
2
11
0.03...0.11
BZX55C16
16
15.3...17.1
5
40
170
1
0.1
2
12
0.03...0.11
BZX55C18
18
16.8...19.1
5
50
170
1
0.1
2
13
0.03...0.11
BZX55C20
20
18.8...21.2
5
55
220
1
0.1
2
15
0.03...0.11
BZX55C22
22
20.8...23.3
5
55
220
1
0.1
2
16
0.04...0.12
BZX55C24
24
22.8...25.6
5
80
220
1
0.1
2
18
0.04...0.12
BZX55C27
27
25.1...28.9
5
80
220
1
0.1
2
20
0.04...0.12
BZX55C30
30
28...32
5
80
220
1
0.1
2
22
0.04...0.12
BZX55C33
33
31...35
5
80
220
1
0.1
2
24
0.04...0.12
BZX55C36
36
34...38
5
80
220
1
0.1
2
27
0.04...0.12
BZX55C39
39
37...41
2.5
90
500
0.5
0.1
5
30
0.04...0.12
BZX55C43
43
40...46
2.5
90
500
0.5
0.1
5
33
0.04...0.12
BZX55C47
47
44...50
2.5
110
600
0.5
0.1
5
36
0.04...0.12
BZX55C51
51
48...54
2.5
125
700
0.5
0.1
10
39
0.04...0.12
BZX55C56
56
52...60
2.5
135
700
0.5
0.1
10
43
0.04...0.12
BZX55C62
62
58...66
2.5
150
1000
0.5
0.1
10
47
0.04...0.12
BZX55C68
68
64...72
2.5
200
1000
0.5
0.1
10
51
0.04...0.12
BZX55C75
75
70...79
2.5
250
1000
0.5
0.1
10
56
0.04...0.12
1)
Tested with pulses tp = 20 ms.
2)
The BZX55C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode
lead to the negative pole.
BZX55C