IS4100 FEATURES * Current transfer ratio ( CTR : MIN. 50% at IF = 5mA, VCE = 5V ) * Isolation voltage between input and output ( Viso = 3KVrms ) * Compact dual-in-line package 4 channels type * Employs double transfer mold technology * ROHS compliance * G : Halogen Free APPLICATIONS * Hybrid substrates that require high density mounting. * Programmable controllers * System appliances, measuring instruments Part No. IS4100 Page : 1 of 10 IS4100 OUTLINE DIMENSIONS *1. 3-digit date code. *2. Rank shall be or shall not be marked. Part No. : IS4100 Page : 2 of 10 IS4100 TAPING DIMENSIONS Quantities per Reel : Package Type Quantities (pcs) Part No. : IS4100 2000 Page : 3 of 10 IS4100 ABSOLUTE MAXIMUM RATING ( Ta = 25°C ) PARAMETER INPUT RATING SYMBOL 217 227 UNIT 247 Forward Current IF 50 mA Reverse Voltage VR 6 V Power Dissipation P 70 mW Collector - Emitter Voltage VCEO 80 V Emitter - Collector Voltage VECO 7 V Collector Current IC 50 mA Collector Power Dissipation PC 150 100 mW Ptot 200 170 mW OUTPUT Total Power Dissipation *1 Isolation Voltage Viso 3,750 Vrms Operating Temperature Topr -55 ~ +110 °C Storage Temperature Tstg -55 ~ +150 °C Tsol 260 (10s) °C *2 Soldering Temperature *1. AC For 1 Minute, R.H. = 40 ~ 60% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 10 Seconds Part No. : IS4100 Page : 4 of 10 IS4100 ELECTRICAL - OPTICAL CHARACTERISTICS ( Ta = 25°C ) PARAMETER INPUT OUTPUT *1 CTR = CONDITIONS Forward Voltage VF — 1.2 1.4 V IF=20mA Reverse Current IR — — 10 μA VR=4V Terminal Capacitance Ct — 30 250 pF V=0, f=1KHz Collector Dark Current ICEO — — 100 nA VCE=50V, IF=0 Collector-Emitter Breakdown Voltage BVCEO 80 — — V IC=0.1mA IF=0 Emitter-Collector Breakdown Voltage BVECO 7 — — V IE=10μA IF=0 IC 2.5 — 30 mA *1 Current Transfer Ratio CTR 50 — 600 % Collector-Emitter Saturation Voltage VCE(sat) — — 0.4 V IF=2.4mA IC=8mA Isolation Resistance Riso — Ω DC500V 40 ~ 60% R.H. Floating Capacitance Cf — 0.6 1 pF V=0, f=1MHz Response Time (Rise) tr — 3 18 μs Response Time (Fall) tf — 4 18 μs Collector Current TRANSFER CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT 5×1010 1×1011 IF=5mA VCE=5V VCE=2V, IC=2mA RL=100Ω IC × 100% IF Part No. : IS4100 Page : 5 of 10 IS4100 CHARACTERISTICS CURVES Figure 1. Collector Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature 60 140 50 120 Forward Current, IF (mA) Collector Power Dissipation, Pc(mW) 160 LTV-217 LTV-227 100 80 LTV-247 60 40 40 30 20 10 20 0 -25 0 25 50 75 100 0 125 -25 0 25 Ambient Temperature,Ta(℃) Figure 3. Forward Current vs. Forward Voltage -3.2 Forward Voltage Temperature Coeffcient △VF / △Ta (mV/oC) Forward Current, IF ( mA ) 100 30oC 50oC 0oC o 75 C 25oC Ta=100oC 10 1 0.4 0.6 0.8 1.0 1.2 1.4 75 100 1.6 1.8 Figure 4. Forward Voltage Temperature Coefficient vs. Forward Current -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 2.0 0.1 1 10 100 Forward Current, IF (mA) Forward Voltage,VF ( V ) Figure 6. Pulse Forward Current vs. Pulse Forward Voltage Figure 5. Pulse Forward Current vs. Duty Cycle Ratio 1000 10000 Pulse width < = 100 s o Ta= 25 C Pulse Forward Current, IFP ( mA ) Pulse Forward Current IFP(mA) 50 Ambient Temperature,Ta (℃) 1000 100 100 10 Pulse Widths ≦ 10 us Repetitive Frequency = 100Hz Ta = 25 ℃ 1 10 0.0001 0.001 0.01 Duty Ratio Part No. : IS4100 0.1 1 0.5 1 1.5 2 2.5 3 Pulse Forward Voltage, VFP(V ) Page : 6 of 10 IS4100 CHARACTERISTICS CURVES Figure 7. Collector-Emitter Saturation Voltage vs. Forward Current Figure 8. Collector Current vs. Collector-Emitter Voltage 50 5 50mA Collector Currrent, Ic ( mA) 4 3.5 10mA 5mA 7mA 0.5mA 2.5 3mA 3 1mA Collect-Emitt Voltage, VCE (V) 4.5 2 1.5 1 40 30mA 20mA 30 PC(Max)=150mV 20 10mA 10 IF=5mA 0.5 0 0 0 2 4 6 8 10 12 14 16 18 0 20 5 10 Collector-Emitter Voltage, VCE ( V ) Forward Current, IF (mA) Figure 9. Collector Current vs. Small Collector-Emitter Voltage Figure 10. Collector Current vs. Forward Curent 0.1 50 10V 5V 50mA 40 Collector Current, Ic (A) Collector Currrent, Ic ( mA) 45 35 30mA 30 25 20mA 20 10mA 15 10 Vcc = 0.4V 0.01 0.001 5mA 5 IF=2mA 0 0 0.5 1 0.0001 0.0001 Collector-Emitter Voltage, VCE ( V ) 0.001 0.01 0. Forward Current, IF(A) Figure 11. Collector Dark Current vs. Ambient Temperature Figure 12. Current Transfer Ratio vs. Forward Current 1.00E-06 VCE= 48V 1.00E-08 24V 10V 5V 1.00E-10 -25 -5 15 35 55 Ambient Temperature, Ta(OC) Part No. : IS4100 75 95 Current Tranfer Ratio CTR (%) Collector Dark Current, ICEO(A) 1000 10V 5V 100 Vcc=0.4V 10 0.0001 0.001 0.01 0.1 Forward Current, IF (A) Page : 7 of 10 IS4100 CHARACTERISTICS CURVES Figure 13. Collector-Emitter Saturation Voltage vs. Ambient Temperature Figure 14. Collector Current vs. Ambient Temperature Collector Current, IC ( mA ) (V) Collector-Emitter Saturation Voltage 100 0.18 0.16 25mA 0.14 IF=8mA IC=2.4mA 0.12 10 0.10 20mA IF=20mA IC=1mA 0.08 5mA IF=1mA IC=0.2mA 1mA 0.06 1 0.04 IF=0.5mA 0.02 0.00 -30 0.1 5 -25 0 40 75 25 50 Ambinet Temperature, Ta ( C) o 110 75 100 O Ambient Temperature,Ta ( C ) Figure 15. Switching Time vs. Load Resistance Figure 16. Switching Time vs. Ambient Temperature 1000 100 TOFF Tof f TS Switching Time, t(us) Switching Time ( μS ) 100 Ts 10 Ton 1 10 TON 1 T a = 25 ℃ Vcc = 5V RL = 1.9k Ω Vcc=5V IF=16mA RL=1.9kΩ 0.1 0.1 1 10 100 Load Resistance, RL ( KΩ) -20 0 20 40 60 O 80 100 Ambient Temperature Ta( C) Figure 17. Frequency Response 0 RL=100Ω V O ( db ) -2 1KΩ -4 -6 Vcc=5V Ic=2mA Ta=25oC -8 1 Part No. : IS4100 10 Frequency ( kHz ) 100 Page : 8 of 10 IS4100 SWITCHING TIME TEST CIRCUIT TEMPERATURE PROFILE OF SOLDERING REFLOW (1) One time soldering reflow is recommended within the condition of temperature and time profile shown below. Part No. : IS4100 Page : 9 of 10 IS4100 TEMPERATURE PROFILE OF SOLDERING REFLOW (2) When using another soldering method such as infrated ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above (1) Notes: - Isocom is continually improving the quality, reliability, function or design and Isocom reserves the right to make changes without further notices. - The products shown in this publication are designed for the general use in electronic applications such as office automation equipment, communications devices, audio/visual equipment, electrical application and instrumentation. - For equipment/devices where high reliability or safety is required, such as space applications, nuclear power control equipment, medical equipment, etc, please contact our sales representatives. - When requiring a device for any ”specific” application, please contact our sales in advice. - If there are any questions about the contents of this publication, please contact us at your convenience. - The contents described herein are subject to change without prior notice. - Do not immerse unit’s body in solder paste. 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