SR820 THRU SR8200(SINGLE CHIP) 星合电子 ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 8.0Amperes FEATURES TO-263 D2PAK Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Guard ring for overvoltage protection Low power loss ,high efficiency High current capability ,Low forward voltage drop 0.420(10.67) 0.380(9.65) Single rectifier construction 0.190(4.83) 0.160(4.06) High surge capability 0.245(6.22) MIN For use in low voltage ,high frequency inverters, 0.055(1.40) 0.045(1.14) free wheeling ,and polarity protection applications 0.066(1.68) 0.036(0.92) High temperature soldering guaranteed:260 C/10 seconds, 0.360(9.14) 0.25"(6.35mm)from case 0.639(16.22) 0.560(14.22) 0.320(8.13) 1 K 2 0.053(1.34) 0.047(1.20) MECHANICAL DATA 0.131(3.32) 0.090(2.29) 0.095(2.41) 0.037(0.94) 0.027(0.69) 0.083(2.10) Case: JEDEC TO-263 molded plastic body 0.018(0.46) 0.134(3.40) 0.014(0.35) 0.105(2.67) Terminals: Solderable per MIL-STD-202,method 208 Polarity: As marked Dimensions in inches and (millimeters) Mounting Position: Any Weight: 0.08ounce, 2.24 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive load. For capacitive load,derate by 20%.) Symbols SR 880 SR 8100 SR 8150 60 80 100 150 200 42 56 70 105 140 60 80 100 150 200 SR 820 SR 830 SR 840 SR 850 SR 860 20 30 40 50 14 21 28 35 20 30 40 50 SR 8200 Units Maximum DC blocking voltage VRRM VRMS VDC Maximum average forward rectified current (see Fig.1) I(AV) 8.0 Amps Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 150.0 Amps Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum instantaneous forward voltage at 8.0 A(Notes 1 ) Maximum instantaneous reverse current at rated DC blocking voltage(Notes 1) T A =25 C T A =125 C VF R Operating junction temperature range TJ TSTG Notes: 1.Pulse test: 300 0.85 0.75 0.2 IR Typical thermal resistance (Notes 2) Storage temperature range 0.60 15 50 2.5 JC -65 to+125 0.90 0.95 Volts Volts Volts Volts mA C/W -65 to+150 -65 to+150 s pulse width,1% duty cycle 2.Thermal resistance from junction to case 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７ C C SR820 THRU SR8200(SINGLE CHIP) 星合电子 ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 8.0Amperes FIG.2-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 40 10 INSTANTANEOUS FORWARD CURRENT( AMPERES) AVERAGE FORWARD CURRENT AMPERES FIG.1-FORWARD CURRENT DERATING CURVE 8.0 6.0 4.0 SINGLE PHASE HALF WAVE 50Hz 2.0 INDUCTIVE OR RESISTIVE LOAD 0 0 50 100 150 LEAD TEMPERATURE ( C) FIG.4-TYPICAL JUNCTION CAPACITANCE SR820-SR840 10 SR850-SR8200 1.0 TJ=25 C PULSE WIDTH=300 S 1% DUTY CYCLE 0.1 4000 0.2 CAPACITANCE(pF) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 SR850-SR8200 2000 INSTANTANEOUS FORWARD VOLTAGE (VOLTS) SR820-SR840 1000 FIG.3-TYPICAL REVERSE CHARACTERISTICS 10 200 TC=150 C 100 0.1 0.4 1.0 10 40 60 100 INSTANTANEOUS REVERSE CURRENT (mA) REVERSE VOLTAGE (VOLTS) FIG.5-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT(AMPERES) 150 145 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 140 135 TC=125 C 1.0 TC=75 C 0.1 TC=25 C 0.01 130 SR820-SR840 SR850-SR8200 125 1.0 2.0 5.0 10 20 50 0.001 100 20 40 60 80 100 120 140 NUMBER OF CYCLES AT 60Hz PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７